Characterization of Scintillation Properties of a Gd-Doped Lead Chloride Single Crystal for $\gamma$-Rays at Low Temperature

2008 ◽  
Vol 55 (3) ◽  
pp. 1228-1231 ◽  
Author(s):  
Sunghwan Kim ◽  
H. J. Kim ◽  
H. Park ◽  
Heedong Kang ◽  
Sih-Hong Doh
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Gamma Rays ◽  
Lead Chloride

Low temperature acoustic characterization of PMN single crystal

2017 ◽  
Vol 122 (8) ◽  
pp. 084103 ◽  
Author(s):  
E. Smirnova ◽  
A. Sotnikov ◽  
S. Ktitorov ◽  
H. Schmidt
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Acoustic Characterization

Erstmalige Charakterisierung der Ammoniak-Proton-Komplexe [(NH3)3H]+ und [(NH3)4H]+ in den Kristallstrukturen von (NH4)3AsS4 · 5 NH3 und (NH4)3SbS4 · 8 NH3 / First Characterization of the Ammonia-Proton-Complexes [(NH3)3H]+ and [(NH3)4H]+ in the Crystal Structures of (NH4)3AsS4 · 5 NH3 and (NH4)3SbS4 · 8 NH3

2003 ◽  
Vol 58 (7) ◽  
pp. 672-677 ◽  
Author(s):  
Thomas Roßmeier ◽  
Nikolaus Korber
Keyword(s):  
Low Temperature ◽  
Ion Exchange ◽  
Hydrogen Bonds ◽  
Single Crystal ◽  
Liquid Ammonia ◽  
Ammonium Ion ◽  
X Ray ◽  
Exchange Material ◽  
First Time

The compounds (NH4)3AsS4· 5 NH3 (1) and (NH4)3SbS4· 8 NH3 (2) were prepared by the reaction of Na3AsS4 and Na3SbS4 with a proton-charged ion exchange material in liquid ammonia and characterized by low temperature single crystal X-ray structure analysis. The ammonium-ammoniates show H3N-H···N-hydrogen bonds between the ammonium ion and ammonia molecules ranging from 1.86 to 2.55 Å (DHA-angles: 145 - 173°) and H3N-H···S-bonds to the thioanions between 2.36 and 2.97 Å (DHA-angles: 130 - 176°). The former of the interactions are responsible for the formation of [(NH3)2H]+, [(NH3)3H]+ and [(NH3)4H]+-complexes, the last two of which were characterized by X-ray analysis for the first time.

scholarly journals Raise the anchor! Synthesis, X-ray and NMR characterization of 1,3,5-triazinanes with an axial tert-butyl group

2020 ◽  
Vol 18 (41) ◽  
pp. 8386-8394 ◽  
Author(s):  
Alexey V. Kletskov ◽  
Anastasya D. Zatykina ◽  
Mariya V. Grudova ◽  
Anna A. Sinelshchikova ◽  
Mikhail S. Grigoriev ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Low Temperature ◽  
Single Crystal ◽  
Crystal Structure Analysis ◽  
X Ray ◽  
Butyl Group ◽  
Tert Butyl Group ◽  
Nmr Characterization ◽  
Single Crystal Structure Analysis

N-t-Bu-N′,N′′-Disulfonamide-1,3,5-triazinanes were synthesized and studied by X-ray single crystal structure analysis and dynamic low-temperature NMR.

Characterization of Low Temperature SiNx Films for 3D/2.5D-IC TSV

2015 ◽  
Vol 135 (7) ◽  
pp. 733-738 ◽  
Author(s):  
Yasushi Kobayashi ◽  
Yoshihiro Nakata ◽  
Tomoji Nakamura ◽  
Mayumi B. Takeyama ◽  
Masaru Sato ◽  
...  
Keyword(s):  
Low Temperature

Spectral Investigation on the Growth and Characterization of NLO Crystals of Thiourea Succinic Acid Single Crystal.

2015 ◽  
Vol 2 (2) ◽  
pp. 70-73
Author(s):  
Kannan.P ◽  
Thambidurai.S ◽  
Suresh.N
Keyword(s):  
Single Crystal ◽  
Succinic Acid ◽  
Slow Evaporation Technique ◽  
Absorption Studies ◽  
Dta Analysis ◽  
Evaporation Technique ◽  
Ft Ir ◽  
Ir Spectroscopic ◽  
Thermal Stability Of

Growth of optically transparent single crystals of thiourea succinic acid (TUSA) was grown successfully from aqueous solution by slow evaporation technique. The crystal structure was elucidated using the single crystal XRD. The various functional groups and the modes of vibrations were identified by FT-IR spectroscopic analysis. The optical absorption studies indicate that the optical transparency window is quite wide making its suitable for NLO applications. Thermal stability of the crown crystal carried out by TGA-DTA analysis.

ФОРМИРОВАНИЕ ПЕРЕХОДНОГО СЛОЯ ALN НА ТЕМПЛЕЙТАХ 3С-SIC/SI(111) МЕТОДОМ АММИАЧНОЙ МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 148-153
Author(s):  
С.Д. Федотов ◽  
А.В. Бабаев ◽  
В.Н. Стаценко ◽  
К.А. Царик ◽  
В.К. Неволин
Keyword(s):  
Crystal Structure ◽  
Growth Rate ◽  
Low Temperature ◽  
Surface Morphology ◽  
Single Crystal ◽  
Root Mean Square Roughness ◽  
Rate Variation ◽  
Mean Square ◽  
Nucleation Layer ◽  
Low Temperature Epitaxy

Представлены результаты изучения морфологии поверхности и структуры слоев AlN, сформированных аммиачной МЛЭ на темплейтах 3C-SiC/Si(111) on-axis- и 4° off-axis-разориентации. Опробован технологический режим низкотемпературной эпитаксии зародышевого слоя AlN на поверхности 3C-SiC(111). Среднеквадратичная шероховатость поверхности (5 х 5 мкм) слоев AlN толщиной 150 ± 50 нм составила 2,5-3,5 нм на темплейтах 3C-SiC/Si(111) on-axis и 3,3-3,5 нм на 4° off-axis. Показано уменьшение шероховатости смачивающего слоя AlN при изменении скорости роста. Получены монокристаллические слои AlN(0002) со значениями FWHM (ω-геометрия) 1,4-1,6°. The paper presents the surface morphology and crystal structure of AlN layers formed by ammonia MBE on 3C-SiC/Si(111) on-axis and 4° off-axis disorientation. It offers the technological approach of low-temperature epitaxy of the AlN nucleation layer on the 3C-SiC (111) surface. Root mean square roughness (5 х 5 |xm) of AlN layers with thickness of 150 ± 50 nm was 2,5-3,5 nm onto on-axis templates and 3.3-3.5 nm onto 4° off-axis. It appears that the RMS roughness of the AlN surface is changing with the growth rate variation. Single-crystal AlN(0002) layers with FWHM values (ω-geometry) of 1.4-1.6° have been obtained.

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