scholarly journals High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz

2020 ◽  
Vol 56 (13) ◽  
pp. 678-680
Author(s):  
J.S. Moon ◽  
R. Grabar ◽  
J. Wong ◽  
M. Antcliffe ◽  
P. Chen ◽  
...  
Keyword(s):  
High Speed ◽  
Power Added Efficiency ◽  
Gan Hemts

AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS

2008 ◽  
Vol 18 (04) ◽  
pp. 913-922 ◽  
Author(s):  
SIDDHARTH RAJAN ◽  
UMESH K. MISHRA ◽  
TOMÁS PALACIOS
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Digital Circuits ◽  
Field Effect Transistors ◽  
Rf Power ◽  
Power Performance ◽  
Future Directions ◽  
Recent Developments ◽  
Gan Hemts ◽  
State Of Art

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

High-speed Graded-channel GaN HEMTs with Linearity and Efficiency

2020 ◽  
Author(s):  
Jeong-Sun Moon ◽  
Bob Grabar ◽  
Mike Antcliffe ◽  
Joel Wong ◽  
Chuong Dao ◽  
...  
Keyword(s):  
High Speed ◽  
Gan Hemts

scholarly journals Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

2011 ◽  
Vol 3 (3) ◽  
pp. 301-309 ◽  
Author(s):  
Olivier Jardel ◽  
Guillaume Callet ◽  
Jérémy Dufraisse ◽  
Michele Piazza ◽  
Nicolas Sarazin ◽  
...  
Keyword(s):  
High Frequency ◽  
Continuous Wave ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Power Added Efficiency ◽  
Electron Mobility Transistors ◽  
X Band ◽  
Gan Hemts ◽  
Load Pull ◽  
Interesting Alternative

A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

scholarly journals Millimeter-wave GaN-based HEMT development at ETH-Zürich

2010 ◽  
Vol 2 (1) ◽  
pp. 33-38 ◽  
Author(s):  
Haifeng Sun ◽  
Diego Marti ◽  
Stefano Tirelli ◽  
Andreas R. Alt ◽  
Hansruedi Benedickter ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Speed ◽  
Low Cost ◽  
High Electron Mobility Transistor ◽  
High Resistivity ◽  
High Electron ◽  
Cutoff Frequencies ◽  
Gan Hemts ◽  
The Difference ◽  
Gan On Si

We review the AlGaN/GaN high electron mobility transistor (HEMT) activities in the Millimeter-Wave Electronics Group at ETH-Zürich. Our group's main thrust in the AlGaN/GaN arena is the extension of device bandwidth to higher frequency bands. We demonstrated surprising performances for AlGaN/GaN HEMTs grown on high-resistivity (HR) silicon (111) substrates, and extended cutoff frequencies of 100 nm gate devices well into the millimeter (mm)-wave domain. Our results narrow the performance gap between GaN-on-SiC (or sapphire) and GaN-on-silicon and establish GaN-on-Si as a viable technology for low-cost mm-wave electronics. We here contrast the difference in behaviors observed in our laboratory between nominally identical devices built on high-resistivity silicon (HR-Si) and on sapphire substrates; we show high-speed devices with high-cutoff frequencies and breakdown voltages which combine fT,MAX × BV products as high as 5–10 THz V, and show AlGaN/GaN HEMTs with fT values exceeding 100 GHz on HR-Si. Although the bulk of our activities have so far focused on AlGaN/GaN HEMTs on HR-Si, our process produces excellent device performances when applied to GaN HEMTs on SiC as well: 100 nm gate transistors with fT > 125 GHz have been realized at ETH-Zürich.

scholarly journals Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 571 ◽  
Author(s):  
Shuman Mao ◽  
Yuehang Xu
Keyword(s):  
High Electron Mobility Transistors ◽  
Input Power ◽  
High Electron ◽  
Large Signal ◽  
Power Added Efficiency ◽  
Kink Effect ◽  
Proposed Model ◽  
Saturation Region ◽  
Gan Hemts ◽  
The Time Domain

The effect brought by the I–V kink effect on large signal performance of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated in this paper. An improved compact model was proposed to accurately characterize the I–V kink effect. The bias dependence of the I–V kink effect has also been taken into consideration. AlGaN/GaN HEMTs with different gate width were utilized to validate the proposed model. Built on the proposed model, the effect brought by the I–V kink effect on large signal performance has been studied. Results show that the I–V kink effect will lead to the degradation of characteristics, including output power, gain, and power-added efficiency at the saturation region. Furthermore, the influence of the I–V kink effect was found to be related with the input power and the static bias point in this work. The time domain waveform and AC dynamic load line were used for validation of results based on simulation. The consequences of this paper will be useful for the optimization of practical circuit design.

MBE-Grown AlGaN/GaN HEMTs on SiC

2004 ◽  
Vol 14 (03) ◽  
pp. 732-737 ◽  
Author(s):  
SIDDHARTH RAJAN ◽  
ARPAN CHAKRABORTY ◽  
UMESH K. MISHRA ◽  
CHRISTIANE POBLENZ ◽  
PATRICK WALTEREIT ◽  
...  
Keyword(s):  
Output Power ◽  
High Electron Mobility Transistors ◽  
Layer Growth ◽  
Carbon Doping ◽  
Limiting Factor ◽  
High Electron ◽  
Nucleation Layer ◽  
Power Added Efficiency ◽  
Electron Mobility Transistors ◽  
Gan Hemts

We report on the development of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on SiC using plasma-assisted molecular beam epitaxy (MBE). In this work, we show that performance comparable to state-of-the-art AlGaN/GaN HEMTs can be achieved using MBE-grown material. Buffer leakage was an important limiting factor for these devices. The use of either carbon-doped buffers, or low Al/N ratio in the nucleation layer growth were effective in reducing buffer leakage. Studies varying the thickness and concentration of the carbon doping were carried out to determine the effect of different carbon doping profiles on the insulating and dispersive properties of buffers, On devices without field plates, at 4 GHz an output power density of 12 W/mm was obtained with a power-added efficiency (PAE) of 46 % and gain of 14 dB. 15.6 W/mm with PAE of 56 % was obtained from these devices after field-plating. Two-tone linearity measurements of these devices were also carried out. At a C/I 3 level of 30 dBc, the devices measured had an output power of 1.9 W/mm with a PAE of 53 %. The effect of the Al/N ratio in the AlN nucleation layer on buffer leakage was studied. N -rich conditions yielded highly insulating GaN buffers without carbon doping. At 4 GHz, devices without field plates delivered 4.8 W/mm with a PAE of 62 %. At a higher drain bias (50 V), 8.1 W/mm with a PAE of 38 % was achieved.

scholarly journals A Low power, Highly Efficient, Linear, Enhanced wideband Class-J mode Power Amplifier for 5G Applications

2021 ◽  
Author(s):  
NAGISETTY SRID ◽  
Senthilpari‬ Chinnaiyan ◽  
Mardeni Roslee ◽  
Wong Yong ◽  
T.Nandha kumar
Keyword(s):  
Communication Networks ◽  
Power Amplifier ◽  
High Speed ◽  
Dynamic Range ◽  
Research Work ◽  
Cmos Technology ◽  
Large Signal ◽  
Good Efficiency ◽  
Power Added Efficiency ◽  
5 Ghz

Abstract In wireless communication networks, the necessity for high-speed data rates has increased in emerging 5G application areas. The existing Power amplifier (PA) topologies reported to date demonstrated their potential in achieving desired Power Added Efficiency (PAE) and linearity with the aid of different efficiency enhancement and linearization techniques. However, these harmonically tuned switching power amplifiers are restricted to narrow bandwidth, which makes them less appealing for broadband applications. Therefore, the challenge of designing a power amplifier with improved efficiency by maintaining linearity for a dynamic range of bandwidth becomes increasingly critical for PA designers. Recently developed class-J PA topology has proven its potential to obtain good efficiency while maintaining the linearity for wide bandwidth applications. This research work presents a methodology to design a 5 GHz Class-J mode PA topology using Silterra 0.13-µm CMOS technology. This research's main objectives are to determine the Ropt of the transistor and design a proper Output Matching Network (OMN) to obtain Class-J PA operation to make it suitable for 5G wireless applications. The simulation results represent that the proposed Class-J PA provides 27 dBm of maximum power output along with a maximum large-signal power gain of 13.8 dB and the small-signal gain of 17dB for a band with more than 500MHz with a 5V power supply into a 50- Ω load.

High Power-Added-Efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

2021 ◽  
Author(s):  
Xinchuang zhang ◽  
Bin Hou ◽  
Fuchun Jia ◽  
Hao Lu ◽  
Xuerui Niu ◽  
...  
Keyword(s):  
High Power ◽  
Atomic Level ◽  
Power Added Efficiency ◽  
Gan Hemts
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