Dielectric properties of sol-gel derived barium-strontium titanate (Ba/sub 0.4/Sr/sub 0.6/TiO/sub 3/) thin film

Author(s):  
S. Lahiry ◽  
V. Gupta ◽  
K. Sreenivas
2019 ◽  
Vol 16 (1) ◽  
pp. 65
Author(s):  
Rahmi Dewi ◽  
Tiara Pertiwi ◽  
Krisman Krisman

The thin film of Barium Strontium Titanate (BST) has been studied withcomposition ofby using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of  FESEM characterization for samples in temperature of 600oC and 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600oC and 650oC are 69.36Fand138.70F. The dielectric constant of the thin film of BST in temperature of 600oC and 650oC are 22.17 dan 131.56 respectively.


2020 ◽  
Vol 5 (1) ◽  
pp. 11-20
Author(s):  
Rahmi Dewi ◽  
Krisman Krisman ◽  
Zulkarnaen Zulkarnaen ◽  
Rahmi Afrida Syahraini ◽  
TS Luqman Husein

A thin layer of Barium Strontium Titanate Ba0.15Sr0.85TiO3 (BST) was developed on a glass substrate using a sol-gel method with annealing temperatures and spin coating process at 3500 rpm for 30 seconds. The annealing temperature varied from 600oC, 650oC, and 700oC.  Characterization of optical properties was developed using UV-Vis spectroscopy to determine the energy bandgap. The values of the BST thin layer energy band at the annealing temperature were 3.55 eV, 3.32 eV, and 3.10 eV, respectively. The results indicate that the BST thin film was a semiconductor material.


2017 ◽  
Vol 727 ◽  
pp. 942-946 ◽  
Author(s):  
Juan Li ◽  
Cong Chun Zhang ◽  
Yan Lei Wang ◽  
Yang Gao ◽  
Xiao Lin Zhao

Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10-6 A/cm2 and 5.35×10-8 A/cm2 respectively.


2008 ◽  
Vol 102 (1) ◽  
pp. 29-36 ◽  
Author(s):  
M. TYUNINA ◽  
M. PLEKH ◽  
J. LEVOSKA ◽  
M. VEHKAMÄKI ◽  
M. HATANPÄÄ ◽  
...  

Author(s):  
Rahmi Dewi ◽  
Krisman Krisman ◽  
Tiara Pertiwi ◽  
Tengku Luqman

Lapisan tipis Barium Strontium Titanate (BST) telah ditelaah dengan komposisi  Ba0.75 Sr0.25 TiO3 menggunakan metode sol-gel yang digabungkan pada suhu 600 dan 650oC. Lapisan tipis BST dikarakterisasi menggunakan Field Emission Scanning Electron Microscopy (FESEM) dan spektroskopi impedansi. Hasil dari karakterisasi FESEM untuk sampel pada suhu 600 dan 650oC ialah 55.83 nm dan 84.88 nm dari segi ketebalan secara berurutan. Hasil dari karakterisasi spektroskopi impedansi berdasarkan nilai frekuensi menunjukkan nilai impedansi yang nyata dan imajiner. Nilai kapasitsa pada frekuensi 20 Hz dari lapisan tipis BST pada suhu 600 dan 650oC ialah 69.36 dan 138.70 F. Konstanta dielektrik dari lapisan tipis BST pada suhu 600 dan 650oC ialah 22.17 dan 131.56 secara berurutan.   The thin film of Barium Strontium Titanate (BST) has been studied with composition of Ba0.75 Sr0.25 TiO3 by using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of FESEM characterization for samples in temperature of 600 dan 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600 dan 650oC are 69.36 F and 138.7oF. The dielectric constant of the thin film of BST in temperature of 600 dan 650oC are 22.17 and 131.56 respectively.


2009 ◽  
Vol 24 (2) ◽  
pp. 387-391 ◽  
Author(s):  
Jia-Xuan LIAO ◽  
Hong-Quan WANG ◽  
Xiao-Feng PAN ◽  
Xiang-Jun FU ◽  
Jia ZHANG ◽  
...  

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