Optimal Design of Broadband Microwave Baluns Using Single-Layer Planar Circuit Technology

2014 ◽  
Vol 62 (5) ◽  
pp. 1183-1191 ◽  
Author(s):  
Tim Canning ◽  
J. R. Powell ◽  
Steve C. Cripps
Keyword(s):  
Optimal Design ◽  
Single Layer ◽  
Planar Circuit ◽  
Circuit Technology

Band-pass filtering Gysel power divider with inherent DC-block function and high all-frequency isolation

2016 ◽  
Vol 9 (5) ◽  
pp. 1017-1021 ◽  
Author(s):  
Yongle Wu ◽  
Lingxiao Jiao ◽  
Jiayu Wang ◽  
Weimin Wang ◽  
Yuanan Liu
Keyword(s):  
High Power ◽  
High Selectivity ◽  
Single Layer ◽  
Power Divider ◽  
Band Pass ◽  
Function Integration ◽  
Planar Circuit ◽  
Circuit Technology

A novel small-size filtering power divider (PD) featured four-function integration is proposed. These four integrated functions are high-selectivity filtering, inherent DC block, high all-frequency isolation, and high-power applications. Using single-layer planar circuit technology, this proposed PD can be implemented easily. The measured results of a prototype show that it can operate at 2 GHz with a −10 dB matching bandwidth of 6% and all-frequency −15 dB isolation.

Electromagnetic bandgap structures in planar circuit technology

2004 ◽  
Author(s):  
F. Falcone ◽  
F. Martin ◽  
J. Bonache ◽  
T. Lopetegi ◽  
M.A. Gomez-Laso ◽  
...  
Keyword(s):  
Electromagnetic Bandgap ◽  
Planar Circuit ◽  
Circuit Technology

Compressive-Post Packaging of Double-Sided Die

2014 ◽  
Vol 2014 (1) ◽  
pp. 000031-000036
Author(s):  
Woochan Kim ◽  
Jia-Woei Wu ◽  
Bill Alexander ◽  
Sauvik Chowdhury ◽  
Collin Hitchcock ◽  
...  
Keyword(s):  
Finite Element ◽  
Optimal Design ◽  
Mechanical Stress ◽  
Finite Element Simulation ◽  
Layer Structure ◽  
Thermal Characteristics ◽  
Single Layer ◽  
Element Simulation

Double-sided module exhibits electrical and thermal characteristics that are superior to wire-bonded counterpart. Such structure, however, induces more than twice the thermo-mechanical stress in a single-layer structure. Compressive posts have been developed and integrated into the double-sided module to reduce the stress to a level acceptable by silicon dice. For a 14 mm x 21 mm module carrying 6.6 mm x 6.6 mm die, finite-element simulation suggested an optimal design having four posts located 1 mm from the die; the z-direction stress at the chip was reduced from 17 MPa to 0.6 MPa.

Analysis and Design of a Novel High-Power W-Band Spatial Multilayer Doubler

2011 ◽  
Vol 130-134 ◽  
pp. 529-533
Author(s):  
Jian Qin Deng ◽  
Wan Shun Jiang ◽  
Yue Min Ning
Keyword(s):  
Rectangular Waveguide ◽  
Fdtd Method ◽  
Single Layer ◽  
Input Power ◽  
Analysis And Design ◽  
Passive Circuits ◽  
W Band ◽  
Rectangular Waveguides ◽  
Planar Circuit ◽  
Harmonic Power

A novel spatial multilayer doubler is proposed in the paper. It is designed by tray approach in rectangular waveguide. The doubler consists of multilayer multiplier circuits, which are parallel each other. Comparing with traditional single layer doubler, the spatial multilayer doubler has higher 1dB compression point, so the output power can be increased when input power is increased. Both the input port and the output port of the doubler are rectangular waveguides. In order to achieve the transition from rectangular waveguide to planar circuit, the finline and ridge are used. Multilayer finlines act as divider, which couple power from input rectangular waveguide. Otherwise, multilayer ridges act as combiner, which combine the harmonic power to output rectangular waveguider. The passive circuits of the spatial multilayer doubler are modeled and analyzed with FDTD method. From the results, we can see that the passive circuits designed in the paper have very low insertion loss.

scholarly journals ANALYSIS OF STRENGTH CRITERIA IN THE DESIGN OF PRODUCTS FROM COMPOSITE MATERIALS

2021 ◽  
pp. 46-51
Author(s):  
Andrzej Dzierwa ◽  
Nataliia Stelmach
Keyword(s):  
Composite Material ◽  
Composite Materials ◽  
Optimal Design ◽  
Composite Structures ◽  
Single Layer ◽  
Unidirectional Composite ◽  
Strength Criteria ◽  
Optimal Criterion ◽  
Allowable Load ◽  
Unidirectional Composite Material

Technological progress gives rise to the continuous expansion of the class of structural materials and the improvement of their properties. The appearance of new materials is due to the natural desire to increase the efficiency of the structures under development. One of the most striking manifestations of progress in the development of materials, structures and technology is associated with the development and application of composite materials. Composites have a number of obvious advantages over other materials, in particular over metals. Such advantages are high specific strength and rigidity, high corrosion resistance, good ability to withstand alternating loads and others. It should be noted another, perhaps the most important feature of composites - is the ability to change the properties of the material in accordance with the purpose of the structure and the nature of its load during operation. Under the influence of loads on the structure, its strength is estimated by the ultimate state of the materials of the structural elements. When a boundary state arises in a material, its transition to another mechanical state - elastic, plastic, or fracture state - occurs. This article aims to determine the optimal criterion for the strength of composite material that takes into account different values of ultimate stresses not only in different directions of the coordinate axes, but also to stretch and compress and further calculate the maximum allowable load for single-layer unidirectional composite material During the research the main properties of composite materials, methods of manufacturing parts from composite material, their main properties and methods of destruction were considered. The characteristics of the strength criteria of composite materials are given, the most suitable for calculating the maximum value of the allowable load for a single-layer unidirectional composite material is determined. The proposed approach to the optimal design of elements of single-layer composite structures may be of interest to developers of numerous and analytical methods for solving problems of optimal design of more complex structures.  

Crystalline order to a resolution of 4.7 A in the sheath of Methanospirilium hungatii: A cross-beta structure

1984 ◽  
Vol 42 ◽  
pp. 214-215
Author(s):  
Murray Stewart ◽  
T.J. Beveridge ◽  
D. Sprott
Keyword(s):  
Cell Wall ◽  
Single Layer ◽  
Uranyl Acetate ◽  
Optical Diffraction ◽  
Tube Axis ◽  
Basic Subunit ◽  
Beta Structure ◽  
Diffraction Patterns ◽  
Protein Treatment ◽  
General Appearance

The archaebacterium Methanospirillum hungatii has a sheath as part of its cell wall which is composed mainly of protein. Treatment with dithiothreitol or NaOH released the intact sheaths and electron micrographs of this material negatively stained with uranyl acetate showed flattened hollow tubes, about 0.5 μm diameter and several microns long, in which the patterns from the top and bottom were superimposed. Single layers, derived from broken tubes, were also seen and were more simply analysed. Figure 1 shows the general appearance of a single layer. There was a faint axial periodicity at 28.5 A, which was stronger at irregular multiples of 28.5 A (3 and 4 times were most common), and fine striations were also seen at about 3° to the tube axis. Low angle electron diffraction patterns (not shown) and optical diffraction patterns (Fig. 2) from these layers showed a complex meridian (as a result of the irregular nature of the repeat along the tube axis) which showed a clear maximum at 28.5 A, consistent with the basic subunit spacing.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

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