High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory

2009 ◽  
Vol 30 (3) ◽  
pp. 265-268 ◽  
Author(s):  
Sung-Jin Choi ◽  
Jin-Woo Han ◽  
Moon-Gyu Jang ◽  
Jin Soo Kim ◽  
Kwang Hee Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Flash Memory ◽  
Low Voltage ◽  
Injection Efficiency ◽  
High Injection

Modified ITAT Model for Data Retention in Nanocrystals Based Flash Memory Gate Stack

2017 ◽  
Vol 45 ◽  
pp. 1-11
Author(s):  
Rasika Dhavse ◽  
Kumar Prashant ◽  
Chetan Dabhi ◽  
Anand Darji ◽  
R.M. Patrikar
Keyword(s):  
Flash Memory ◽  
Low Voltage ◽  
Flat Band ◽  
Data Retention ◽  
Gate Stack ◽  
Tunneling Model ◽  
Idle Mode ◽  
Direct Tunneling ◽  
Device Lifetime ◽  
P Type

This work applies combination of Direct Tunneling model and BSIM4 based ITAT model to explain the leakage of electrons from charged nanocrystals to p-type silicon substrate in data retention condition, for an ultra-thin tunnel oxide, low voltage programmable silicon nanocrystal based flash gate stack. Basic expressions of these models are modified to incorporate the nanocrystals related charge leakage in idle mode. The concept is supported by simulating these models and comparing them with the experimental data. Transition of electrons is considered as a result of Direct Tunneling and their trapping de-trapping via water related hydrogen traps. However, it is found that modified ITAT mechanism is the dominant one. Flat-band voltage shift profile fits accurately with the model with an extrapolated 10 years device lifetime without memory closure. 3 nm thick tunnel oxide and 100 nm sized nanocrystal fabrication with Electron Beam Lithography are main features of the devices.

Low voltage, scalable nanocrystal flash memory fabricated by templated self assembly

2004 ◽  
Author(s):  
K.W. Guarini ◽  
C.T. Black ◽  
Y. Zhang ◽  
I.V. Babich ◽  
E.M. Sikorski ◽  
...  
Keyword(s):  
Self Assembly ◽  
Flash Memory ◽  
Low Voltage

High-Power Laser Thyristors With High Injection Efficiency ($\lambda =890$ –910 nm)

2015 ◽  
Vol 27 (3) ◽  
pp. 307-310 ◽  
Author(s):  
Sergey O. Slipchenko ◽  
Aleksandr A. Podoskin ◽  
Alexsander V. Rozhkov ◽  
Nikita A. Pikhtin ◽  
Ilya S. Tarasov ◽  
...  
Keyword(s):  
High Power ◽  
High Power Laser ◽  
Power Laser ◽  
Injection Efficiency ◽  
High Injection

Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory

2009 ◽  
Vol 30 (1) ◽  
pp. 78-81 ◽  
Author(s):  
Sung-Jin Choi ◽  
Jin-Woo Han ◽  
Sungho Kim ◽  
Moon-Gyu Jang ◽  
Jin Soo Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Flash Memory
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