Why Is Oxide-Trap Charge-Pumping Method Appropriate for Radiation-Induced Trap Depiction in MOSFET?

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2009.2013637 ◽

2009 ◽

Vol 9 (2) ◽

pp. 222-230 ◽

Author(s):

B. Djezzar ◽

H. Tahi ◽

A. Mokrani

Keyword(s):

Trap Charge ◽

Charge Pumping ◽

Radiation Induced ◽

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Why is oxide-trap charge-pumping (OTCP) method appropriate for extracting the radiation-induced traps in mosfet?

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173349 ◽

2009 ◽

Author(s):

Boualem Djezzar ◽

Hakim Tahi ◽

Arezki Mokrani

Keyword(s):

Trap Charge ◽

Charge Pumping ◽

Radiation Induced ◽

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Using Oxide-Trap Charge-Pumping method in radiation reliability analysis of short lightly doped drain transistor

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994552 ◽

2009 ◽

Author(s):

Boualem Djezzar ◽

Hakim Tahi

Keyword(s):

Reliability Analysis ◽

Trap Charge ◽

Charge Pumping ◽

Lightly Doped Drain

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Oxide-trap charge-pumping for radiation reliability issue in MOS devices

2009 4th International Conference on Design & Technology of Integrated Systems in Nanoscal Era ◽

10.1109/dtis.2009.4938073 ◽

2009 ◽

Author(s):

Boualem Djezzar ◽

Hakim Tahi ◽

Arezki Mokrani

Keyword(s):

Trap Charge ◽

Charge Pumping ◽

Mos Devices ◽

Reliability Issue

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New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)

IEEE Transactions on Nuclear Science ◽

10.1109/23.211421 ◽

1992 ◽

Vol 39 (6) ◽

pp. 2192-2203 ◽

Author(s):

D.M. Fleetwood ◽

S.L. Miller ◽

R.A. Reber ◽

P.J. McWhorter ◽

P.S. Winokur ◽

...

Keyword(s):

Current Measurement ◽

Thermally Stimulated Current ◽

Mos Capacitors ◽

Trap Charge ◽

Measurement And Analysis ◽

Radiation Induced ◽

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Using Oxide-Trap Charge-Pumping Method in Radiation-Reliability Analysis of Short Lightly Doped Drain Transistor

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2009.2030414 ◽

2010 ◽

Vol 10 (1) ◽

pp. 18-25 ◽

Author(s):

B. Djezzar ◽

H. Tahi

Keyword(s):

Reliability Analysis ◽

Trap Charge ◽

Charge Pumping ◽

Lightly Doped Drain

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DC Exploration of Oxide Trap Charge Effects on Electrically Doped Nano Ribbon FET

2021 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic50843.2021.9455924 ◽

2021 ◽

Author(s):

Annada Shankar Lenka ◽

Prasanna Kumar Sahu ◽

Sayan Bagchi

Keyword(s):

Charge Effects ◽

Trap Charge ◽

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A high-sensitive digital photosensor using MOS interface-trap charge pumping

IEICE Electronics Express ◽

10.1587/elex.1.556 ◽

2004 ◽

Vol 1 (18) ◽

pp. 556-561

Author(s):

Akihiro Uehara ◽

Keiichiro Kagawa ◽

Takashi Tokuda ◽

Jun Ohta ◽

Masahiro Nunoshita

Keyword(s):

Interface Trap ◽

Trap Charge ◽

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A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part II (low frequencies)

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2004.832547 ◽

2004 ◽

Vol 51 (4) ◽

pp. 1732-1736 ◽

Author(s):

B. Djezzar ◽

A. Smatti ◽

S. Oussalah

Keyword(s):

Extraction Method ◽

Low Frequencies ◽

Charge Pumping ◽

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Extraction of slow oxide trap concentration profiles in metal–oxide–semiconductor transistors using the charge pumping method

Journal of Applied Physics ◽

10.1063/1.361786 ◽

1996 ◽

Vol 79 (8) ◽

pp. 4187 ◽

Author(s):

Y. Maneglia ◽

D. Bauza

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Concentration Profiles ◽

Trap Concentration ◽

Charge Pumping ◽

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Evolution of capture cross-section of radiation-induced interface traps in MOSFETs as studied by a rapid charge pumping technique

IEEE Transactions on Nuclear Science ◽

10.1109/23.211416 ◽

1992 ◽

Vol 39 (6) ◽

pp. 2152-2157 ◽

Author(s):

W. Chen ◽

A. Balasinski ◽

T.-P. Ma

Keyword(s):

Cross Section ◽

Capture Cross Section ◽

Interface Traps ◽

Capture Cross ◽

Charge Pumping ◽

Radiation Induced

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