Analysis of the oscillation frequency and waveform amplitude for a high-frequency differential ring oscillator

2013 ◽  
Author(s):  
Chaojiang Li ◽  
Fei Gong ◽  
Pingshan Wang
Keyword(s):  
High Frequency ◽  
Oscillation Frequency ◽  
Ring Oscillator ◽  
Differential Ring ◽  
Waveform Amplitude

Low Voltage and High Oscillation Frequency Gated Ring Oscillator Using Bootstrap Technique

2013 ◽  
Vol 596 ◽  
pp. 195-198
Author(s):  
Nobukazu Takai ◽  
Ken Murakami ◽  
Haruo Kobayashi
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Frequency ◽  
Oscillation Frequency ◽  
Low Voltage ◽  
Ring Oscillator ◽  
Low Power Consumption ◽  
High Oscillation ◽  
High Oscillation Frequency ◽  
Boot Strap

In this paper, a high frequency ring oscillator with low power consumption is proposed.The proposed ring oscillator is based on GRO by applying boot strap technique. Simulation resultsindicate that the FoM(Power Consumption/Oscillation Frequency) of the proposed ring oscillator isless than that of the conventional ring oscillator.

scholarly journals Design and Characterization of Nano-Displacement Sensor with High-Frequency Oscillators

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Akio Kitagawa
Keyword(s):  
High Frequency ◽  
Oscillation Frequency ◽  
Target Object ◽  
Ring Oscillator ◽  
Displacement Sensor ◽  
Sensor Electrode ◽  
Free Running

The circuitry of a capacitive nanometer displacement sensor using the ring oscillator has been analyzed and characterized. We focus on the sensitivity of the sensor to detect the nanometer displacement or strain. The displaced target object must be conductive and the medium around the target object must be an insulator or a vacuum. The sensitivity in the range ofL< 1 μm is enhanced with decreases in the size of the sensor electrode, and using a higher free-running oscillation frequency can increase sensitivity. The proposed sensor, which converts the displacement of the target object to the oscillation frequency, was fabricated with CMOS 350 nm technology, and the sensitivity was estimated at 8.16 kHz/nm. The results of our study indicated that the presented sensor has enough sensitivity to detect the nanometer displacement of the target object at a distance within 1 μm from the surface of the sensor electrode.

Infrared Oscillators in Conventional Carbon Nanotube FET Technology

2015 ◽  
Vol 24 (04) ◽  
pp. 1550053
Author(s):  
Lobna I'msaddak ◽  
Dalenda Ben Issa ◽  
Abdennaceur Kachouri ◽  
Mounir Samet ◽  
Hekmet Samet
Keyword(s):  
Power Consumption ◽  
Response Time ◽  
Oscillation Frequency ◽  
Ring Oscillator ◽  
Propagation Time ◽  
Type C ◽  
P Type ◽  
Lc Tank ◽  
The Impact ◽  
Carbon Nanotube Fet

This paper presents the design of C-CNTFET oscillator's arrays for infrared 'IR' technology. These arrays are contained by both of the LC-tank and the voltage control 'coupled N- and P-type C-CNTFET LC-tank' oscillators. In this paper, the analysis of the impact of CNT diameter variations and the nonlinear capacitances (C GD and C GS ) were introduced, especially on propagation time, oscillation frequency and power consumption. The C-CNTFET inverter, ring oscillator, LC-tank and coupled N- and P-type C-CNTFET LC-tank oscillator structures were designed and their speeding and performances have been investigated with the proposed n-type of C-CNTFET model supplied by a 0.5 V power voltage. Simulation results show that the n- and p-types LC-tank oscillator circuit designs achieved an approximately equal oscillation frequency, response time and power consumption. Whereas the coupled N- and P-type C-CNTFET LC-tank oscillator has the lowest power consumption equal to 0.13 μW, the highest oscillation frequency (10.08 THz) and the fastest response time (1.81 ps).

scholarly journals ECL-Based SiC Logic Circuits for Extreme Temperatures

2015 ◽  
Vol 821-823 ◽  
pp. 910-913 ◽  
Author(s):  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Mikael Östling ◽  
Carl Mikael Zetterling
Keyword(s):  
Power Consumption ◽  
Oscillation Frequency ◽  
Digital Circuits ◽  
Supply Voltage ◽  
Logic Circuits ◽  
Ring Oscillator ◽  
Extreme Temperatures ◽  
Temperature Range ◽  
Stable Noise ◽  
Gate Design

Integrated digital circuits, fabricated in a bipolar SiC technology, have been successfully tested up to 600 °C. Operated with-15 V supply voltage from 27 up to 600 °C OR-NOR gates exhibit stable noise margins of about 1 or 1.5 V depending on the gate design, and increasing delay-power consumption product in the range 100 - 200 nJ. In the same temperature range an oscillation frequency of about 1 MHz is also reported for an 11-stage ring oscillator.

Gas transport during high-frequency ventilation

1983 ◽  
Vol 55 (2) ◽  
pp. 472-478 ◽  
Author(s):  
V. Brusasco ◽  
T. J. Knopp ◽  
K. Rehder
Keyword(s):  
Stroke Volume ◽  
Dead Space ◽  
High Frequency ◽  
Oscillation Frequency ◽  
High Frequency Ventilation ◽  
Dead Space Volume ◽  
Entire Lung ◽  
Frequency Ventilation ◽  
Gas Volume ◽  
Space Volume

During high-frequency small-volume ventilation (HFV), the transport rate of gas from the mouth to a lung region is a function of two conductances (conductance is the transfer rate of a gas divided by its partial pressure difference): regional longitudinal gas conductance along the airways (Grlongi) and gas conductance between lung regions (Ginter). Grlongi per unit regional lung (gas) volume [Grlongi/(Vr beta g)] was determined during HFV in 11 anesthetized paralyzed dogs lying supine. The distribution of Grlongi/(Vr beta g) was nearly uniform during HFV when stroke volumes were less than approximately two-thirds of the Fowler dead-space volume. By contrast, the distribution of Grlongi/(Vr beta g) was nonuniform when the stroke volume exceeded approximately two-thirds of the Fowler dead-space volume and the oscillation frequency was 5 Hz. Gas conductance along the airways per unit lung gas volume [average Glongi/(V beta g)], for the entire lung, increased with stroke volume at all frequencies, but for a given product of oscillation frequency and stroke volume, the average Glongi/(V beta g) was greater when stroke volume was large and oscillation frequency was low. The average Glongi/(V beta g) increased with frequency up to a maximal value; the frequency at which the maximum occurred depended on the kinematic viscosity of the inspired gas mixture.

scholarly journals Design of High frequency Voltage Controlled Oscillators for Phase Locked Loop

2018 ◽  
Vol 7 (3.12) ◽  
pp. 871
Author(s):  
Thejusraj. H ◽  
Prithivi Raj ◽  
J Selvakumar ◽  
S Praveen Kumar
Keyword(s):  
Power Consumption ◽  
High Frequency ◽  
High Speed ◽  
Phase Locked Loop ◽  
Clock Recovery ◽  
Ring Oscillator ◽  
Voltage Controlled Oscillator ◽  
Voltage Controlled Oscillators ◽  
Clock Generation ◽  
Consumption Values

This paper presents the analysis of various oscillators that generate high frequency of oscillation for high speed communication, clock generation and clock recovery. The Ring oscillator and the Current Starved Voltage Controlled Oscillator(CSVCO) (for 5-stagewithout resistor and with resistor) have been implemented using the Cadence Virtuoso tool in 90 nm technology. The generated frequency of oscillation and the power consumption values of the voltage controlled oscillators have been calculated after inclusion in the PLL, and were also compared to identify the most suitable voltage controlled oscillator for a given application.

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