An optical RIE process uniformity control sensor

Author(s):  
S.C. Shannon ◽  
W. Pruka ◽  
J.P. Holloway ◽  
M. Brake
Keyword(s):  
Agronomy ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1254
Author(s):  
Marcus Jones ◽  
Marin Harbur ◽  
Ken J. Moore

Plot size has an important impact on variation among plots in agronomic field trials, but is rarely considered during the design process. Uniformity trials can inform a researcher about underlying variance, but are seldom used due to their laborious nature. The objective of this research was to describe variation in maize field trials among field plots of varying size and develop a tool to optimize field-trial design using uniformity-trial statistics. Six uniformity trials were conducted in 2015–2016 in conjunction with Iowa State University and WinField United. All six uniformity trials exhibited a negative asymptotic relationship between variance and plot size. Variance per unit area was reduced over 50% with plots 41.8 m2 in size and over 75% when using a plot size >111.5 m2 compared to a 13.9 m2 plot. Plot shape within a fixed plot size did not influence variance. The data illustrated fewer replicates were needed as plot size increased, since larger plots reduced variability. Use of a Shiny web application is demonstrated that allows a researcher to upload a yield map and consider uniformity-trial statistics to inform plot size and replicate decisions.


1996 ◽  
Author(s):  
P.P. Ward ◽  
M.L. Smith ◽  
J.O. Stevenson ◽  
R. Smedley

Author(s):  
Ozan Altin ◽  
Samet Ozturk ◽  
Huseyin Topcam ◽  
Ozan Karatas ◽  
Francesco Marra ◽  
...  

2008 ◽  
Vol 9 (3) ◽  
pp. 385-395 ◽  
Author(s):  
K. Mehauden ◽  
S. Bakalis ◽  
P.W. Cox ◽  
P.J. Fryer ◽  
M.J.H. Simmons

2003 ◽  
Vol 766 ◽  
Author(s):  
A. Jindal ◽  
J.Q. Lu ◽  
Y. Kwon ◽  
G. Rajagopalan ◽  
J.J. McMahon ◽  
...  

AbstractA three-step baseline process for thinning of bonded wafers for applications in threedimensional (3D) integration is presented. The Si substrate of top bonded wafer is uniformly thinned to ~35 μm by backside grinding and polishing, followed by wet-etching using TMAH. No visible changes at the bonding interface and damage-free interconnect structures are observed after the thinning process. Both mechanical and electrical integrity of the bonded pairs are maintained after the three-step baseline thinning process, with electrical tests on wafers with multi-level copper interconnect test structures showing only a slight change after bonding and thinning. This thinning process works well for Si removal to an etch-stop layer, although present process uniformity is not adequate to thin bulk Si substrates. Other issues such as wafer breakage and edge chipping during Si thinning and their possible solutions are also addressed.


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