Comparison of Gate Oxide Lifetime Predictions with Charge-to-Breakdown Approach and Constant-Voltage TDDB on SiC Power MOSFET

2021 ◽  
Author(s):  
Shengnan Zhu ◽  
Tianshi Liu ◽  
Limeng Shi ◽  
Michael Jin ◽  
Hema Lata Rao Maddi ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Constant Voltage ◽  
Power Mosfet

Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 782-787
Author(s):  
Kevin Matocha ◽  
In Hwan Ji ◽  
Sauvik Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Threshold Voltage ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Gate Bias ◽  
Constant Voltage ◽  
Time Dependent Dielectric Breakdown ◽  
Planar Silicon ◽  
State Of Art

The reliability and ruggedness of Monolith/Littelfuse planar SiC MOSFETs have been evaluated using constant voltage time-dependent dielectric breakdown for gate oxide wearout predictions, showing estimated > 100 year life at VGS=+25V and T=175C. Using extended time high-temperature gate bias, we have shown < 250 mV threshold voltage shifts for > 5000 hours under VGS=+25V and negligible threshold voltage shifts for > 2500 hours under VGS=-10V, both at T=175C. Under unclamped inductive switching, these 1200V, 80 mOhm SiC MOSFETs survive 1000 mJ of avalanche energy, meeting state-of-art ruggedness for 1200V SiC MOSFETs.

The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses

2005 ◽  
Vol 14 (9) ◽  
pp. 1886-1891 ◽  
Author(s):  
Wang Yan-Gang ◽  
Xu Ming-Zhen ◽  
Tan Chang-Hua ◽  
Zhang J F. ◽  
Duan Xiao-Rong
Keyword(s):  
Leakage Current ◽  
Conduction Mechanism ◽  
Gate Oxide ◽  
Constant Voltage ◽  
Stress Induced Leakage Current ◽  
Thin Gate Oxide

Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET

2021 ◽  
pp. 1-11
Author(s):  
Xiaowen Liang ◽  
Jinghao Zhao ◽  
Qiwen Zheng ◽  
JiangWei Cui ◽  
Sheng Yang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Power Mosfet ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

2003 ◽  
Vol 433-436 ◽  
pp. 725-730 ◽  
Author(s):  
Satoshi Tanimoto ◽  
Masakatsu Hoshi ◽  
Norihiko Kiritani ◽  
Hideyo Okushi ◽  
Kazuo Arai
Keyword(s):  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Gate Oxide ◽  
Fabrication Process ◽  
Dielectric Breakdown Strength ◽  
Power Mosfet ◽  
High Dielectric

scholarly journals The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
Jingyu Shen ◽  
Can Tan ◽  
Rui Jiang ◽  
Wei Li ◽  
Xue Fan ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Carrier Injection ◽  
Constant Voltage ◽  
Mos Capacitors ◽  
Hot Carrier ◽  
Hot Carrier Injection ◽  
Voltage Stress ◽  
Thin Gate Oxide

The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB) of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig) of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N) tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd) under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

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