The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain

Author(s):  
Kuo-Liang Yeh ◽  
Wei-Lun Hong ◽  
Jyh-Chyurn Guo
2013 ◽  
Vol 649 ◽  
pp. 277-280
Author(s):  
Petra Berková ◽  
Pavel Berka

Through the use of a spectral analysis of the source of noise – person’s movement over the ceiling construction – it was found out that in this kind of noise distinctive low-frequency tone components occur (31,5 - 40 Hz) which is beyond the evaluation area of the impact sound insulation of the ceiling construction, s. [2], [3].


2010 ◽  
Vol 54 (12) ◽  
pp. 1592-1597 ◽  
Author(s):  
M. Rodrigues ◽  
J.A. Martino ◽  
A. Mercha ◽  
N. Collaert ◽  
E. Simoen ◽  
...  

2011 ◽  
Vol 324 ◽  
pp. 441-444 ◽  
Author(s):  
Jalal Jomaah ◽  
Majida Fadlallah ◽  
Gerard Ghibaudo

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.


1973 ◽  
Vol 36 (3_suppl) ◽  
pp. 1129-1130 ◽  
Author(s):  
William D. Trotter ◽  
Franklin H. Silverman

4 studies concerned with the impact of a miniature low-frequency noise generator (Stutter-Aid) on stuttering are summarized.


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