A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate and cobalt local interconnects

Author(s):  
C. Auth ◽  
A. Aliyarukunju ◽  
M. Asoro ◽  
D. Bergstrom ◽  
V. Bhagwat ◽  
...  
Author(s):  
GOPALA KRISHNA.M ◽  
UMA SANKAR.CH ◽  
NEELIMA. S ◽  
KOTESWARA RAO.P

In this paper, presents circuit design of a low-power delay buffer. The proposed delay buffer uses several new techniques to reduce its power consumption. Since delay buffers are accessed sequentially, it adopts a ring-counter addressing scheme. In the ring counter, double-edge-triggered (DET) flip-flops are utilized to reduce the operating frequency by half and the C-element gated-clock strategy is proposed. Both total transistor count and the number of clocked transistors are significantly reduced to improve power consumption and speed in the flip-flop. The number of transistors is reduced by 56%-60% and the Area-Speed-Power product is reduced by 56%-63% compared to other double edge triggered flip-flops. This design is suitable for high-speed, low-power CMOS VLSI design applications.


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