High-Temperature Cycle Durability of Superplastic Al–Zn Eutectoid Solder Joints With Stress Relaxation Characteristics for SiC Power Semiconductor Devices

2019 ◽  
Vol 40 (2) ◽  
pp. 303-306 ◽  
Author(s):  
Katsuaki Saito ◽  
Kunihiro Tamahashi ◽  
Takashi Inami ◽  
Mamoru Kobiyama ◽  
Yasushi Sasajima ◽  
...  
Keyword(s):  
High Temperature ◽  
Stress Relaxation ◽  
Solder Joints ◽  
Semiconductor Devices ◽  
Temperature Cycle ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Relaxation Characteristics

scholarly journals Pb-Free High Temperature Solder Joints for Power Semiconductor Devices

2009 ◽  
Vol 2 (1) ◽  
pp. 79-84 ◽  
Author(s):  
Yasushi Yamada ◽  
Yoshikazu Takaku ◽  
Yuji Yagi ◽  
Ikuo Nakagawa ◽  
Takashi Atsumi ◽  
...  
Keyword(s):  
High Temperature ◽  
Solder Joints ◽  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
High Temperature Solder

Sandwich Structured Power Module for High Temperature SiC Power Semiconductor Devices

2014 ◽  
Vol 2014 (1) ◽  
pp. 000757-000762 ◽  
Author(s):  
Takeshi ANZAI ◽  
Yoshinori MURAKAMI ◽  
Shinji SATO ◽  
Hidekazu TANISAWA ◽  
Kohei HIYAMA ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
High Temperature ◽  
Semiconductor Devices ◽  
Ceramic Substrate ◽  
Power Module ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
High Temperature Operation

A high temperature sandwich structured power module for high temperature SiC power semiconductor devices has been accomplished. Problems were found in the high temperature building-up process of the module caused by excess warpage of the ceramic substrate. Also the high temperature operation of the power module brings an excess warpage of the structure caused by parts having different coefficients of thermal expansion (CTEs) from each other. In this paper, some countermeasures to overcome the problems are demonstrated.

Strategies for improving the reliability of solder joints on power semiconductor devices

2004 ◽  
Vol 16 (2) ◽  
pp. 27-40 ◽  
Author(s):  
Guo‐Quan Lu ◽  
Xingsheng Liu ◽  
Sihua Wen ◽  
Jesus Noel Calata ◽  
John G. Bai
Keyword(s):  
Solder Joints ◽  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Reliability Of Solder Joints

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 10 (4) ◽  
pp. 138-143 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200°C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, ROHM, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200°C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000082-000087 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200 °C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, Rohm, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200 °C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

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