High-speed Graded-channel GaN HEMTs with Linearity and Efficiency

Author(s):  
Jeong-Sun Moon ◽  
Bob Grabar ◽  
Mike Antcliffe ◽  
Joel Wong ◽  
Chuong Dao ◽  
...  
Keyword(s):  
2008 ◽  
Vol 18 (04) ◽  
pp. 913-922 ◽  
Author(s):  
SIDDHARTH RAJAN ◽  
UMESH K. MISHRA ◽  
TOMÁS PALACIOS

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.


Author(s):  
Haifeng Sun ◽  
Diego Marti ◽  
Stefano Tirelli ◽  
Andreas R. Alt ◽  
Hansruedi Benedickter ◽  
...  

We review the AlGaN/GaN high electron mobility transistor (HEMT) activities in the Millimeter-Wave Electronics Group at ETH-Zürich. Our group's main thrust in the AlGaN/GaN arena is the extension of device bandwidth to higher frequency bands. We demonstrated surprising performances for AlGaN/GaN HEMTs grown on high-resistivity (HR) silicon (111) substrates, and extended cutoff frequencies of 100 nm gate devices well into the millimeter (mm)-wave domain. Our results narrow the performance gap between GaN-on-SiC (or sapphire) and GaN-on-silicon and establish GaN-on-Si as a viable technology for low-cost mm-wave electronics. We here contrast the difference in behaviors observed in our laboratory between nominally identical devices built on high-resistivity silicon (HR-Si) and on sapphire substrates; we show high-speed devices with high-cutoff frequencies and breakdown voltages which combine fT,MAX × BV products as high as 5–10 THz V, and show AlGaN/GaN HEMTs with fT values exceeding 100 GHz on HR-Si. Although the bulk of our activities have so far focused on AlGaN/GaN HEMTs on HR-Si, our process produces excellent device performances when applied to GaN HEMTs on SiC as well: 100 nm gate transistors with fT > 125 GHz have been realized at ETH-Zürich.


2010 ◽  
Vol 208 (2) ◽  
pp. 429-433 ◽  
Author(s):  
Haifeng Sun ◽  
Andreas R. Alt ◽  
Hansruedi Benedickter ◽  
Eric Feltin ◽  
Jean-François Carlin ◽  
...  
Keyword(s):  

2020 ◽  
Vol 56 (13) ◽  
pp. 678-680
Author(s):  
J.S. Moon ◽  
R. Grabar ◽  
J. Wong ◽  
M. Antcliffe ◽  
P. Chen ◽  
...  

2017 ◽  
Vol 38 (1) ◽  
pp. 95-98 ◽  
Author(s):  
Joel Wong ◽  
Keisuke Shinohara ◽  
Andrea L. Corrion ◽  
David F. Brown ◽  
Zenon Carlos ◽  
...  
Keyword(s):  

Author(s):  
K. Shinohara ◽  
D. Regan ◽  
I. Milosavljevic ◽  
A. L. Corrion ◽  
D. F. Brown ◽  
...  

Author(s):  
E.D. Wolf

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.


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