Numerical Study of Data Retention Due to Direct Tunneling for Nonvolatile Memory Cell

2005 ◽  
Vol 52 (5) ◽  
pp. 955-961 ◽  
Author(s):  
H. Watanabe ◽  
T. Ishihara ◽  
Y. Matsunaga ◽  
K. Matsuzawa ◽  
D. Matsushita ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Numerical Study ◽  
Memory Cell ◽  
Data Retention ◽  
Direct Tunneling

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

2012 ◽  
Vol 52 (8) ◽  
pp. 1627-1631 ◽  
Author(s):  
Jer-Chyi Wang ◽  
Chih-Ting Lin ◽  
Chi-Hsien Huang ◽  
Chao-Sung Lai ◽  
Chin-Hsiang Liao
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Charge Storage ◽  
Data Retention ◽  
Retention Characteristics

scholarly journals High-performance Ni/Yb2O3/TaN Programmable Memory Cell for Nonvolatile Memory Applications

2012 ◽  
pp. 74-77
Author(s):  
Somnath Mondal ◽  
Fa-Hsyang Chen ◽  
Tung-Ming Pan
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
High Performance ◽  
Sandwich Structure ◽  
Oxygen Vacancies ◽  
Memory Cell ◽  
Switching Behavior ◽  
Electrical Performance ◽  
Data Retention ◽  
Memory Applications

Resistive switching in Ni/Yb2O3/TaN programmable memory cells was investigated. We proposed a rearrangement of oxygen vacancies under electric field plays role in resistive switching. Under negative bias, oxygen vacancies or other metallic defects migrate through Yb2O3 oxide and SET occurs. A reproducible resistance switching behavior was observed with high resistance ratio of about 105 with excellent data retention, and good immunity to read disturbance, are also revealed. In particular, the simple sandwich structure and excellent electrical performance of the memory cell making them ideal for the basis for highspeed, high-density, nonvolatile memory applications.

The dual role of PZT in metal-PZT-Al2O3 structure for nonvolatile memory cell

2010 ◽  
Author(s):  
Sharon Cui ◽  
Dongseog Eun ◽  
Bozidar Marinkovic ◽  
Cheng-Yi Peng ◽  
Xiao Pan ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Dual Role

Voltage-readable nonvolatile memory cell with programmable ferroelectric multistates in organic inverter configuration

2013 ◽  
Vol 14 (5) ◽  
pp. 1231-1236 ◽  
Author(s):  
Min-Hoi Kim ◽  
Gyu Jeong Lee ◽  
Chang-Min Keum ◽  
Sin-Doo Lee
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Organic Inverter

Intrinsic Mismatch Between Floating-Gate Nonvolatile Memory Cell and Equivalent Transistor

2007 ◽  
Vol 28 (5) ◽  
pp. 440-442 ◽  
Author(s):  
Russell Duane ◽  
Quentin Rafhay ◽  
M. Florian Beug ◽  
Michiel van Duuren
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Floating Gate
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