New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)

1992 ◽  
Vol 39 (6) ◽  
pp. 2192-2203 ◽  
Author(s):  
D.M. Fleetwood ◽  
S.L. Miller ◽  
R.A. Reber ◽  
P.J. McWhorter ◽  
P.S. Winokur ◽  
...  
Keyword(s):  
Current Measurement ◽  
Thermally Stimulated Current ◽  
Mos Capacitors ◽  
Trap Charge ◽  
Measurement And Analysis ◽  
Radiation Induced ◽  
Oxide Trap

Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs

2006 ◽  
Vol 527-529 ◽  
pp. 1063-1066 ◽  
Author(s):  
Ayayi Claude Ahyi ◽  
S.R. Wang ◽  
John R. Williams
Keyword(s):  
Field Effect ◽  
Gamma Dose ◽  
Interface Traps ◽  
Valence Band Edge ◽  
Field Effect Mobility ◽  
Irradiation Effects ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Radiation Induced ◽  
Radiation Tolerant

The effects of gamma radiation on field effect mobility and threshold voltage have been studied for lateral n-channel 4H-SiC MOSFETs passivated with nitric oxide. MOS capacitors (n and p) and n-channel lateral MOSFETs were irradiated unbiased (floating contacts) for a total gamma dose of 6.8Mrad (Si). The MOS capacitors were used to study the radiation-induced interface traps and fixed oxide charge that affect the performance of the MOSFETs. Radiationinduced interface traps were observed near the SiC valence band edge and just above mid-gap, and field effect channel mobility was reduced by 18-20% following irradiation. Even so, 4HMOSFETs appear to be more radiation tolerant than Si devices.

Oxide trap states versus gas sensing in SiC-MOS capacitors – The effect of N- and P- based post oxidation processes

2017 ◽  
Vol 245 ◽  
pp. 911-922 ◽  
Author(s):  
Razvan Pascu ◽  
Florea Craciunoiu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Mihaela Kusko
Keyword(s):  
Gas Sensing ◽  
Trap States ◽  
Mos Capacitors ◽  
Oxidation Processes ◽  
Oxide Trap

Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation

2010 ◽  
Vol 645-648 ◽  
pp. 469-472
Author(s):  
Marko J. Tadjer ◽  
Karl D. Hobart ◽  
Robert E. Stahlbush ◽  
Patrick J. McMarr ◽  
Hap L. Hughes ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Trap Density ◽  
Thermally Stimulated Current ◽  
Mos Capacitors ◽  
Oxide Charge ◽  
Mos Devices ◽  
Gamma Ray Irradiation

Thermally stimulated current (TSC) measurements on epitaxial and implanted 4H-SiC MOS capacitors are presented. The effect of gamma ray irradiation on the TSC spectra of epitaxial 4H-SiC MOSCAP devices is discussed. On non-irradiated samples, two TSC peaks are observed near 55 K and 80 K. Due to the generated oxide charge during irradiation, the 80 K emission split into two constituent peaks. These have been attributed to hole traps and Al acceptors.

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