The effect of STI and active length on dual gate oxide reliability

2008 ◽  
Author(s):  
Ng Hong Seng
Keyword(s):  
Gate Oxide ◽  
Active Length ◽  
Oxide Reliability ◽  
Dual Gate

Impact of boron penetration on gate oxide reliability and device performance in a dual-gate oxide process

2000 ◽  
Author(s):  
Yunqiang Zhang ◽  
Chock H. Gan ◽  
Xi Li ◽  
James Lee ◽  
David Vigar ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Device Performance ◽  
Oxide Reliability ◽  
Dual Gate ◽  
Boron Penetration

Dual Gate oxide reliability improved by Spacer and Salicide process optimisation

2008 ◽  
Author(s):  
G. Richou ◽  
D. Ottenwaelder ◽  
J.L. Baltzinger ◽  
B. Delahaye ◽  
F. Domart ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Process Optimisation ◽  
Oxide Reliability ◽  
Dual Gate

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus
Keyword(s):  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Power Mosfets ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

The impact of F contamination induced by the process on the gate oxide reliability

1998 ◽  
Vol 38 (2) ◽  
pp. 255-258 ◽  
Author(s):  
G Ghidini ◽  
C Clementi ◽  
D Drera ◽  
F Maugain
Keyword(s):  
Gate Oxide ◽  
Oxide Reliability ◽  
The Impact

Impacts of Area-Dependent Defects on the Yield and Gate Oxide Reliability of SiC Power MOSFETs

2021 ◽  
Author(s):  
Tianshi Liu ◽  
Shengnan Zhu ◽  
Michael Jin ◽  
Limeng Shi ◽  
Marvin H. White ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Power Mosfets ◽  
Oxide Reliability
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