Spatial distribution of information effective for logic function learning in spin-wave reservoir computing chip utilizing spatiotemporal physical dynamics

Author(s):  
Takehiro Ichimura ◽  
Ryosho Nakane ◽  
Gouhei Tanaka ◽  
Akira Hirose
2021 ◽  
Vol 119 (11) ◽  
pp. 112403
Author(s):  
A. Papp ◽  
G. Csaba ◽  
W. Porod

2021 ◽  
Author(s):  
Abdulqader Mahmoud ◽  
Frederic Vanderveken ◽  
Christoph Adelmann ◽  
Florin Ciubotaru ◽  
Said Hamdioui ◽  
...  

By its very nature, Spin Wave (SW) interference provides intrinsic support for Majority logic function evaluation. Due to this and the fact that the 3-input Majority (MAJ3) gate and the Inverter constitute a universal Boolean logic gate set, different MAJ3 gate implementations have been proposed. However, they cannot be directly utilized for the construction of larger SW logic circuits as they lack a key cascading mechanism, i.e., fan-out capability. In this paper, we introduce a novel ladder-shaped SW MAJ3 gate design able to provide a maximum fan-out of 2 (FO2). The proper gate functionality is validated by means of micromagnetic simulations, which also demonstrate that the amplitude mismatch between the two outputs is negligible proving that an FO2 is properly achieved. Additionally, we evaluate the gate area and compare it with SW state-of-the-art and 15nm CMOS counterparts working under the same conditions. Our results indicate that the proposed structure requires 12x less area than the 15 nm CMOS MAJ3 gate and that at the gate level the fan-out capability results in 16% area savings, when compared with the state-of-the-art SW majority gate counterparts.


2021 ◽  
Author(s):  
Abdulqader Mahmoud ◽  
Frederic Vanderveken ◽  
Christoph Adelmann ◽  
Florin Ciubotaru ◽  
Said Hamdioui ◽  
...  

By its very nature, Spin Wave (SW) interference provides intrinsic support for Majority logic function evaluation. Due to this and the fact that the 3-input Majority (MAJ3) gate and the Inverter constitute a universal Boolean logic gate set, different MAJ3 gate implementations have been proposed. However, they cannot be directly utilized for the construction of larger SW logic circuits as they lack a key cascading mechanism, i.e., fan-out capability. In this paper, we introduce a novel ladder-shaped SW MAJ3 gate design able to provide a maximum fan-out of 2 (FO2). The proper gate functionality is validated by means of micromagnetic simulations, which also demonstrate that the amplitude mismatch between the two outputs is negligible proving that an FO2 is properly achieved. Additionally, we evaluate the gate area and compare it with SW state-of-the-art and 15nm CMOS counterparts working under the same conditions. Our results indicate that the proposed structure requires 12x less area than the 15 nm CMOS MAJ3 gate and that at the gate level the fan-out capability results in 16% area savings, when compared with the state-of-the-art SW majority gate counterparts.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Taichi Goto ◽  
Takuya Yoshimoto ◽  
Bungo Iwamoto ◽  
Kei Shimada ◽  
Caroline A. Ross ◽  
...  

Abstract We demonstrate a logic gate based on interference of forward volume spin waves (FVSWs) propagating in a 54 nm thick, 100 μm wide yttrium iron garnet waveguide grown epitaxially on a garnet substrate. Two FVSWs injected by coplanar waveguides were made to interfere constructively and destructively by varying their phase difference, showing an XNOR logic function. The reflected and resonant waves generated at the edges of the waveguide were suppressed using spin wave absorbers. The observed isolation ratio was 19 dB for a magnetic field of ~2.80 kOe ( = 223 kA m−1) applied perpendicular to the film. The wavelength and device length were ~8.9 μm and ~53 μm, respectively. Further, the interference state of the SWs was analyzed using three-dimensional radio frequency simulations.


Author(s):  
L. D. Jackel

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.


Author(s):  
Jayesh Bellare

Seeing is believing, but only after the sample preparation technique has received a systematic study and a full record is made of the treatment the sample gets.For microstructured liquids and suspensions, fast-freeze thermal fixation and cold-stage microscopy is perhaps the least artifact-laden technique. In the double-film specimen preparation technique, a layer of liquid sample is trapped between 100- and 400-mesh polymer (polyimide, PI) coated grids. Blotting against filter paper drains excess liquid and provides a thin specimen, which is fast-frozen by plunging into liquid nitrogen. This frozen sandwich (Fig. 1) is mounted in a cooling holder and viewed in TEM.Though extremely promising for visualization of liquid microstructures, this double-film technique suffers from a) ireproducibility and nonuniformity of sample thickness, b) low yield of imageable grid squares and c) nonuniform spatial distribution of particulates, which results in fewer being imaged.


Author(s):  
Auclair Gilles ◽  
Benoit Danièle

During these last 10 years, high performance correction procedures have been developed for classical EPMA, and it is nowadays possible to obtain accurate quantitative analysis even for soft X-ray radiations. It is also possible to perform EPMA by adapting this accurate quantitative procedures to unusual applications such as the measurement of the segregation on wide areas in as-cast and sheet steel products.The main objection for analysis of segregation in steel by means of a line-scan mode is that it requires a very heavy sampling plan to make sure that the most significant points are analyzed. Moreover only local chemical information is obtained whereas mechanical properties are also dependant on the volume fraction and the spatial distribution of highly segregated zones. For these reasons we have chosen to systematically acquire X-ray calibrated mappings which give pictures similar to optical micrographs. Although mapping requires lengthy acquisition time there is a corresponding increase in the information given by image anlysis.


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