Modeling subthreshold leakage and thermal stability in a production life test environment

Author(s):  
K. Black ◽  
K. Kelly ◽  
N. Wright
2002 ◽  
Vol 17 (1) ◽  
pp. 60-64 ◽  
Author(s):  
Shin-Ichi Yamaura ◽  
Keita Isogai ◽  
Hisamichi Kimura ◽  
Akihisa Inoue

We have examined electrochemical properties and thermal stability of the amorphous Mg67Ni28Pd5 alloy produced by melt-spinning subjected to electrochemical hydrogen charge. In the cyclic life test, the discharge capacity of the alloy increases significantly with increasing cycle number and reaches 411 mA h/g at the 15th cycle. Thehydrogen-absorbed amorphous alloy crystallizes through two stages of primarycrystallization of Mg2Ni, followed by precipitation of Mg2NiH4 at the second stage.The completed crystallization temperature of the hydrogen-absorbed alloy increases by 65 K as compared with the as-solidified one. It is thus concluded that stability of theMg-based amorphous alloy against crystallization increases by hydrogen absorption.


Author(s):  
Athanasios Krontiris ◽  
Sophia Pfeffer ◽  
Till Neukamp ◽  
Ingo Jeromin ◽  
Matthias Pfeffer

Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.


Author(s):  
Wang Zheng-fang ◽  
Z.F. Wang

The main purpose of this study highlights on the evaluation of chloride SCC resistance of the material,duplex stainless steel,OOCr18Ni5Mo3Si2 (18-5Mo) and its welded coarse grained zone(CGZ).18-5Mo is a dual phases (A+F) stainless steel with yield strength:512N/mm2 .The proportion of secondary Phase(A phase) accounts for 30-35% of the total with fine grained and homogeneously distributed A and F phases(Fig.1).After being welded by a specific welding thermal cycle to the material,i.e. Tmax=1350°C and t8/5=20s,microstructure may change from fine grained morphology to coarse grained morphology and from homogeneously distributed of A phase to a concentration of A phase(Fig.2).Meanwhile,the proportion of A phase reduced from 35% to 5-10°o.For this reason it is known as welded coarse grained zone(CGZ).In association with difference of microstructure between base metal and welded CGZ,so chloride SCC resistance also differ from each other.Test procedures:Constant load tensile test(CLTT) were performed for recording Esce-t curve by which corrosion cracking growth can be described, tf,fractured time,can also be recorded by the test which is taken as a electrochemical behavior and mechanical property for SCC resistance evaluation. Test environment:143°C boiling 42%MgCl2 solution is used.Besides, micro analysis were conducted with light microscopy(LM),SEM,TEM,and Auger energy spectrum(AES) so as to reveal the correlation between the data generated by the CLTT results and micro analysis.


2020 ◽  
Author(s):  
Feng Xiao ◽  
Bin Yao ◽  
Pavankumar Challa Sasi ◽  
Svetlana Golovko ◽  
Dana Soli ◽  
...  

2020 ◽  
Vol 36 (4) ◽  
pp. 554-562
Author(s):  
Alica Thissen ◽  
Frank M. Spinath ◽  
Nicolas Becker

Abstract. The cube construction task represents a novel format in the assessment of spatial ability through mental cube rotation tasks. Instead of selecting the correct answer from several response options, respondents construct their own response in a computerized test environment, leading to a higher demand for spatial ability. In the present study with a sample of 146 German high-school students, we tested an approach to manipulate the item difficulties in order to create items with a greater difficulty range. Furthermore, we compared the cube task in a distractor-free and a distractor-based version while the item stems were held identical. The average item difficulty of the distractor-free format was significantly higher than in the distractor-based format ( M = 0.27 vs. M = 0.46) and the distractor-free format showed a broader range of item difficulties (.02 ≤  pi ≤ .95 vs. .37 ≤  pi ≤ .63). The analyses of the test results also showed that the distractor-free format had a significantly higher correlation with a broad intelligence test ( r = .57 vs. r = .17). Reasons for the higher convergent validity of the distractor-free format (prevention of response elimination strategies and the broader range of item difficulties) and further research possibilities are discussed.


2001 ◽  
Vol 27 (4) ◽  
pp. 329-344 ◽  
Author(s):  
John M. Pearce ◽  
Jasper Ward-Robinson ◽  
Mark Good ◽  
Clayton Fussell ◽  
Aydan Aydin

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