scholarly journals Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs

2016 ◽  
Author(s):  
G. Romano ◽  
M. Riccio ◽  
L. Maresca ◽  
G. Breglio ◽  
A. Irace ◽  
...  
Keyword(s):  
Short Circuit ◽  
Design Parameters ◽  
Power Mosfets

scholarly journals A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

2016 ◽  
Vol 4 (3) ◽  
pp. 978-987 ◽  
Author(s):  
Gianpaolo Romano ◽  
Asad Fayyaz ◽  
Michele Riccio ◽  
Luca Maresca ◽  
Giovanni Breglio ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Power Mosfets ◽  
Comprehensive Study

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

2018 ◽  
Vol 65 (12) ◽  
pp. 5440-5447 ◽  
Author(s):  
Jiaxing Wei ◽  
Siyang Liu ◽  
Lanlan Yang ◽  
Jiong Fang ◽  
Ting Li ◽  
...  
Keyword(s):  
Short Circuit ◽  
Comprehensive Analysis ◽  
Electrical Parameters ◽  
Power Mosfets

scholarly journals Theory and Design of a Flexible Two-Stage Wideband Wilkinson Power Divider

Electronics ◽  
2021 ◽  
Vol 10 (17) ◽  
pp. 2168
Author(s):  
Antra Saxena ◽  
Mohammad Hashmi ◽  
Deepayan Banerjee ◽  
Muhammad Akmal Chaudhary
Keyword(s):  
Transfer Function ◽  
Transmission Lines ◽  
Short Circuit ◽  
Wide Band ◽  
Power Divider ◽  
Design Parameters ◽  
Two Stage ◽  
Quarter Wave ◽  
Band Pass ◽  
Wilkinson Power Divider

This article presents the design scheme of a wideband Wilkinson Power Divider (WPD) with two-stage architecture utilizing quarter-wave transmission lines and short-circuit stubs. The bandwidth of the proposed WPD is flexible and can be controlled using the design parameters. The proposed design achieves excellent isolation between output ports in addition good in-band performance. The analysis of the proposed circuit results in a simplified transfer function which is then equated with a standard band-pass transfer function to determine the parameters of transmission lines, stub’s impedances, and the value of the isolation resistors. Furthermore, it is also demonstrated that a simple alteration in the proposed circuit enables the design of a wideband DC isolated WPD that maintains a good in-band and isolation performance. A number of case studies have been included to highlight the flexibility of the proposed design. Two distinct prototypes are developed on different boards to demonstrate the wideband performance of the proposed design. An excellent agreement between the experimental and measured results for both the designs over a wide band including very good isolation between ports validate the proposed design.

Analytical and Experimental Studies on Induced Current Switching by a Fault-Proof Gas Insulated Earthing Switch

2010 ◽  
Vol 11 (5) ◽  
Author(s):  
Mandava Mohana Rao ◽  
Moutusi Paul ◽  
H.S. Jain
Keyword(s):  
Short Circuit ◽  
Experimental Studies ◽  
Short Circuit Current ◽  
Design Parameters ◽  
Induced Current ◽  
Current Switching ◽  
Test Circuit ◽  
Reliable Performance ◽  
Gas Insulated Substation ◽  
The Impact

Fault-proof earthing switches are one of the important modules of a gas insulated substation, as it enables make at 100 percent short circuit current, which is functionally different from maintenance earthing switches. The fault-proof earthing switch shall be designed to make and break electro-magnetically and electro-statically induced currents as per IEC-62271-102. The paper discusses the impact of “test circuit configurations and voltage” on test parameters for gas insulated fault-proof earthing switch utilizing simulation with PSCAD software. Authors record the development of a 145 kV gas insulated fault proof earthing switch by considering novel design features like minimum arcing/pre-arcing time, effective current transfer from arcing contact to ground terminal, etc. The development has been evaluated successfully for electro-magnetically and electro-statically induced current duties as per IEC. Finally, design parameters to be considered for ensuring reliable performance during induced current switching from fault-proof earthing switches are also discussed.

Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures

2017 ◽  
Vol 897 ◽  
pp. 545-548 ◽  
Author(s):  
Sauvik Chowdhury ◽  
Collin W. Hitchcock ◽  
T. Paul Chow
Keyword(s):  
Comparative Evaluation ◽  
Design Parameters ◽  
Electrical Characteristics ◽  
Cryogenic Temperatures ◽  
Short Channel Effects ◽  
Operating Characteristics ◽  
Short Channel ◽  
Power Mosfets ◽  
Unique Material ◽  
Channel Effects

We present a comparative study of the electrical characteristics of different 1200V commercial SiC power MOSFETs at cryogenic temperatures down to 77 K. As compared to conventional silicon power MOSFETs, SiC MOSFETs show very different operating characteristics at low temperatures which is due to unique material and design parameters used in SiC MOSFETs. Of particular interest is a non-linear mixed triode/pentode-like I-V characteristic exhibited by all SiC MOSFETs at 77 K, which is demonstrated to be due to short channel effects in the constituent JFET.

Sign in / Sign up

Export Citation Format

Share Document