Surface flashover of dielectric materials used in pulsed power research

2007 ◽  
Author(s):  
M.P. Wilson ◽  
R.A. Fouracre ◽  
M.J. Given ◽  
S.J. MacGregor ◽  
I.V. Timoshkin ◽  
...  
Keyword(s):  
Dielectric Materials ◽  
Pulsed Power ◽  
Surface Flashover ◽  
Materials Used

Surface Flashover of Dielectric Materials Used in Pulsed Power Research

2007 ◽  
Author(s):  
M.P. Wilson ◽  
R.A. Fouracre ◽  
M.J. Given ◽  
S.J. MacGregor ◽  
I.V. Timoshkin ◽  
...  
Keyword(s):  
Dielectric Materials ◽  
Pulsed Power ◽  
Surface Flashover ◽  
Materials Used

scholarly journals Breathable Materials for Triboelectric Effect-Based Wearable Electronics

2018 ◽  
Vol 8 (12) ◽  
pp. 2485 ◽  
Author(s):  
Congju Li ◽  
Ran Cao ◽  
Xiuling Zhang
Keyword(s):  
Recent Progress ◽  
Dielectric Materials ◽  
Wearable Devices ◽  
Wearable Electronics ◽  
Practical Application ◽  
Metal Mesh ◽  
Frictional Materials ◽  
Nanofiber Membranes ◽  
Materials Used ◽  
Triboelectric Effect

Wearable electronics are believed to be the future of the next-generation electric devices. However, the comfort of current wearable devices is greatly limited due to the use of airtight materials, which may even lead to inflammation of the skin. Therefore, breathable, skin-friendly materials, are highly desired for wearable devices. Here, the recent progress of the breathable materials used to fabricate skin-friendly electronics is reviewed by taking triboelectric effect-based wearable electronics as a typical example. Fibers, yarns, textiles, and nanofiber membranes are the most popular dielectric materials that serve as frictional materials. Metal mesh, silver yarn, and conductive networks made up of nanomaterial are preferred as air-permissive electrodes. The breathable materials for skin-friendly wearable electronics summarized in this review provide valuable references for future fabrication of humanized wearable devices and hold great significance for the practical application of wearable devices.

LOW LOSS DIELECTRIC MATERIALS FOR HIGH FREQUENCY APPLICATIONS

2009 ◽  
Vol 23 (17) ◽  
pp. 3649-3654 ◽  
Author(s):  
MOHAN V. JACOB
Keyword(s):  
High Frequency ◽  
Room Temperature ◽  
Low Cost ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Transmission Losses ◽  
Low Loss ◽  
Microwave Characterization ◽  
Materials Used ◽  
Low Temperature Electronics

The microwave properties of some of the low cost materials which can be used in high frequency applications with low transmission losses are investigated in this paper. One of the most accurate microwave characterization techniques, Split Post Dielectric Resonator technique (SPDR) is used for the experimental investigation. The dielectric constants of the 3 materials scrutinized at room temperature and at 10K are 3.65, 2.42, 3.61 and 3.58, 2.48, 3.59 respectively. The corresponding loss tangent values are 0.00370, 0.0015, 0.0042 and 0.0025, 0.0009, 0.0025. The high frequency transmission losses are comparable with many of the conventional materials used in low temperature electronics and hence these materials could be implemented in such applications.

scholarly journals Reducing the Susceptibility of Lumped-Element KIDs to Two-Level System Effects

2020 ◽  
Vol 200 (5-6) ◽  
pp. 239-246
Author(s):  
A. L. Hornsby ◽  
P. S. Barry ◽  
S. M. Doyle ◽  
Q. Y. Tang ◽  
E. Shirokoff
Keyword(s):  
Dielectric Materials ◽  
Kinetic Inductance Detectors ◽  
Kinetic Inductance ◽  
Noise Power ◽  
Microwave Background ◽  
Superconducting Resonators ◽  
Lumped Element ◽  
Noise Power Spectral Density ◽  
Power Spectral ◽  
Materials Used

Abstract Arrays of lumped-element kinetic inductance detectors (LEKIDs) optically coupled through an antenna-coupled transmission line are a promising candidate for future cosmic microwave background experiments. However, the dielectric materials used for the microstrip architecture are known to degrade the performance of superconducting resonators. In this paper, we investigate the feasibility of microstrip coupling to a LEKID, focusing on a systematic study of the effect of depositing amorphous silicon nitride on a LEKID. The discrete and spatially separated inductive and capacitive regions of the LEKID allow us to vary the degree of dielectric coverage and determine the limitations of the microstrip coupling architecture. We show that by careful removal of dielectric from regions of high electric field in the capacitor, there is minimal degradation in dielectric loss tangent of a partially covered lumped-element resonator. We present the effects on the resonant frequency and noise power spectral density and, using the dark responsivity, provide an estimate for the resulting detector sensitivity.

Surface flashover of oil-immersed dielectric materials in uniform and non-uniform fields

2009 ◽  
Vol 16 (4) ◽  
pp. 1028-1036 ◽  
Author(s):  
M. Wilson ◽  
S. Macgregor ◽  
M. Given ◽  
I. Timoshkin ◽  
M.A. Sinclair ◽  
...  
Keyword(s):  
Dielectric Materials ◽  
Surface Flashover

Development of Laser and Photodefinable Toughened Benzocyclobutene Dielectric Materials for 3D-TSV Integration

2013 ◽  
Vol 2013 (1) ◽  
pp. 000067-000071
Author(s):  
Zidong Wang ◽  
Michael Gallagher ◽  
Kevin Wang ◽  
Elissei Iagodkine ◽  
Mark Oliver ◽  
...  
Keyword(s):  
Fracture Toughness ◽  
Moisture Absorption ◽  
Dielectric Materials ◽  
Copper Interconnects ◽  
Size Factor ◽  
Low Loss ◽  
Low Dielectric ◽  
Materials Used ◽  
Signal Routing ◽  
Stress Buffer

3D IC integration based on TSV technology has been recognized as a key enabler for next generation of electronic devices with reduced size factor and improved performances. The adoption of 3D-TSV technology also requires the development of innovative interconnect solutions that reduces the size of signal routing and therefore imposes new demands on dielectric materials used to isolate the copper interconnects. Benzocyclobutene polymers (Dow's CYCLOTENE™ Advanced Electronic Resins) have been used to isolate copper interconnects in packaging applications for more than 20 years, due to a number of good attributes of the BCB polymer including low copper drift rate, low dielectric constant and low loss, low moisture absorption and proven reliability. However, the low fracture toughness and low elongation of BCB polymer has limited its use in stress buffer applications due to solder bump failure. Here we report the development of new laser and photodefinable toughened benzocyclobutene (BCB) dielectric materials that have following improved properties and benefits over commercial materials including: 1) Higher elongation to break at 25%, 2) Higher fracture toughness, 3) Improved lithographic performance, < 8μm minimal size feature, 4) Better stability, no change in Eo after 30 days at room temperature. The patterning and integration of these toughened benzocyclobutene materials and the processing conditions are also discussed. We believe this toughened BCB material will find wide applications as a stress buffer layer in 3-D IC.

Metrology Issues in Cu-Low-K Chemical Mechanical Planarization

2002 ◽  
Vol 750 ◽  
Author(s):  
Parshuram B. Zantye ◽  
Arun K. Sikder ◽  
Swetha Thagella ◽  
Nivedita Gulati ◽  
Ashok Kumar
Keyword(s):  
Tribological Properties ◽  
Surface Characterization ◽  
Chemical Mechanical Planarization ◽  
Dielectric Materials ◽  
Successful Implementation ◽  
Post Process ◽  
Damascene Process ◽  
Reduced Modulus ◽  
Materials Used ◽  
Cu Cmp

ABSTRACTUltra low-k materials used in Cu damascene process are inherently soft and weak in nature; hence the evaluation of tribological properties of these materials is an issue of paramount importance in the field of semiconductor fabrication. Chemical Mechanical Polishing (CMP) of these films is a major challenge due to their reduced modulus and cohesive strength. The objective of this research is to develop a strong understanding of the tribological properties of Cu ultra low-k dielectric materials for successful implementation in the semiconductor devices. The Cu ultra low-k systems are polished at different conditions of load and platen rotation and their polishing behavior is compared with the standard Cu-SiO2 system. The polishing behavior of Cu and the barrier Ta material is studied in order to effectively detect the end point of the Cu CMP process. Delamination studies, post process surface characterization using scanning electron microscopy and the reliability issues of these materials also come within the scope of this study.

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