Critical Dimension of Word2Vec

2019 ◽  
Author(s):  
Shuvayanti Das ◽  
Sohan Ghosh ◽  
Shubham Bhattacharya ◽  
Rajat Varma ◽  
Dinabandhu Bhandari
Keyword(s):  
Critical Dimension

Information capacity and bandwidth limitations in the SEM

1989 ◽  
Vol 47 ◽  
pp. 84-85
Author(s):  
D. C. Joy ◽  
R. D. Bunn
Keyword(s):  
Signal To Noise Ratio ◽  
Critical Dimension ◽  
Information Capacity ◽  
Acquisition Time ◽  
Signal To Noise ◽  
Sem Image ◽  
Probe Size ◽  
Minimum Number ◽  
Noise Ratio ◽  
Signal Channel

The information available from an SEM image is limited both by the inherent signal to noise ratio that characterizes the image and as a result of the transformations that it may undergo as it is passed through the amplifying circuits of the instrument. In applications such as Critical Dimension Metrology it is necessary to be able to quantify these limitations in order to be able to assess the likely precision of any measurement made with the microscope.The information capacity of an SEM signal, defined as the minimum number of bits needed to encode the output signal, depends on the signal to noise ratio of the image - which in turn depends on the probe size and source brightness and acquisition time per pixel - and on the efficiency of the specimen in producing the signal that is being observed. A detailed analysis of the secondary electron case shows that the information capacity C (bits/pixel) of the SEM signal channel could be written as :

Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

2016 ◽  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrostatic Potential ◽  
Critical Dimension ◽  
Data Retention ◽  
Signal Line ◽  
Adjacent Node ◽  
Storage Node ◽  
Retention Characteristics ◽  
Node Voltage ◽  
The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension

2018 ◽  
Vol 47 (5) ◽  
pp. 44-50
Author(s):  
A. Myakonkikh ◽  
◽  
K. Kuvaev ◽  
A. Tatarintsev ◽  
N. Orlikovskii ◽  
...  
Keyword(s):  
Critical Dimension

Spectroscopic ellipsometric scatterometry: sources of errors in critical dimension control

2003 ◽  
Author(s):  
Jerome Hazart ◽  
Gilles Grand ◽  
Philippe Thony ◽  
David Herisson ◽  
Stephanie Garcia ◽  
...  
Keyword(s):  
Critical Dimension ◽  
Dimension Control

scholarly journals Topological excitations in statistical field theory at the upper critical dimension

2021 ◽  
Vol 2021 (3) ◽  
Author(s):  
Marco Panero ◽  
Antonio Smecca
Keyword(s):  
Field Theory ◽  
Monte Carlo Study ◽  
Critical Dimension ◽  
Density Profiles ◽  
Upper Critical Dimension ◽  
Four Dimensions ◽  
Topological Excitations ◽  
Classical Heisenberg Model ◽  
Statistical Field ◽  
Statistical Field Theory

Abstract We present a high-precision Monte Carlo study of the classical Heisenberg model in four dimensions. We investigate the properties of monopole-like topological excitations that are enforced in the broken-symmetry phase by imposing suitable boundary conditions. We show that the corresponding magnetization and energy-density profiles are accurately predicted by previous analytical calculations derived in quantum field theory, while the scaling of the low-energy parameters of this description questions an interpretation in terms of particle excitations. We discuss the relevance of these findings and their possible experimental applications in condensed-matter physics.

scholarly journals Effect of Twist Drill Geometry and Drilling Parameters on Hole Quality in Single-Shot Drilling of CFRP/Al7075-T6 Composite Stack

2021 ◽  
Vol 5 (7) ◽  
pp. 189
Author(s):  
Muhammad Hafiz Hassan ◽  
Jamaluddin Abdullah ◽  
Gérald Franz ◽  
Chim Yi Shen ◽  
Reza Mahmoodian
Keyword(s):  
Feed Rate ◽  
Thrust Force ◽  
Critical Dimension ◽  
Helix Angle ◽  
Single Shot ◽  
Twist Drill ◽  
Hole Quality ◽  
Drilling Parameters ◽  
Industry Practice ◽  
Maximum Thrust

Drilling two different materials in a layer, or stack-up, is being practiced widely in the aerospace industry to minimize critical dimension mismatch and error in the subsequent assembly process, but the compatibility of the drill to compensate the widely differing properties of composite is still a major challenge to the industry. In this paper, the effect of customized twist drill geometry and drilling parameters are being investigated based on the thrust force signature generated during the drilling of CFRP/Al7075-T6. Based on ANOVA, it is found that the maximum thrust force for both CFRP and Al7075-T6 are highly dependent on the feed rate. Through the analysis of maximum thrust force, supported by hole diameter error, hole surface roughness, and chip formation, it is found that the optimum tool parameters selection includes a helix angle of 30°, primary clearance angle of 6°, point angle of 130°, chisel edge angle of 30°, speed of 2600 rev/min and feed rate of 0.05 mm/rev. The optimum parameters obtained in this study are benchmarked against existing industry practice of the capability to produce higher hole quality and efficiency, which is set at 2600 rev/min for speed and 0.1 mm/rev for feed rate.

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