Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

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Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽

10.1039/d1nr02911h ◽

2021 ◽

Author(s):

Keonwon Beom ◽

Jimin Han ◽

Hyun-Mi Kim ◽

Tae-Sik Yoon

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Hafnium Oxide ◽

Synaptic Weight ◽

Drain Current ◽

Gate Insulator ◽

Channel Layer ◽

Indium Zinc Oxide ◽

Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

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Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

Journal of Applied Physics ◽

10.1063/1.4831665 ◽

2013 ◽

Vol 114 (18) ◽

pp. 184502 ◽

Cited By ~ 25

Author(s):

A. Tsormpatzoglou ◽

N. A. Hastas ◽

N. Choi ◽

F. Mahmoudabadi ◽

M. K. Hatalis ◽

...

Keyword(s):

Thin Film ◽

Surface Potential ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Amorphous Ingazno

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Analytical Treatment of Field-Effect Conduction in Polysilicon thin film Transistors

MRS Proceedings ◽

10.1557/proc-471-149 ◽

1997 ◽

Vol 471 ◽

Cited By ~ 1

Author(s):

W. Eccleston

Keyword(s):

Thin Film ◽

Grain Size ◽

Thin Film Transistors ◽

Field Effect ◽

Drain Current ◽

High Current ◽

Analytical Treatment ◽

Channel Mobility ◽

Current Region ◽

The Relationship

ABSTRACTThe drift of electrons in the channels of Thin Film Transistors is analysed for discrete grains separated by grain boundaries containing amorphous silicon. The model provides the relationship channel mobility and grain size. The relationship between drain current and the terminal voltages is also predicted. The model relates to normal high current region of transistor operation.

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1/f Noise Behavior in Pentacene Organic Thin Film Transistors

MRS Proceedings ◽

10.1557/proc-598-bb11.54 ◽

1999 ◽

Vol 598 ◽

Author(s):

P. V. Necliudov ◽

D. J. Gundlach ◽

T. N. Jackson ◽

S. L. Rumyantsev ◽

M. S. Shur

Keyword(s):

Thin Film ◽

Conducting Polymers ◽

Thin Film Transistors ◽

Low Frequency ◽

Drain Current ◽

Frequency Noise ◽

Organic Thin Film ◽

Amorphous Si ◽

Parameter Values ◽

Device Noise

ABSTRACTWe studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations SI/I2 had a form of 1/f noise in the measured frequency range 1Hz - 3.5kHz.Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs.To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

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