Generalized Inference for Measuring Process Yield With the Contamination of Measurement Errors—Quality Control for Silicon Wafer Manufacturing Processes in the Semiconductor Industry

2012 ◽  
Vol 25 (2) ◽  
pp. 272-283 ◽  
Author(s):  
Chien-Wei Wu ◽  
Mou-Yuan Liao
2019 ◽  
Vol 11 (2) ◽  
pp. 87-105
Author(s):  
Mithun Sharma ◽  
Sanjeev P. Sahni ◽  
Shilpi Sharma

Abstract Aiming to reduce flatness (Total Thickness Variation, TTV) defects in the lapping process of the silicon wafer manufacturing, it is crucial to understand and eliminate the root cause(s). Financial losses resulting from TTV defects make the lapping process unsustainable. DMAIC (Define, Measure, Analyse, Improve and Control), which is a Six Sigma methodology, was implemented to improve the quality of the silicon wafer manufacturing process. The study design and the choice of procedures were contingent on customer requirements and customised to ensure maximum satisfaction; which is the underlying principle of the rigorous, statistical technique of Six Sigma. Previously unknown causes of high TTV reject rates were identified, and a massive reduction in the TTV reject rate was achieved (from 4.43% to 0.02%). Also, the lapping process capability (Ppk) increased to 3.87 (beyond the required standard of 1.67), suggesting sustainable long-term stability. Control procedures were also effectively implemented using the techniques of poka yoke and control charts. This paper explores the utility of Six Sigma, a quality management technique, to improve the quality of a process used in the semiconductor industry. The application of the Six Sigma methodology in the current project provides an example of the root cause investigation methodology that can be adopted for similar processes or industries. Some of the statistical tools and techniques were used for the first time in this project, thereby providing new analysis and quality improvement platform for the future. The article offers a deeper understanding of the factors that impact on the silicon wafer flatness in the lapping process. It also highlights the benefits of using a structured problem-solving methodology like Six Sigma.


Author(s):  
Pei Y. Tsai ◽  
Junedong Lee ◽  
Paul Ronsheim ◽  
Lindsay Burns ◽  
Richard Murphy ◽  
...  

Abstract A stringent sampling plan is developed to monitor and improve the quality of 300mm SOI (silicon on insulator) starting wafers procured from the suppliers. The ultimate goal is to obtain the defect free wafers for device fabrication and increase yield and circuit performance of the semiconductor integrated circuits. This paper presents various characterization techniques for QC monitor and examples of the typical defects attributed to wafer manufacturing processes.


2000 ◽  
Author(s):  
Songbin Wei ◽  
Imin Kao

Abstract In wiresaw manufacturing process where thin wire moving at high speed is pushed onto ingot to produce slices of wafer, the wire is constrained by two wafer walls as it slices into the ingot. In this paper, we investigate the vibration of such wire under the constraints of wafer walls. To address this problem, the model for wire vibration with impact to wafer walls is developed. The equation of motion is discretized using the Galerkin’s method. The principle of impulse and momentum is utilized to solve the impact problem. The results of analysis and simulation indicate that the response under a pointwise sinusoidal excitation is neither periodical nor symmetric with respect to the horizontal axis, due to the excitation from the impact. The wire vibration behavior is affected dramatically by the wafer wall constraints.


2016 ◽  
Vol 44 (5) ◽  
pp. 20150262 ◽  
Author(s):  
Chien-Wei Wu ◽  
Mou-Yuan Liao ◽  
Chi-Wei Lin ◽  
Tzu-Ling Lin

2012 ◽  
Vol 239-240 ◽  
pp. 726-729
Author(s):  
Qiao Liang Wang ◽  
Yu Zhao ◽  
Rui Feng Lv ◽  
Yan Yan Zhu

In semiconductor industry, carrier concentration of a semiconductor material needs to be measured. Theoretical computation is complex and has its limitation. Experiment measurement always needs complicated and expensive instruments. Here, a new method for measuring the carrier concentration of silicon wafer was put forward. The dependen curve of thermoelectromotive force on temperature was graphed. The results showed that when temperature is below 460K, thermoelectromotive force is proportional to temperature of the hot probe. With the help of Origin software, slope of curve was obtained.Accoeding to related formula,the doping concentartion and it’s uniformity were figured out finally .Compared with other similar methods, this method is more simplified and thet equipment is cheaper.


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