Effect of Surrounded-Channel Structure on Electrical Characteristics of $c$ -Axis Aligned Crystalline In–Ga–Zn–O Field-Effect Transistor

<span>This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temperatures and channel fin width (W<sub>F</sub>=5, 10, 20, 40, and 80 nm) are at first simulated in this study. The results show that the increasing of environmental temperature tends to increase threshold voltage, while the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) rise with rising working temperature. Also, the threshold voltage decreases with increasing channel fin width of transistor, while the SS and DIBL increase with increasing channel fin width of transistor, at minimum channel fin width, the SS is very near to the best and ideal then its value grows and going far from the ideal value with increasing channel fin width. So, according to these conditions, the minimum value as possible of fin width is the preferable one for FinFET with better electrical characteristics.</span>

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Полевой транзистор на протонной проводимости пленок оксида графена и нафиона

Физика и техника полупроводников ◽

10.21883/ftp.2018.03.45624.8594a ◽

2018 ◽

Vol 52 (3) ◽

pp. 370

Author(s):

В.А. Смирнов ◽

А.Д. Мокрушин ◽

Н.Н. Денисов ◽

Ю.А. Добровольский

Keyword(s):

Graphene Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Ion Current ◽

Negative Ion ◽

Current Gain ◽

Positive Bias ◽

Electrical Characteristics ◽

Proton Current ◽

Effect Transistor

AbstractProton conductivity in graphene oxide and Nafion films depending on humidity and voltages across electrodes is studied in the model of a field-effect transistor. The electrical characteristics of the films are similar to one another, but the mobility of positive charges in Nafion and the current gain are higher by 2–3 orders of magnitude compared with graphene oxide. The negative ion current in graphene-oxide films at positive bias voltage is significant compared with the proton current (up to ~10%), while it is almost lacking in Nafion films (<1%).

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Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect transistor under bending stresses

Semiconductor Science and Technology ◽

10.1088/1361-6641/aadfb5 ◽

2018 ◽

Vol 33 (10) ◽

pp. 105009 ◽

Cited By ~ 3

Author(s):

Yoonjoong Kim ◽

Sangsig Kim

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Electrical Characteristics ◽

Bending Stresses ◽

Effect Transistor

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The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Doklady BGUIR ◽

10.35596/1729-7648-2021-19-8-81-86 ◽

2022 ◽

Vol 19 (8) ◽

pp. 81-86

Author(s):

I. Yu. Lovshenko ◽

A. Yu. Voronov ◽

P. S. Roshchenko ◽

R. E. Ternov ◽

Ya. D. Galkin ◽

...

Keyword(s):

Field Effect ◽

Proton Energy ◽

Field Effect Transistor ◽

Drain Current ◽

Proton Flux ◽

High Electron ◽

Electrical Characteristics ◽

Device Structure ◽

Dual Channel ◽

Effect Transistor

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

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