Background:
A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical
Gate (DMG-GC-DOT) MOSFET is presented in this paper.
Methods:
Analytical model of drain current is developed using a quasi-two-dimensional cylindrical
form of the Poisson equation and is expressed as a function of the surface potential, which is calculated
using the expressions of the current density.
Results:
Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas -
TCAD software presents a good agreement from subthreshold to strong inversion regime and for different
bias voltages.
Conclusion:
Two oxide thicknesses with different permittivity can effectively improve the subthreshold
current of DMG-GC-DOT MOSFET.
