Полевой транзистор на протонной проводимости пленок оксида графена и нафиона

AbstractProton conductivity in graphene oxide and Nafion films depending on humidity and voltages across electrodes is studied in the model of a field-effect transistor. The electrical characteristics of the films are similar to one another, but the mobility of positive charges in Nafion and the current gain are higher by 2–3 orders of magnitude compared with graphene oxide. The negative ion current in graphene-oxide films at positive bias voltage is significant compared with the proton current (up to ~10%), while it is almost lacking in Nafion films (<1%).

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Improved Electrical Characteristics of P-type Tunnel Field-Effect Transistor With Source-Pocket Junction Formed Using High-Angle Implantation

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320653 ◽

2019 ◽

Author(s):

Gaobo Xu ◽

Huaxiang Yin ◽

Qiuxia Xu ◽

Guilong Tao ◽

Guoliang Tian ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Electrical Characteristics ◽

High Angle ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

P Type

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Effect of Surrounded-Channel Structure on Electrical Characteristics of $c$ -Axis Aligned Crystalline In–Ga–Zn–O Field-Effect Transistor

IEEE Electron Device Letters ◽

10.1109/led.2015.2399911 ◽

2015 ◽

Vol 36 (4) ◽

pp. 309-311 ◽

Cited By ~ 7

Author(s):

Yoshiyuki Kobayashi ◽

Daisuke Matsubayashi ◽

Suguru Hondo ◽

Tsutomu Yamamoto ◽

Yutaka Okazaki ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Channel Structure ◽

Electrical Characteristics ◽

Effect Transistor

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Ultrasensitive detection of orthophosphate ions with reduced graphene oxide/ferritin field-effect transistor sensors

Environmental Science Nano ◽

10.1039/c6en00661b ◽

2017 ◽

Vol 4 (4) ◽

pp. 856-863 ◽

Cited By ~ 10

Author(s):

Shun Mao ◽

Haihui Pu ◽

Jingbo Chang ◽

Xiaoyu Sui ◽

Guihua Zhou ◽

...

Keyword(s):

Graphene Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Ultrasensitive Detection ◽

Phosphorus Level ◽

Reduced Graphene ◽

Effect Transistor ◽

Increasing Demand ◽

Water Eutrophication ◽

Phosphorus Determination

The phosphorus level is one of the major parameters in evaluating water eutrophication and there is an increasing demand for accurate and real-time monitoring technology for phosphorus determination.

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The impact of channel fin width on electrical characteristics of Si-FinFET

International Journal of Electrical and Computer Engineering (IJECE) ◽

10.11591/ijece.v12i1.pp201-207 ◽

2022 ◽

Vol 12 (1) ◽

pp. 201

Author(s):

Yousif Atalla ◽

Yasir Hashim ◽

Abdul Nasir Abd. Ghafar

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Environmental Temperature ◽

Simulation Tool ◽

Electrical Characteristics ◽

Working Temperature ◽

Effect Transistor ◽

The Impact ◽

The Ideal

<span>This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temperatures and channel fin width (W<sub>F</sub>=5, 10, 20, 40, and 80 nm) are at first simulated in this study. The results show that the increasing of environmental temperature tends to increase threshold voltage, while the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) rise with rising working temperature. Also, the threshold voltage decreases with increasing channel fin width of transistor, while the SS and DIBL increase with increasing channel fin width of transistor, at minimum channel fin width, the SS is very near to the best and ideal then its value grows and going far from the ideal value with increasing channel fin width. So, according to these conditions, the minimum value as possible of fin width is the preferable one for FinFET with better electrical characteristics.</span>

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Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect transistor under bending stresses

Semiconductor Science and Technology ◽

10.1088/1361-6641/aadfb5 ◽

2018 ◽

Vol 33 (10) ◽

pp. 105009 ◽

Cited By ~ 3

Author(s):

Yoonjoong Kim ◽

Sangsig Kim

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Electrical Characteristics ◽

Bending Stresses ◽

Effect Transistor

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The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Doklady BGUIR ◽

10.35596/1729-7648-2021-19-8-81-86 ◽

2022 ◽

Vol 19 (8) ◽

pp. 81-86

Author(s):

I. Yu. Lovshenko ◽

A. Yu. Voronov ◽

P. S. Roshchenko ◽

R. E. Ternov ◽

Ya. D. Galkin ◽

...

Keyword(s):

Field Effect ◽

Proton Energy ◽

Field Effect Transistor ◽

Drain Current ◽

Proton Flux ◽

High Electron ◽

Electrical Characteristics ◽

Device Structure ◽

Dual Channel ◽

Effect Transistor

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

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