Wideband LC VCO with 39.3 % Frequency Tuning Range for Dielectric Spectroscopy System

Author(s):  
Kiho Lee ◽  
Dongho Lee ◽  
Jusung Kim ◽  
Songcheol Hong
2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Yusaku Ito ◽  
Kenichi Okada ◽  
Kazuya Masu

This paper proposes a novel wideband LC-based voltage-controlled oscillator (VCO) for multistandard transceivers. The proposed VCO has a core LC-VCO and a tuning-range extension circuit, which consists of switches, a mixer, dividers, and variable gain combiners with a spurious rejection technique. The experimental results exhibit 0.98 to 6.6 GHz continuous frequency tuning with −206 dBc/Hz of FoMT, which is fabricated by using a 0.18 μm CMOS process. The frequency tuning range (FTR) is 149%, and the chip area is 800 μm × 540 μm.


Author(s):  
Shitesh Tiwari ◽  
Sumant Katiyal ◽  
Parag Parandkar

Voltage Controlled Oscillator (VCO) is an integral component of most of the receivers such as GSM, GPS etc. As name indicates, oscillation is controlled by varying the voltage at the capacitor of LC tank. By varying the voltage, VCO can generate variable frequency of oscillation. Different VCO Parameters are contrasted on the basis of phase noise, tuning range, power consumption and FOM. Out of these phase noise is dependent on quality factor, power consumption, oscillation frequency and current. So, design of LC VCO at low power, low phase noise can be obtained with low bias current at low voltage.  Nanosize transistors are also contributes towards low phase noise. This paper demonstrates the design of low phase noise LC VCO with 4.89 GHz tuning range from 7.33-11.22 GHz with center frequency at 7 GHz. The design uses 32nm technology with tuning voltage of 0-1.2 V. A very effective Phase noise of -114 dBc / Hz is obtained with FOM of -181 dBc/Hz. The proposed work has been compared with five peer LC VCO designs working at higher feature sizes and outcome of this performance comparison dictates that the proposed work working at better 32 nm technology outperformed amongst others in terms of achieving low Tuning voltage and moderate FoM, overshadowed by a little expense of power dissipation. 


Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 889
Author(s):  
Xiaoying Deng ◽  
Peiqi Tan

An ultra-low-power K-band LC-VCO (voltage-controlled oscillator) with a wide tuning range is proposed in this paper. Based on the current-reuse topology, a dynamic back-gate-biasing technique is utilized to reduce power consumption and increase tuning range. With this technique, small dimension cross-coupled pairs are allowed, reducing parasitic capacitors and power consumption. Implemented in SMIC 55 nm 1P7M CMOS process, the proposed VCO achieves a frequency tuning range of 19.1% from 22.2 GHz to 26.9 GHz, consuming only 1.9 mW–2.1 mW from 1.2 V supply and occupying a core area of 0.043 mm2. The phase noise ranges from −107.1 dBC/HZ to −101.9 dBc/Hz at 1 MHz offset over the whole tuning range, while the total harmonic distortion (THD) and output power achieve −40.6 dB and −2.9 dBm, respectively.


Author(s):  
Titus Oyedokun ◽  
Riana H. Geschke ◽  
Tinus Stander

Abstract We present a tunable planar groove gap waveguide (PGGWG) resonant cavity at Ka-band. The cavity demonstrates varactor loading and biasing without bridging wires or annular rings, as commonly is required in conventional substrate-integrated waveguide (SIW) resonant cavities. A detailed co-simulation strategy is also presented, with indicative parametric tuning data. Measured results indicate a 4.48% continuous frequency tuning range of 32.52–33.98 GHz and a Qu tuning range of 63–85, corresponding to the DC bias voltages of 0–16 V. Discrepancies between simulated and measured results are analyzed, and traced to process variation in the multi-layer printed circuit board stack, as well as unaccounted varactor parasitics and surface roughness.


2002 ◽  
Vol 25 (4) ◽  
pp. 307-319
Author(s):  
J. Rodriguez Tellez ◽  
N. T. Ali ◽  
B. Majeed

In this paper active inductor circuits are employed to assess their suitability for providing a tuning function in GaAs MMIC circuits. The specifications for a mobile handset amplifier and a bandpass filter operating from a 3 V supply rail are used as test vehicles. The design and simulation of the circuits employs a low-cost commercially available low pinch-off GaAs MESFET process. The suitability of active inductors for tuning in such applications considers issues such as frequency tuning range, noise, power consumption and stability.


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