Temperature dependent contact and channel sheet resistance extraction of GaN HEMT

2015 ◽  
Author(s):  
A. K. Sahoo ◽  
N. K. Subramani ◽  
J. C. Nallatamby ◽  
N. Rolland ◽  
R. Quere ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Temperature Dependent ◽  
Gan Hemt

Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCD11 ◽  
Author(s):  
Lars Heuken ◽  
Muhammad Alshahed ◽  
Alessandro Ottaviani ◽  
Mohammed Alomari ◽  
Dirk Fahle ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Temperature Dependent ◽  
Gan Hemt ◽  
Conduction Mechanisms

scholarly journals Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Yanli Liu ◽  
Xifeng Yang ◽  
Dunjun Chen ◽  
Hai Lu ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Stress State ◽  
Raman Scattering ◽  
Barrier Layer ◽  
Algan Layer ◽  
Temperature Dependent ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
Resonant Raman ◽  
Resonant Raman Scattering

The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. This good agreement indicates that the UV near-resonant Raman scattering can be a direct and effective method to characterize the stress state in thin AlGaN barrier layer of AlGaN/GaN HEMT heterostructures.

An analysis of the increase in sheet resistance with the lapse of time of Al0.3Ga0.7N/GaN HEMT structure wafers

2007 ◽  
Vol 4 (7) ◽  
pp. 2678-2681 ◽  
Author(s):  
Junjiroh Kikawa ◽  
Tomoyuki Yamada ◽  
Tadayoshi Tsuchiya ◽  
Shinichi Kamiya ◽  
Kenichi Kosaka ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Gan Hemt ◽  
Hemt Structure

Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPE

2010 ◽  
Vol 7 (7-8) ◽  
pp. 1967-1969 ◽  
Author(s):  
Kai Cheng ◽  
S. Degroote ◽  
M. Leys ◽  
F. Medjdoub ◽  
J. Derluyn ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Gan Hemt

scholarly journals A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
C. Sedrati ◽  
A. Bouabellou ◽  
A. Kabir ◽  
R. Haddad ◽  
M. Boudissa ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sheet Resistance Measurement ◽  
Cobalt Silicides

AbstractIn this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.

Investigations of temperature-dependent interface traps in AlGaN/GaN HEMT on CVD-diamond

2019 ◽  
Vol 12 (10) ◽  
pp. 106506 ◽  
Author(s):  
Kumud Ranjan ◽  
Subramaniam Arulkumaran ◽  
Geok Ing Ng
Keyword(s):  
Cvd Diamond ◽  
Interface Traps ◽  
Temperature Dependent ◽  
Gan Hemt

Improvements of surface morphology and sheet resistance of AlGaN/GaN HEMT structures using quasi AlGaN barrier layers

2007 ◽  
Vol 300 (1) ◽  
pp. 168-171 ◽  
Author(s):  
Y. Kawakami ◽  
X.Q. Shen ◽  
G. Piao ◽  
M. Shimizu ◽  
H. Nakanishi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Sheet Resistance ◽  
Barrier Layers ◽  
Gan Hemt ◽  
Algan Barrier

Correlation Between the Standard Deviation of Sheet Resistance and the Temperature of Rapid Thermal Annealing

1996 ◽  
Vol 429 ◽  
Author(s):  
X. W. Lin ◽  
D. Pramanik
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Standard Deviation ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Dependent ◽  
The Mean ◽  
Specific Temperature ◽  
Substrate Doping

AbstractRapid thermal annealing (RTA) induced reactions between Ti thin films and Si wafers were characterized by sheet resistance measurements. It was found that the standard deviation a of the measurements is RTA-temperature dependent, and strongly correlates with the mean sheet resistance R. A specific temperature was identified, corresponding to a sharp σ peak in the temperature regime associated with the C49-C54 TiSi2 phase transition. This temperature is characteristic of materials parameters such as Ti thickness and substrate doping species, and can be used to accurately monitor or compare the calibration of RTA systems.

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