Analysis of spurious modes, Q, and electromechanical coupling for 1.22 GHz AlN MEMS contour-mode resonators fabricated in an 8″ silicon fab

Author(s):  
Enes Calayir ◽  
Gianluca Piazza ◽  
Jeffrey Bo Woon Soon ◽  
Navab Singh
Author(s):  
Andrea Lozzi ◽  
Ernest Ting-Ta Yen ◽  
Paul Muralt ◽  
Luis Guillermo Villanueva

2011 ◽  
Vol 17 (10-11) ◽  
pp. 1599-1609 ◽  
Author(s):  
Masoud Baghelani ◽  
Habib Badri Ghavifekr ◽  
Afshin Ebrahimi

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 758
Author(s):  
Soon In Jung ◽  
Chaehyun Ryu ◽  
Gianluca Piazza ◽  
Hoe Joon Kim

This study presents the effects of bottom electrode designs on the operation of laterally vibrating aluminum nitride (AlN) contour-mode resonators (CMRs). A total of 160 CMRs were analyzed with varying bottom electrode areas at two resonant frequencies (f0) of about 230 MHz and 1.1 GHz. Specifically, we analyzed the impact of bottom electrode coverage rates on the resonator quality factor (Q) and electromechanical coupling (k2), which are important parameters for Radio Frequency (RF) and sensing applications. From our experiments, Q exhibited different trends to electrode coverage rates depending on the device resonant frequencies, while k2 increased with the coverage rate regardless of f0. Along with experimental measurements, our finite element analysis (FEA) revealed that the bottom electrode coverage rate determines the active (or vibrating) region of the resonator and, thus, directly impacts Q. Additionally, to alleviate thermoelastic damping (TED) and focus on mechanical damping effects, we analyzed the device performance at 10 K. Our findings indicated that a careful design of bottom electrodes could further improve both Q and k2 of AlN CMRs, which ultimately determines the power budget and noise level of the resonator in integrated oscillators and sensor systems.


2020 ◽  
Vol 64 (1-4) ◽  
pp. 549-556
Author(s):  
Yajun Luo ◽  
Linwei Ji ◽  
Yahong Zhang ◽  
Minglong Xu ◽  
Xinong Zhang

The present work proposed an hourglass-type electromagnetic isolator with negative resistance (NR) shunt circuit to achieve the effective suppression of the micro-amplitude vibration response in various advanced instruments and equipment. By innovatively design of combining the displacement amplifier and the NR electromagnetic shunt circuit, the current new type of vibration isolator not only can effectively solve the problem of micro-amplitude vibration control, but also has significant electromechanical coupling effect, to obtain excellent vibration isolation performance. The design of the isolator and motion relationship is presented firstly. The electromechanical coupling dynamic model of the isolator is also given. Moreover, the optimal design of the NR electromagnetic shunt circuit and the stability analysis of the vibration isolation system are carried out. Finally, the simulation results about the transfer function and vibration responses demonstrated that the isolator has a significant isolation performance.


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