High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

2006 ◽  
Vol 527-529 ◽  
pp. 1437-1440 ◽  
Author(s):  
Sumi Krishnaswami ◽  
Anant K. Agarwal ◽  
Jim Richmond ◽  
Craig Capell ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Linear Region ◽  
Collector Voltage ◽  
Avalanche Behavior ◽  
Dc Current ◽  
Recent Demonstration

This paper summarizes the recent demonstration of 3200 V, 10 A BJT devices with a high common emitter current gain of 44 in the linear region, and a specific on-resistance of 8.1 mΩ- cm2 (10 A at 0.90 V with a base current of 350 mA and an active area of 0.09 cm2). The onresistance increases to 40 mΩ-cm2 at 350°C, while the DC current gain decreases to 30. A sharp avalanche behavior was observed with a leakage current of 10 μA at a collector voltage of 3.2 kV.

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 1025-1028 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Robert Callanan ◽  
Anant K. Agarwal ◽  
Albert A. Burk ◽  
Michael J. O'Loughlin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Voltage Drop ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Forward Voltage ◽  
Collector Voltage ◽  
Forward Voltage Drop ◽  
Chip Size ◽  
Dc Current

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 10 (4) ◽  
pp. 138-143 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200°C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, ROHM, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200°C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

2011 ◽  
Vol 679-680 ◽  
pp. 710-713
Author(s):  
Jian Hui Zhang ◽  
Jian Hui Zhao ◽  
Xiao Hui Wang ◽  
Xue Qing Li ◽  
Leonid Fursin ◽  
...  
Keyword(s):  
High Voltage ◽  
Active Area ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Edge Termination ◽  
Direct Edge ◽  
Dc Current

This paper reports our recent study on 4H-SiC power bipolar junction transistors (BJTs) with deep mesa edge termination. 1200 V – 10 A 4H-SiC power BJTs with an active area of 4.64 mm2 have been demonstrated using deep mesa for direct edge termination and device isolation. The BJT’s DC current gain () is about 37, and the specific on-resistance (RSP-ON) is ~ 3.0 m-cm2. The BJT fabrication is substantially simplified and an overall 10% reduction in the device area is achieved compared to the multi-step JTE-based SiC-BJTs.

scholarly journals A New Low Cost Current Measurement Circuit with Temperature Compensation

2020 ◽  
Vol 15 (3) ◽  
pp. 1-5
Author(s):  
Antonio Carlos da Costa Telles ◽  
Jair Lins de Emeri ◽  
Saulo Finco ◽  
Luis Eduardo Seixas
Keyword(s):  
Temperature Compensation ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Electrical Characterization ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Exponential Relationship ◽  
Electrical Currents ◽  
Commercial Off The Shelf

The electrical characterization of semiconductors devices, when submitted to ionizing radiation should be done in a large range of currents; however, the instrumentation with this ability is very expensive. This work proposes a low-cost circuit using commercial off-the-shelf components (COTS) that enables the measurement of electrical currents in the order of pA range. The circuit presents an output current that is an amplified version of the current to be measured, using the exponential relationship between currents and voltages in Bipolar Junction Transistors (BJTs) and Metal Oxide Silicon Field Effect Transistors (MOSFETs) when operating in the weak inversion region. Furthermore, a block was introduced in order to compensate the gain’s temperature dependence. The results showed that the operating range for the current that will be measured was more than seven decades using BJTs and five decades by using MOSFETs with a high linearity. The circuit version using MOSFETs was able to measure currents as low as 100 fA. The current gain has also good linearity for over five decades. This circuit has a stable behavior for the range of 20 °C to 40 °C, because of the temperature compensation block.

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000082-000087 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200 °C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, Rohm, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200 °C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications

2013 ◽  
Vol 740-742 ◽  
pp. 966-969 ◽  
Author(s):  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Low Voltage ◽  
Current Gain ◽  
A Current

4H-SiC bipolar Darlington transistors (D-BJTs) for low voltage applications have been fabricated, simulated and characterized up to 300 °C, where they exhibit a current gain of 460. The influence on D-BJT current gain of relative current capability of driver and output BJTs has been investigated, and the collector resistance has been identified as the main limitation for the D-BJTs.

1200V 20A SiC BJTs operating at 250°C

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000091-000097
Author(s):  
Anders Lindgren ◽  
Martin Domeij ◽  
Tomas Hjort
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Qualitative Agreement ◽  
Series Resistance ◽  
Switching Behavior ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Spice Model ◽  
High Temperature Operation ◽  
Made In

Silicon carbide (SiC) bipolar junction transistors (BJTs) are normally-off devices which can block high voltages at high temperature operation. The SiC BJTs can be switched very fast with low losses [2] compared to BJT's made in silicon (Si), and can be operated at temperatures up to and above 250 °C. Vertical 1200V 20A rated high temperature capable NPN SiC BJTs were fabricated and packaged in a high-temperature capable metal package of the type TO-258. The transistors were characterized both statically and in terms of switching. A SPICE model was developed for the transistors, including the parasitic capacitances of the internal pn-junctions, as well as temperature dependence of the current gain and the collector series resistance. Switching measurements were performed showing VCE voltage rise- and fall-times in the range of 20–30 ns. The switching behavior is in qualitative agreement with SPICE simulations.

1200 V 6 A High Temperature SiC BJTs

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000160-000166 ◽  
Author(s):  
Anders Lindgren ◽  
Martin Domeij
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Qualitative Agreement ◽  
Series Resistance ◽  
Switching Behavior ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Spice Model ◽  
High Temperature Operation ◽  
Made In

Silicon carbide (SiC) bipolar junction transistors (BJTs) are normally-off devices which can block high voltages at high temperature operation. The SiC BJTs can be switched very fast with low losses [2] compared to BJT's made in silicon (Si), and can be operated at temperatures up to and above 250 °C. Vertical 1200V 6A rated NPN SiC BJTs were fabricated and packaged in a high-temperature capable metal package of the type TO-258. The transistors were characterized both statically and in terms of switching. A SPICE model was developed for the transistors, including the parasitic capacitances of the internal pn-junctions, as well as temperature dependence of the current gain and the collector series resistance. Switching measurements were performed showing VCE voltage rise- and fall-times in the range of 20 ns. The switching behavior is in qualitative agreement with SPICE simulations.

Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

2008 ◽  
Vol 55 (8) ◽  
pp. 1899-1906 ◽  
Author(s):  
Jianhui Zhang ◽  
Xueqing Li ◽  
Petre Alexandrov ◽  
Leonid Fursin ◽  
Xiaohui Wang ◽  
...  
Keyword(s):  
Current Gain ◽  
Bipolar Junction Transistors ◽  
High Current ◽  
Fabrication And Characterization

scholarly journals A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
John T Torvik ◽  
M. Leksono ◽  
J. I. Pankove ◽  
B. Van Zeghbroeck
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Device Structure ◽  
Fabrication And Characterization ◽  
Dc Current

We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC substrates. Selective GaN growth through a SiO2 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor operation with a modest dc current gain of 15 at room temperature and 3 at 300°C.

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