scholarly journals TCAD Modeling of Cryogenic nMOSFET ON-State Current and Subthreshold Slope

2021 ◽  
Author(s):  
Prabjot Dhillon ◽  
Nguyen Cong Dao ◽  
Philip H. W. Leong ◽  
Hiu Yung Wong
Keyword(s):  
Subthreshold Slope

Physics of Below Threshold Current Distribution in a-Si:H TFTs

1996 ◽  
Vol 424 ◽  
Author(s):  
H. C. Slade ◽  
M. S. Shur ◽  
S. C. Deane ◽  
M. Hack
Keyword(s):  
Amorphous Silicon ◽  
Threshold Current ◽  
Gate Insulator ◽  
Subthreshold Slope ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Spice Model ◽  
Active Layers ◽  
Insulator Interface ◽  
Current Activation

AbstractWe have examined the material properties and operation of bottom-gate amorphous silicon thin film transistors (TFTs) using temperature measurements of the subthreshold current. From the derivative of current activation energy with respect to gate bias, we have deduced information about the density of states for several different transistor types. We have demonstrated that, in TFTs with thin active layers and top nitride passivation, the current conduction channel moves from the gate insulator interface to the passivation insulator interface as the transistor switches off. Our 2D simulations clarify these experimental results. We have examined the effect of bias stress on the transistors and analyzed the resulting reduction in the subthreshold slope. Based on these results, we have extended our analytic amorphous silicon TFI SPICE model to include the effect of bias stress.

Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope

2007 ◽  
Vol 28 (3) ◽  
pp. 217-219 ◽  
Author(s):  
Meishoku Masahara ◽  
Radu Surdeanu ◽  
Liesbeth Witters ◽  
Gerben Doornbos ◽  
Viet H. Nguyen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Subthreshold Slope ◽  
Gate Oxide Thickness

Quantitative Assessment of the Effects of Strain on Future III-V Digital Applications

2012 ◽  
Vol 9 (1) ◽  
pp. 37-42
Author(s):  
Umesh P. Gomes ◽  
Kumud Ranjan ◽  
Subhra Chowdhury ◽  
Palash Das ◽  
Servin Rathi ◽  
...  
Keyword(s):  
Band Structure ◽  
Leakage Current ◽  
Quantitative Assessment ◽  
Compressive Strain ◽  
Design Parameters ◽  
Subthreshold Slope ◽  
Gate Leakage Current ◽  
Active Device ◽  
Strain Effects ◽  
Induced Changes

In this paper the strain effects on the performance and reliability of future digital III-V device are discussed. Strain is incorporated in the device during fabrication, packaging, and operation. A high amount of strain can introduce defects and cracks in the epilayer. The band structure of the active device region is also altered due to strain. These strain induced changes determine performance, reliability, and lifetime of the device. Therefore, it is necessary to consider strain effects while designing a device for a particular application. Here, compressive-strain-induced changes are used as design parameters and their impact on the logic performance of the device is studied. It is interpreted that the design significantly decreases the gate leakage current and improves the subthreshold slope.

Substrate impact on threshold voltage and subthreshold slope of sub-32nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel

2010 ◽  
Vol 54 (2) ◽  
pp. 213-219 ◽  
Author(s):  
S. Burignat ◽  
D. Flandre ◽  
M.K. Md Arshad ◽  
V. Kilchytska ◽  
F. Andrieu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Subthreshold Slope ◽  
Buried Oxide

scholarly journals Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Sheng-Po Chang ◽  
San-Syong Shih
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Excellent Performance ◽  
Current Ratio ◽  
Indium Zinc Oxide ◽  
Sputtering Power

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO) thin film transistors (TFTs). Co-sputtering-processedα-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition ofα-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE), carrier concentration, and subthreshold swing (S) of the device. Our results indicated that we could successfully and easily fabricateα-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processedα-HfIZO TFTs were fabricated with an on/off current ratio of~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

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