Pressure sensor development using hard anodized aluminum diaphragm and sputtered Pt-W thin film strain sensors

Author(s):  
A. Rajendra ◽  
B.J. Parmar ◽  
A.K. Sharma ◽  
H. Bhojraj ◽  
M.M. Nayak ◽  
...  
Polymers ◽  
2020 ◽  
Vol 12 (9) ◽  
pp. 2133
Author(s):  
Xue Li ◽  
Jun-Yi Sun ◽  
Bin-Bin Shi ◽  
Zhi-Hang Zhao ◽  
Xiao-Ting He

This study is devoted to the design of an elastic polymer thin film-based capacitive wind-pressure sensor to meet the anticipated use for real-time monitoring of structural wind pressure in civil engineering. This sensor is composed of four basic units: lateral elastic deflection unit of a wind-driven circular polymer thin film, parallel plate capacitor with a movable circular electrode plate, spring-driven return unit of the movable electrode plate, and dielectric materials between electrode plates. The capacitance of the capacitor varies with the parallel move of the movable electrode plate which is first driven by the lateral elastic deflection of the wind-driven film and then is, after the wind pressure is reduced or eliminated, returned quickly by the drive springs. The closed-form solution for the contact problem between the wind-driven thin film and the spring-driven movable electrode plate is presented, and its reliability is proved by the experiment conducted. The numerical examples conducted show that it is workable that by using the numerical calibration based on the presented closed-form solution the proposed sensor is designed into a nonlinear sensor with larger pressure-monitoring range and faster response speed than the linear sensor usually based on experimental calibration.


2009 ◽  
Vol 1222 ◽  
Author(s):  
Xiaoyang Li ◽  
Timothy Reissman ◽  
Fan Yu ◽  
Edwin C. Kan

AbstractA low-range pressure sensor (0-100kPa) based on the P(VDF-TrFE) piezoelectric thin film is proposed, where the long-term drift is eliminated by operating near the piezoelectric resonance. The pressure sensor is designed for blood pressure and tissue swelling pressure monitoring. The poled 50μm±1μm P(VDF-TrFE) copolymer film is used as the sensing element, with all fabrication and assembly materials biocompatible. A modified Butterworth-Van Dyke (BVD) [1] equivalent circuit model is used to characterize the sensor behavior. The pressure sensor exhibits negligible drift in weeks of operation. The device shows a sensitivity of 0.038MHz/kPa resonance frequency shift under stress, which leads to a maximum readout change of 1.1%/kPa in the present setup.


2013 ◽  
Vol 771 ◽  
pp. 159-162
Author(s):  
Li Feng Qi ◽  
Zhi Min Liu ◽  
Xing Ye Xu ◽  
Guan Zhong Chen ◽  
Xue Qing

The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.


2011 ◽  
Vol 80-81 ◽  
pp. 693-697
Author(s):  
Chang Hong Ji ◽  
Bin Zhen Zhang ◽  
Jian Zhang ◽  
Xiang Hong Li ◽  
Jian Lin Liu

In order to measure the pressure in the ultra-low temperature condition, the structure of ultra-low temperature piezoresistive pressure sensor is designed. Polysilicon nanometer thin film is used as a varistor according to its temperature and piezoresistive characteristics. The effect of the dimensions of silicon elastic membrane for the sensor sensitivity and the strain dimensions of the elastic membrane are analyzed, then layout position of resistances is arranged. The package structure of pressure sensor is designed. Meanwhile, a low-temperature sensor is designed to compensate the temperature influence to the pressure sensor.


Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1970 ◽  
Author(s):  
Donghyeon Ryu ◽  
Alfred Mongare

In this study, a flexible strain sensor is devised using corrugated bilayer thin films consisting of poly(3-hexylthiophene) (P3HT) and poly(3,4-ethylenedioxythiophene)-polystyrene(sulfonate) (PEDOT:PSS). In previous studies, the P3HT-based photoactive non-corrugated thin film was shown to generate direct current (DC) under broadband light, and the generated DC voltage varied with applied tensile strain. Yet, the mechanical resiliency and strain sensing range of the P3HT-based thin film strain sensor were limited due to brittle non-corrugated thin film constituents. To address this issue, it is aimed to design a mechanically resilient strain sensor using corrugated thin film constituents. Buckling is induced to form corrugation in the thin films by applying pre-strain to the substrate, where the thin films are deposited, and releasing the pre-strain afterwards. It is known that corrugated thin film constituents exhibit different optical and electronic properties from non-corrugated ones. Therefore, to design the flexible strain sensor, it was studied to understand how the applied pre-strain and thickness of the PEDOT:PSS conductive thin film affects the optical and electrical properties. In addition, strain effect was investigated on the optical and electrical properties of the corrugated thin film constituents. Finally, flexible strain sensors are fabricated by following the design guideline, which is suggested from the studies on the corrugated thin film constituents, and the DC voltage strain sensing capability of the flexible strain sensors was validated. As a result, the flexible strain sensor exhibited a tensile strain sensing range up to 5% at a frequency up to 15 Hz with a maximum gauge factor ~7.


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