Fabrication on Pure Silicon Oxide Membrane Coated TEM Grid for Polymer Residual Defect Analysis

2020 ◽  
Author(s):  
Irene Tee ◽  
Jie Zhu
Keyword(s):  
Silicon Oxide ◽  
Defect Analysis ◽  
Pure Silicon ◽  
Residual Defect ◽  
Oxide Membrane ◽  
Tem Grid

scholarly journals Composition, Mixing State and Water Affinity of Meteoric Smoke Analogue Nanoparticles Produced in a Non-Thermal Microwave Plasma Source

2018 ◽  
Vol 232 (5-6) ◽  
pp. 635-648 ◽  
Author(s):  
Mario Nachbar ◽  
Denis Duft ◽  
Alexei Kiselev ◽  
Thomas Leisner
Keyword(s):  
Silicon Oxide ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Stoichiometric Composition ◽  
Plasma Source ◽  
Mixing State ◽  
Iron Oxide Particles ◽  
Pure Silicon ◽  
Meteoric Smoke ◽  
Water Affinity

Abstract The article reports on the composition, mixing state and water affinity of iron silicate particles which were produced in a non-thermal low-pressure microwave plasma reactor. The particles are intended to be used as meteoric smoke particle analogues. We used the organometallic precursors ferrocene (Fe(C5H5)2) and tetraethyl orthosilicate (TEOS, Si(OC2H5)4) in various mixing ratios to produce nanoparticles with radii between 1 nm and 4 nm. The nanoparticles were deposited on sample grids and their stoichiometric composition was analyzed in an electron microscope using energy dispersive X-ray spectroscopy (EDS). We show that the pure silicon oxide and iron oxide particles consist of SiO2 and Fe2O3, respectively. For Fe:(Fe+Si) ratios between 0.2 and 0.8 our reactor produces (in contrast to other particle sources) mixed iron silicates with a stoichiometric composition according to FexSi(1−x)O3 (0≤x≤1). This indicates that the particles are formed by polymerization of FeO3 and SiO3 and that rearrangement to the more stable silicates ferrosilite (FeSiO3) and fayalite (Fe2SiO4) does not occur at these conditions. To investigate the internal mixing state of the particles, the H2O surface desorption energy of the particles was measured. We found that the nanoparticles are internally mixed and that differential coating resulting in a core-shell structure does not occur.

scholarly journals Polarization Induced Electro-Functionalization of Pore Walls: A Contactless Technology

Biosensors ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 121 ◽  
Author(s):  
Bouchet-Spinelli ◽  
Descamps ◽  
Liu ◽  
Ismail ◽  
Pham ◽  
...  
Keyword(s):  
Solid State ◽  
Surface Functionalization ◽  
Silicon Oxide ◽  
Pore Wall ◽  
Electrical Current ◽  
Microfluidic Channels ◽  
The Core ◽  
Detection And Identification ◽  
Oxide Membrane ◽  
Silicon Silicon

This review summarizes recent advances in micro- and nanopore technologies with a focus on the functionalization of pores using a promising method named contactless electro-functionalization (CLEF). CLEF enables the localized grafting of electroactive entities onto the inner wall of a micro- or nano-sized pore in a solid-state silicon/silicon oxide membrane. A voltage or electrical current applied across the pore induces the surface functionalization by electroactive entities exclusively on the inside pore wall, which is a significant improvement over existing methods. CLEF’s mechanism is based on the polarization of a sandwich-like silicon/silicon oxide membrane, creating electronic pathways between the core silicon and the electrolyte. Correlation between numerical simulations and experiments have validated this hypothesis. CLEF-induced micro- and nanopores functionalized with antibodies or oligonucleotides were successfully used for the detection and identification of cells and are promising sensitive biosensors. This technology could soon be successfully applied to planar configurations of pores, such as restrictions in microfluidic channels.

A Simulation System for Diffusive Oxidation of Silicon:One-Dimensional Analysis

1991 ◽  
Vol 46 (11) ◽  
pp. 955-966 ◽  
Author(s):  
Ulrich Weinert ◽  
Ernst Rank
Keyword(s):  
Thermal Oxidation ◽  
Silicon Oxide ◽  
Simulation System ◽  
One Dimensional ◽  
Pure Silicon ◽  
Diffusive Interface ◽  
Model Equations ◽  
The One ◽  
Sharp Interfaces ◽  
Silicon Silicon

AbstractThermal oxidation of silicon is described as a three-component thermodynamic local process involving silicon, silicon oxide, and oxygen molecules. A simplified system of model equations is used to demonstrate the evoluton of the Si-SiO2 interface. For the one-dimensional case the equivalence with the model of Deal and Grove could be shown analytically. For that purpose effective interface coordinates have been introduced which establish the connection between the conventional concept of sharp interfaces and our "diffusive" interface, i.e., a transition region between pure silicon and pure silicon oxide.

scholarly journals Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

2018 ◽  
Vol 9 ◽  
pp. 1501-1511 ◽  
Author(s):  
Daniel Hiller ◽  
Julian López-Vidrier ◽  
Keita Nomoto ◽  
Michael Wahl ◽  
Wolfgang Bock ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Silicon Oxide ◽  
Chemical Vapour ◽  
Atom Probe ◽  
Silicon Oxynitride ◽  
Pure Silicon ◽  
Free Carriers ◽  
Boron Doped ◽  
Doped Silicon ◽  
B Doping

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH4 and O2 can be used, which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current–voltage (I–V) measurements. The results clearly show that no free carriers, neither from P- nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs ≤5 nm in diameter despite the presence of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes.

Hybrids perfluorosulfonic acid ionomer and silicon oxide membrane for application in ion-exchange polymer-metal composite actuators

2009 ◽  
Vol 52 (10) ◽  
pp. 3061-3070 ◽  
Author(s):  
DongJie Guo ◽  
HaiTao Ding ◽  
Haiju Wei ◽  
Qingsong He ◽  
Min Yu ◽  
...  
Keyword(s):  
Ion Exchange ◽  
Silicon Oxide ◽  
Metal Composite ◽  
Perfluorosulfonic Acid ◽  
Polymer Metal ◽  
Oxide Membrane

scholarly journals Some investigations in röntgen spectra. Part III. -Fine structure of K-absorption edge of SiO 2

1931 ◽  
Vol 131 (818) ◽  
pp. 654-658 ◽  
Keyword(s):  
Fine Structure ◽  
Silicon Oxide ◽  
Wave Length ◽  
High Vacuum ◽  
Short Wave ◽  
X Rays ◽  
Pure Silicon ◽  
Short Wave Length ◽  
Low Dispersion ◽  
Made In

It is now well known from the works of Lindh, Fricke and others that the principal K or L edge is attended on its short wave-length side by a number of secondary edges. The usual method of obtaining this structure consists in putting absorbing screens in the path of X-rays before or after they are analysed by a suitable crystal. The chief difficulty in this is the preparation of absorbing screen of suitable thickness. Fricke as well as Lindh have used this method for the study of absorption spectra of several substances. The former author failed to obtain any K-absorption limit at all for silicon. This was probably due to his using thick absorbing screens coupled with the low dispersion which he obtained with a sugar crystal. Later Lindh succeeded in obtaining K-limits for both silicon and silicon oxide, and showed that as in so many other cases the K-edge of pure silicon is softer than that of the compound. He, however, did not succeed in getting any fine structure. The probable cause of this was again the use of screens of unsatisfactory thickness. This difficulty may be avoided by using the analysing crystal itself as an absorber when a suitable crystal is available. Lindsay and Van Dyke used this method successfully to study the fine structure of the calcium K-edge in calcite, gypsum and fluorite crystals. Nuttall has made partial use of this method in his study of structure of K-absorption edges of potassium and chlorine. Later Lindsay and Voorhees made use of this method to study the fine structure for different crystals containing iron. Following the same method the fine structure for silicon oxide was photographed and measured by using quartz as the analysing and absorbing crystal. The apparatus used was a high vacuum spectrograph of Professor Siegbahn’s design made in the laboratory workshop. Its adjustment and use is described in Part I. The continuous radiation was obtained from a tungsten anticathode formed by dovetailing a plate of this material on the copper anticathode which as already described had four sides.

XRR and SAXS Study of Hydrogenated Amorphous Silicon Oxycarbide (a-SiOC:H) Films

2007 ◽  
Vol 561-565 ◽  
pp. 1247-1250 ◽  
Author(s):  
Bibhu P. Swain
Keyword(s):  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Silicon Oxycarbide ◽  
Hydrogenated Silicon ◽  
X Ray ◽  
Pure Silicon ◽  
X Ray Scattering ◽  
Hydrogenated Amorphous

Thin films of hydrogenated silicon-oxycarbide (a-SiOCx:H) have largely replaced pure silicon oxide films as back end of line (BEOL) processing in Ultra Large Scale Integrate Circuit (ULSI). A single chamber system for hot wire chemical vapor deposition (HWCVD) was employed to deposit different films of a-SiOCx:H with 0.5 < x < 0.8. All films were characterized by infrared spectroscopy and X-ray photoelectron spectroscopy (XPS) to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity (XRR) and Small angle X- ray scattering (SAXS) to determine the porosity and inhomogeneities (clustering) in the films.

Soft X-ray Spectroscopic Characterization of Montmorillonite

2008 ◽  
Vol 1124 ◽  
Author(s):  
Jan-Erik Rubensson ◽  
Franz Hennies ◽  
Lars O Werme ◽  
Ola Karnland
Keyword(s):  
Absorption Spectrum ◽  
Silicon Oxide ◽  
Spectroscopic Characterization ◽  
Aluminum Oxides ◽  
Complex Samples ◽  
X Ray ◽  
Pure Silicon ◽  
Local Electronic Structure ◽  
X Ray Absorption

AbstractSoft X-ray spectroscopy was applied to study a calcium bentonite from the Kutch area in India. We recorded the X-ray absorption spectra from the L-edge of calcium, silicon, and aluminum, and from K-edge of oxygen. The Ca absorption spectrum shows a quasi-atomic behavior, while the Si spectrum closely simulates the absorption spectrum of a pure silicon oxide. The O K spectrum shows a pre-peak, which is absent in the spectra of both the pure, bulk aluminum and silicon oxides. The Al L spectrum is complex and shows almost no resemblance to the absorption spectrum of aluminum oxides. The chemical state of the Al atoms (in octahedral coordination) must, thus, be quite different from what is common in the oxides. The obtained data show that soft X-ray spectroscopy is a promising technique for studying clay minerals. It is capable of supplying unique information that is complementary to information accessible using other techniques; especially, it can be used to determine the local electronic structure at various atomic sites in the complex samples.

scholarly journals New Ultra-Thin Pure Silicon Window Grids for Transmission Electron Microscopy Samples

2009 ◽  
Vol 17 (2) ◽  
pp. 46-47
Author(s):  
James Roussie
Keyword(s):  
Electron Microscopy ◽  
Sample Preparation ◽  
Organic Contaminants ◽  
Silicon Oxide ◽  
Biological Molecules ◽  
Pure Silicon ◽  
Transmission Electron ◽  
Micron Diameter ◽  
Resolution Imaging ◽  
Silicon Membranes

Traditional sample preparation supports for electron microscopy have usually been thin films of amorphous or holey carbon stretched over a metallic grid. More recently introduced formats include organic polymers over metallic grids or silicon nitride and silicon oxide membranes over silicon frames. Here, the application of a nanofabricated silicon membrane technology as a novel sample preparation support for electron microscopy is described. These new supports offer several unique characteristics, including nanoscale thickness and pores, which may improve imaging and analysis of materials and biological molecules.Recently developed technology permits the fabrication of pure silicon membranes that are among the world's thinnest materials—only 5 to 15 nm thick. See Striemer et al., Nature (2007) 445: 749-751 for more details. These silicon membranes are also among the world's first membrane technologies to offer nanoscale pores of 5 to 50 nm. This combination of characteristics is unique and not shared by the materials currently employed as sample supports. Moreover, it suggests that these silicon membranes could overcome many of the problems associated with current generation materials. For example, the holes of lacey and holey carbon grids (1-5 micron diameter) are incompatible with the size of most nanotubes and nanoparticles (2-40 nm). Obtaining background-free images of the entire nanostructure is rarely possible with this incompatible combination of sizes. Another significant issue is the inability to vigorously plasma clean samples on carbon grids. In some cases, this inability to remove organic contaminants can prevent high-resolution imaging of samples.

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