The selective growth of a single phase calcium silicide film in the Ca—Si system by R.F. magnetron sputtering

2008 ◽  
Author(s):  
Yinye Yang ◽  
Quan Xie
Keyword(s):  
Magnetron Sputtering ◽  
Single Phase ◽  
Selective Growth ◽  
Silicide Film ◽  
Calcium Silicide

scholarly journals Synthesis and characterization of single-phase epitaxial Cr2N thin films by reactive magnetron sputtering

2018 ◽  
Vol 54 (2) ◽  
pp. 1434-1442 ◽  
Author(s):  
M. A. Gharavi ◽  
G. Greczynski ◽  
F. Eriksson ◽  
J. Lu ◽  
B. Balke ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Single Phase ◽  
Reactive Magnetron Sputtering ◽  
Synthesis And Characterization ◽  
Reactive Magnetron

Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 105-106 ◽  
pp. 259-262 ◽  
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
A.H. Cai ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Remarkable Improvement

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

Single-phase aluminum nitride films by dc-magnetron sputtering

1990 ◽  
Vol 5 (11) ◽  
pp. 2677-2681 ◽  
Author(s):  
J. S. Morgan ◽  
W. A. Bryden ◽  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
T. O. Poehler
Keyword(s):  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Single Phase ◽  
Target Surface ◽  
Partial Pressures ◽  
Wide Range ◽  
Single Crystal Sapphire ◽  
Deposited Film ◽  
Deposited Films

Single-phase aluminum nitride films were deposited onto fused quartz and single-crystal sapphire by current-controlled, reactive, de magnetron sputtering from an aluminum metal target. Optical and structural properties were observed to correlate systematically with the composition of the sputter gas over a wide range of nitrogen partial pressures. A transition in the electrical conductivity of the deposited films occurred as a function of N2 partial pressure. This transition is driven by the condition of the target surface. When the N2 partial pressure was high and the target surface was substantially covered with AlNx, the deposited film was insulating, stoichiometric AlN. When the N2 partial pressure was low and the target surface was substantially Al°, the deposited film was conducting, substoichiometric AlNx.

Structure and Optical Property of Cu2O:N Thin Film Deposited by Reactive Pulse Magnetron Sputtering

2014 ◽  
Vol 951 ◽  
pp. 104-108
Author(s):  
Xing Fa Zi ◽  
Rui Ming Liu ◽  
Qing Ye ◽  
Xin Zhu Shu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rate Ratio ◽  
Room Temperature ◽  
Single Phase ◽  
Optical Band Gap ◽  
Flow Rate Ratio ◽  
Pulse Magnetron ◽  
Sputtering Power ◽  
Reactive Pulse

N-doped Cu2O (Cu2O:N) thin films were deposited on glass substrate by reactive pulse magnetron sputtering method using Cu target. Crystalline phases of thin films were controlled by adjusting N2/ O2flow rate ratio and sputtering power precisely during the sputtering process, and the single phase of Cu2O(111) thin films were obtained at room temperature. The thin films deposited at different sputtering powers were characteristics of 2D growth and the root mean square (RMS) of surface roughness of thin films gradually increased with the increasing of sputtering power. The optical band gap (Eg) of thin films were in the range 2.18-2.35 eV, and slightly decreased with increasing of sputtering power from 45 W to 90 W.

Preparation of single-phase Ti2AlN coating by magnetron sputtering with cost-efficient hot-pressed Ti-Al-N targets

2018 ◽  
Vol 44 (14) ◽  
pp. 17530-17534 ◽  
Author(s):  
Yueming Li ◽  
Guorui Zhao ◽  
Hong Qi ◽  
Meishuan Li ◽  
Yufeng Zheng ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Single Phase ◽  
Cost Efficient

SPUTTERING DEPOSITION OF Tl–Ca–Ba–Cu–O THIN FILMS WITH ZERO RESISTANCE AT 101 K

1989 ◽  
Vol 03 (13) ◽  
pp. 1013-1016 ◽  
Author(s):  
S. L. YAN ◽  
X. J. HU ◽  
Q. X. SONG ◽  
H. L. CAO ◽  
J. YAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface Structure ◽  
Single Phase ◽  
Xrd Analysis ◽  
Dc Magnetron Sputtering ◽  
Ceramic Substrates ◽  
Sputtering Deposition ◽  
Post Annealing ◽  
Zero Resistance

Superconducting Tl–Ca–Ba–Cu–O thin films have been prepared by dc magnetron sputtering from a pair of Tl 2 Ca 1 Ba 3 Cu 4 O y bulk targets. The post-annealing films on ZrO 2 ceramic substrates exhibit an onset temperature of about 125 K and zero resistance as high as 101 K. SEM showed a smooth terraced surface structure. The XRD analysis proved that the films were polycrystalline and were not single phase superconducting material.

Mechanical Property of Magnesium Alloy Surface with Dense Oxide

2018 ◽  
Vol 941 ◽  
pp. 1827-1832
Author(s):  
Akira Watazu ◽  
Tsutomu Sonoda
Keyword(s):  
Magnesium Alloy ◽  
Oxide Film ◽  
Magnetron Sputtering ◽  
Magnesium Oxide ◽  
Single Phase ◽  
Oxide Phase ◽  
Radio Frequency Magnetron Sputtering ◽  
Alloy Substrate ◽  
Planar Magnetron ◽  
Sputtering System

Low Al single-phase magnesium alloy surfaces with dense magnesium oxide films were uniformly formed. The films were deposited with a radio frequency magnetron sputtering process with a planar magnetron sputtering system. The thickness of deposited magnesium oxide thin films was around 240 nm. According to the XRD results, a magnesium oxide phase film was formed on the substrate. The surface was uniform, and no cracks or exfoliation were observed. The deposited magnesium oxide film did not have any cracks or pores, and the surface of the sample was covered by magnesium oxide. The hardness of the magnesium oxide-coated magnesium alloy reached around Hv200, while that of the uncoated Mg-alloy was around Hv80. Moreover, the Vickers indenter under a 10-mN load indented the magnesium alloy substrate coated with the magnesium oxide film to a depth of around 640 nm, while that for the uncoated magnesium alloy substrate was around 620 nm. Meanwhile, the elasticity value for the magnesium alloy substrate coated with magnesium oxide film was around 5.3×1010Pa, while that of the uncoated magnesium alloy substrate was around 4.2×1010Pa.

Single-phase ε-Fe3N film on GaN grown by magnetron sputtering

2019 ◽  
Vol 6 (10) ◽  
pp. 106443 ◽  
Author(s):  
Henan Fang ◽  
Xiang Peng ◽  
Ying Li ◽  
Zhikuo Tao
Keyword(s):  
Magnetron Sputtering ◽  
Single Phase

Reactive DC Magnetron Sputtering of Vanadium Oxide Thin Films

2008 ◽  
Vol 587-588 ◽  
pp. 343-347 ◽  
Author(s):  
C. Batista ◽  
J. Mendes ◽  
Vasco Teixeira ◽  
Joaquim Carneiro
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Single Phase ◽  
Oxide Films ◽  
Wide Field ◽  
Dc Magnetron Sputtering ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films ◽  
Vanadium Oxide Films

Vanadium oxides are a class of materials with outstanding physical and chemical properties. They find a wide field of technological applications such as optical and electrical switching devices, light detectors, temperature sensors, micro batteries, etc. There are several studies regarding the production of vanadium oxide films by radio-frequency (RF) magnetron sputtering, and with increasing interest on the thermochromic VO2 phase. However, literature with focus on vanadium oxide films deposited by direct current (DC) magnetron sputtering is very limited. In this work, we have successfully deposited vanadium oxide thin films by reactive DC magnetron sputtering under several processing conditions. The effect of substrate type, temperature, and O2/Ar flow ratio on phase formation has been studied. Structural analysis and phase determination have been carried out by X-ray diffractometry (XRD). Some single phase samples were also analysed with respect to surface morphology by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thermochromic behaviour of single phase VO2(M) films has been evaluated by optical spectrophotometry.

Sign in / Sign up

Export Citation Format

Share Document