Measurement and Analysis of Depth Resolution using Active Stereo Cameras

2021 ◽  
pp. 1-1
Author(s):  
Te-Mei Wang ◽  
Zen-Chung Shih
Keyword(s):  
Depth Resolution ◽  
Stereo Cameras ◽  
Measurement And Analysis ◽  
Active Stereo

scholarly journals AUTOMATIC DETECTION AND TRACKING OF HUMAN HEADS USING AN ACTIVE STEREO VISION SYSTEM

2000 ◽  
Vol 14 (02) ◽  
pp. 137-166 ◽  
Author(s):  
CHENG-YUAN TANG ◽  
ZEN CHEN ◽  
YI-PING HUNG
Keyword(s):  
Template Matching ◽  
Vision System ◽  
Tracking System ◽  
Human Head ◽  
Stereo Image ◽  
Head Tracking ◽  
Detection And Tracking ◽  
Stereo Cameras ◽  
Active Stereo ◽  
Elliptical Model

A new head tracking algorithm for automatically detecting and tracking human heads in complex backgrounds is proposed. By using an elliptical model for the human head, our Maximum Likelihood (ML) head detector can reliably locate human heads in images having complex backgrounds and is relatively insensitive to illumination and rotation of the human heads. Our head detector consists of two channels: the horizontal and the vertical channels. Each channel is implemented by multiscale template matching. Using a hierarchical structure in implementing our head detector, the execution time for detecting the human heads in a 512×512 image is about 0.02 second in a Sparc 20 workstation (not including the time for image acquisition). Based on the ellipse-based ML head detector, we have developed a head tracking method that can monitor the entrance of a person, detect and track the person's head, and then control the stereo cameras to focus their gaze on this person's head. In this method, the ML head detector and the mutually-supported constraint are used to extract the corresponding ellipses in a stereo image pair. To implement a practical and reliable face detection and tracking system, further verification using facial features, such as eyes, mouth and nostrils, may be essential. The 3D position computed from the centers of the two corresponding ellipses is then used for fixation. An active stereo head has been used to perform the experiments and has demonstrated that the proposed approach is feasible and promising for practical uses.

Lateral resolution of the electron microbeam analysis

1978 ◽  
Vol 36 (1) ◽  
pp. 542-543
Author(s):  
H.J. Dudek
Keyword(s):  
Quantitative Analysis ◽  
Depth Resolution ◽  
Lateral Resolution ◽  
Cylindrical Particle ◽  
Correction Procedure ◽  
X Ray ◽  
Element Concentrations ◽  
Microbeam Analysis ◽  
The Matrix

The chemical inhomogenities in modern materials such as fibers, phases and inclusions, often have diameters in the region of one micrometer. Using electron microbeam analysis for the determination of the element concentrations one has to know the smallest possible diameter of such regions for a given accuracy of the quantitative analysis.In th is paper the correction procedure for the quantitative electron microbeam analysis is extended to a spacial problem to determine the smallest possible measurements of a cylindrical particle P of high D (depth resolution) and diameter L (lateral resolution) embeded in a matrix M and which has to be analysed quantitative with the accuracy q. The mathematical accounts lead to the following form of the characteristic x-ray intens ity of the element i of a particle P embeded in the matrix M in relation to the intensity of a standard S

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

The Basic Physical Principles of Ion, Electron, and X-Ray Detectors and Their Application to Microanalysis

1985 ◽  
Vol 43 ◽  
pp. 154-157
Author(s):  
A.J. Tousimis
Keyword(s):  
Ion Beam ◽  
Depth Resolution ◽  
Sample Surface ◽  
High Energy ◽  
X Rays ◽  
X Ray ◽  
Electrons And Ions ◽  
Spatial Depth ◽  
Minimum Surface Area ◽  
Physical Principles

An integral and of prime importance of any microtopography and microanalysis instrument system is its electron, x-ray and ion detector(s). The resolution and sensitivity of the electron microscope (TEM, SEM, STEM) and microanalyzers (SIMS and electron probe x-ray microanalyzers) are closely related to those of the sensing and recording devices incorporated with them.Table I lists characteristic sensitivities, minimum surface area and depth analyzed by various methods. Smaller ion, electron and x-ray beam diameters than those listed, are possible with currently available electromagnetic or electrostatic columns. Therefore, improvements in sensitivity and spatial/depth resolution of microanalysis will follow that of the detectors. In most of these methods, the sample surface is subjected to a stationary, line or raster scanning photon, electron or ion beam. The resultant radiation: photons (low energy) or high energy (x-rays), electrons and ions are detected and analyzed.

Analysis of completed commercial semiconductors using EPMA

1996 ◽  
Vol 54 ◽  
pp. 502-503
Author(s):  
R. Packwood ◽  
M.W. Phaneuf ◽  
V. Weatherall ◽  
I. Bassignana
Keyword(s):  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Semiconductor Industry ◽  
Detection Limits ◽  
High Technology ◽  
Depth Resolution ◽  
Analytical Instruments ◽  
Wide Range ◽  
Numerous Element ◽  
Choice Method

The development of specialized analytical instruments such as the SIMS, XPS, ISS etc., all with truly incredible abilities in certain areas, has given rise to the notion that electron probe microanalysis (EPMA) is an old fashioned and rather inadequate technique, and one that is of little or no use in such high technology fields as the semiconductor industry. Whilst it is true that the microprobe does not possess parts-per-billion sensitivity (ppb) or monolayer depth resolution it is also true that many times these extremes of performance are not essential and that a few tens of parts-per-million (ppm) and a few tens of nanometers depth resolution is all that is required. In fact, the microprobe may well be the second choice method for a wide range of analytical problems and even the method of choice for a few.The literature is replete with remarks that suggest the writer is confusing an SEM-EDXS combination with an instrument such as the Cameca SX-50. Even where this confusion does not exist, the literature discusses microprobe detection limits that are seldom stated to be as low as 100 ppm, whereas there are numerous element combinations for which 10-20 ppm is routinely attainable.

A New Numerical Model for Electron-Probe Analysis at High Depth Resolution

1996 ◽  
Vol 54 ◽  
pp. 490-491
Author(s):  
P.-F. Staub ◽  
C. Bonnelle ◽  
F. Vergand ◽  
P. Jonnard
Keyword(s):  
Electron Probe ◽  
Surface Segregation ◽  
Depth Distribution ◽  
Computing Time ◽  
Depth Resolution ◽  
Physical Parameters ◽  
Electron Probe Analysis ◽  
Interface Phases ◽  
Excitation Conditions ◽  
High Depth

Characterizing dimensionally and chemically nanometric structures such as surface segregation or interface phases can be performed efficiently using electron probe (EP) techniques at very low excitation conditions, i.e. using small incident energies (0.5<E0<5 keV) and low incident overvoltages (1<U0<1.7). In such extreme conditions, classical analytical EP models are generally pushed to their validity limits in terms of accuracy and physical consistency, and Monte-Carlo simulations are not convenient solutions as routine tools, because of their cost in computing time. In this context, we have developed an intermediate procedure, called IntriX, in which the ionization depth distributions Φ(ρz) are numerically reconstructed by integration of basic macroscopic physical parameters describing the electron beam/matter interaction, all of them being available under pre-established analytical forms. IntriX’s procedure consists in dividing the ionization depth distribution into three separate contributions:

Compact back-scattered electrons' energy analyzer for standard SEM

1994 ◽  
Vol 52 ◽  
pp. 488-489
Author(s):  
S. Likharev ◽  
A. Kramarenko ◽  
V. Vybornov
Keyword(s):  
Depth Resolution ◽  
High Energy ◽  
Primary Beam ◽  
Layer By Layer ◽  
Energy Analyzer ◽  
High Energy Part ◽  
Small Window ◽  
Energy Part ◽  
Wide Range ◽  
High Voltage Supply

At present time the interest is growing considerably for theoretical and experimental analysis of back-scattered electrons (BSE) energy spectra. It was discovered that a special angle and energy nitration of BSE flow could be used for increasing a spatial resolution of BSE mode, sample topography investigations and for layer-by layer visualizing of a depth structure. In the last case it was shown theoretically that in order to obtain suitable depth resolution it is necessary to select a part of BSE flow with the directions of velocities close to inverse to the primary beam and energies within a small window in the high-energy part of the whole spectrum.A wide range of such devices has been developed earlier, but all of them have considerable demerit: they can hardly be used with a standard SEM due to the necessity of sufficient SEM modifications like installation of large accessories in or out SEM chamber, mounting of specialized detector systems, input wires for high voltage supply, screening a primary beam from additional electromagnetic field, etc. In this report we present a new scheme of a compact BSE energy analyzer that is free of imperfections mentioned above.

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