A combination of solution synthesis & solution combustion synthesis for highly conducting and transparent Aluminum Zinc Oxide thin films

Author(s):  
Sana Ullaha ◽  
Fabio De Matteis ◽  
Rita Branquinho ◽  
Elvira Fortunato ◽  
Rodrigo Martins ◽  
...  
2020 ◽  
Vol 12 (24) ◽  
pp. 10423 ◽  
Author(s):  
Sana Ullah ◽  
Rita Branquinho ◽  
Tiago Mateus ◽  
Rodrigo Martins ◽  
Elvira Fortunato ◽  
...  

Sunlight is arguably the most promising continuous and cheap alternative sustainable energy source available at almost all living places of the human world. Photovoltaics (PV) is a process of direct conversion of sunlight into electricity and has become a technology of choice for sustainable production of cleaner and safer energy. The solar cell is the main component of any PV technology and transparent conducting oxides (TCO) comprising wide band gap semiconductors are an essential component of every PV technology. In this research, transparent conducting thin films were prepared by solution combustion synthesis of metal oxide nitrates wherein the use of indium is substituted or reduced. Individual 0.5 M indium, gallium and zinc oxide source solutions were mixed in ratios of 1:9 and 9:1 to obtain precursor solutions. Indium-rich IZO (A1), zinc-rich IZO (B1), gallium-rich GZO (C1) and zinc-rich GZO (D1) thin films were prepared through spin coating deposition. In the case of A1 and B1 thin films, electrical resistivity obtained was 3.4 × 10−3 Ω-cm and 7.9 × 10−3 Ω-cm, respectively. While C1 films remained insulating, D1 films showed an electrical resistivity of 1.3 × 10−2 Ω-cm. The optical transmittance remained more than 80% in visible for all films. Films with necessary transparent conducting properties were applied in an all solution-processed solar cell device and then characterized. The efficiency of 1.66%, 2.17%, and 0.77% was obtained for A1, B1, and D1 TCOs, respectively, while 6.88% was obtained using commercial fluorine doped SnO2: (FTO) TCO. The results are encouraging for the preparation of indium-free TCOs towards solution-processed thin-film photovoltaic devices. It is also observed that better filtration of precursor solutions and improving surface roughness would further reduce sheet resistance and improve solar cell efficiency.


2015 ◽  
Vol 49 (8) ◽  
pp. 1278-1288 ◽  
Author(s):  
Claudiu Lung ◽  
Daniel Marconi ◽  
Maria Toma ◽  
Aurel Pop

2008 ◽  
Vol 104 (11) ◽  
pp. 114314 ◽  
Author(s):  
Sy-Hann Chen ◽  
Chang-Feng Yu ◽  
Yung-Shao Lin ◽  
Wen-Jia Xie ◽  
Ting-Wei Hsu ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3074
Author(s):  
Apostolos Ioakeimidis ◽  
Ioannis T. Papadas ◽  
Eirini D. Koutsouroubi ◽  
Gerasimos S. Armatas ◽  
Stelios A. Choulis

Low temperature solution combustion synthesis emerges as a facile method for the synthesis of functional metal oxides thin films for electronic applications. We study the solution combustion synthesis process of Cu:NiOx using different molar ratios (w/o, 0.1 and 1.5) of fuel acetylacetone (Acac) to oxidizer (Cu, Ni Nitrates) as a function of thermal annealing temperatures 150, 200, and 300 °C. The solution combustion synthesis process, in both thin films and bulk Cu:NiOx, is investigated. Thermal analysis studies using TGA and DTA reveal that the Cu:NiOx thin films show a more gradual mass loss while the bulk Cu:NiOx exhibits a distinct combustion process. The thin films can crystallize to Cu:NiOx at an annealing temperature of 300 °C, irrespective of the Acac/Oxidizer ratio, whereas lower annealing temperatures (150 and 200 °C) produce amorphous materials. A detail characterization study of solution combustion synthesized Cu:NiOx, including XPS, UV-Vis, AFM, and Contact angle measurements, is presented. Finally, 50 nm Cu:NiOx thin films are introduced as HTLs within the inverted perovskite solar cell device architecture. The Cu:NiOx HTL annealed at 150 and 200 °C provided PVSCs with limited functionality, whereas efficient triple-cation Cs0.04(MA0.17FA0.83)0.96 Pb(I0.83Br0.17)3-based PVSCs achieved for Cu:NiOx HTLs for annealing temperature of 300 °C.


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