Effect of 6 MeV electron beam irradiation on the field emission current noise behavior of graphene

Author(s):  
Ranjit V. Kashid ◽  
Sanjay D. Dhole ◽  
Mahendra A. More ◽  
L. S. Panchakarla
Author(s):  
Mahendra A. More ◽  
Ranjit V. Kashid ◽  
Sandip S. Patil ◽  
Deodatta R. Shinde ◽  
Dilip S. Joag

2004 ◽  
Vol 16 (6) ◽  
pp. 597-603 ◽  
Author(s):  
Fumihito Arai ◽  
◽  
Pou Liu ◽  
Lixin Dong ◽  
Toshio Fukuda ◽  
...  

Field emission properties of individual multi-walled carbon nanotubes (MWNTs) were studied in nanorobotic manipulation and electron-beam-induced deposition (EBID). Nanotube emitters are constructed by picking up and assembling individual nanotubes on a commercially available atomic force microscope (AFM) cantilever or a tungsten probe. The relationship between field emission current and interelectrode distance was obtained by changing the distance between the tip of the nanotube emitter and the counterpart anode, which can be potentially applied as the principle for an approaching sensor to detect nanometer scale distance by observing field emission current in real time. Field emission current on a microampere scale from a CNT emitter was shown to be strong enough for EBID without obviously degrading emitters. Deposit topology was related to current density or the emitter shape, suggesting that information on emitter geometry could be obtained from EBID deposits. Energy dispersive X-ray spectrometry (EDS) analysis of deposits from W(CO)6showed that the tungsten mass exceeds 80% on the average among compositions. Much higher voltage may degrade the emitter, and saturated current may be used to adjust the emitter length in a controlled way.


2020 ◽  
Vol 4 (1) ◽  
pp. 25
Author(s):  
Aniello Pelella ◽  
Alessandro Grillo ◽  
Enver Faella ◽  
Filippo Giubileo ◽  
Francesca Urban ◽  
...  

In this work, monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor deposition onto SiO2/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. We study their electric characteristics from 10−6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Moreover, Schottky metal contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) are investigated under electron beam irradiation conditions. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. It is shown that e-beam irradiation lowers the Schottky barrier at the contacts due to thermally induced atom diffusion and interfacial reactions. The study demonstrates that electron beam irradiation can be effectively used for contact improvement though local annealing. It is also demonstrated that the application of an external field by a metallic nanotip induces a field emission current, which can be modulated by the voltage applied to the Si substrate back-gate. Such a finding, that we attribute to gate-bias lowering of the MoS2 electron affinity, enables a new field-effect transistor based on field emission.


2006 ◽  
Vol 956 ◽  
Author(s):  
Sanju Gupta

ABSTRACTSevere environmental tolerability is the prime factor in the development of novel space materials exhibiting excellent physical properties accompanied by lightweight, reusability, and multifunctional capabilities. Diamond is known for its reputation being radiation hard besides a range of outstanding properties (electronic, optical, mechanical, and chemical) and hence it is preferable in harsh environments. Carbon nanotubes are also of great interest because of several unsurpassable physical properties and it needs to be shown that they are physically stable and structurally unaltered when subjected to irradiation. Therefore, a family of novel nanocarbons (nanodiamond and nanotubes) films deposited by microwave plasma-assisted chemical vapor deposition (MWCVD) technique was subjected to gamma radiation (1, 5, and 20 Mrads) and to medium energy electron-beam irradiation to study their effects on the microscopic structure and corresponding physical properties to establish property-structure correlation. Microstructural and physical properties characterizations prior to and post-irradiation include scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy (RS), X-ray diffraction (XRD), field emission (FE), and high-resolution transmission electron microscopy (HRTEM). Dramatic improvement in the field emission properties for microcrystalline diamond and relatively small but systematic behavior for nanocrystalline diamond with increasing radiation dose is discussed in terms of the critical role of defects which tends to form clusters. The results also indicate that nanocrystalline carbon tends to reach a state of damage saturation they are discussed in terms of sp3, sp2+δ ←→ sp2 C inter-conversion. The effects of electron beam irradiation on the carbon nanotube show that multi¡Vwalled nanotubes tend to be relatively more robust than those of single–walled. This is because increased exposure on an individual bundle of single-walled nanotubes promoted graphitization, pinching, and cross-linking similar to polymers forming intra-molecular junction (IMJ) within the area of electron beam focus, possibly through aggregates of amorphous carbon. Formation of novel nanostructures (nano– ring and helix– V like) due to irradiation is also observed. These studies gleam on the dynamics of nano-manufacturing and a regime of possible relevance to these materials for a) short-term space missions; b) radiation hard programmable logic circuits; and c) radiation pressure sensors.


Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.


Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.


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