A kind of bilayer structure ceramic scintillators designed for phoswich detectors

2017 ◽  
Vol 100 (12) ◽  
pp. 5593-5600 ◽  
Author(s):  
Zewang Hu ◽  
Xiaopu Chen ◽  
Dongzhou Ding ◽  
Maoqing Cao ◽  
Yun Shi ◽  
...  
Keyword(s):  
Bilayer Structure ◽  
Phoswich Detectors

Ferrielectric properties of a bilayer structure with RKKY-like interaction: A Monte Carlo study

2021 ◽  
Vol 572 ◽  
pp. 125882
Author(s):  
T. Sahdane ◽  
R. Masrour ◽  
A. Jabar
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Bilayer Structure

scholarly journals Wild-Type and Mutant Hemagglutinin Fusion Peptides Alter Bilayer Structure as Well as Kinetics and Activation Thermodynamics of Stalk and Pore Formation Differently: Mechanistic Implications

2013 ◽  
Vol 105 (11) ◽  
pp. 2495-2506 ◽  
Author(s):  
Hirak Chakraborty ◽  
Pradip K. Tarafdar ◽  
David G. Klapper ◽  
Barry R. Lentz
Keyword(s):  
Pore Formation ◽  
Bilayer Structure ◽  
Fusion Peptides ◽  
Wild Type

Bilayer structure for hydrogen detection in a surface acoustic wave sensor system

2002 ◽  
Vol 82 (2-3) ◽  
pp. 265-271 ◽  
Author(s):  
Wieslaw P. Jakubik ◽  
Marian W. Urbańczyk ◽  
Stanislaw Kochowski ◽  
Jerzy Bodzenta
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Sensor System ◽  
Bilayer Structure ◽  
Hydrogen Detection ◽  
Acoustic Wave Sensor

Novel Multilayer Process for CuInSe2 Thin Film Formation by Rapid Thermal Processing

1997 ◽  
Vol 485 ◽  
Author(s):  
Chih-hung Chang ◽  
Billy Stanbery ◽  
Augusto Morrone ◽  
Albert Davydov ◽  
Tim Anderson
Keyword(s):  
Thermal Processing ◽  
Physical Vapor Deposition ◽  
Film Formation ◽  
Rapid Thermal Processing ◽  
Precursor Film ◽  
Bilayer Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Cuinse2 Thin Film

AbstractCuInSe2 thin films have been synthesized from binary precursors by Rapid Thermal Processing (RTP) at a set-point temperature of 290°C for 70 s. With appropriate processing conditions no detrimental Cu2-xSe phase was detected in the CIS films. The novel binary precursor approach consisted of a bilayer structure of In-Se and Cu-Se compounds. This bilayer structure was deposited by migration enhanced physical vapor deposition at a low temperature (200°C) and the influence of deposition parameters on the precursor film composition was determined. The bilayer structure was then processed by RTP and characterized for constitution by X-ray diffraction and for composition by Wavelength Dispersive X-ray Spectroscopy.

A calibration method for phoswich detectors

2002 ◽  
Vol 491 (1-2) ◽  
pp. 181-193 ◽  
Author(s):  
W. Gawlikowicz ◽  
J. Tõke ◽  
W.U. Schröder
Keyword(s):  
Calibration Method ◽  
Phoswich Detectors

Design Considerations of Phoswich Detectors for High Resolution Positron Emission Tomography

2009 ◽  
Vol 56 (1) ◽  
pp. 182-188 ◽  
Author(s):  
Lars Eriksson ◽  
Charles L. Melcher ◽  
Marita Eriksson ◽  
Harold Rothfuss ◽  
Ron Grazioso ◽  
...  
Keyword(s):  
Positron Emission Tomography ◽  
High Resolution ◽  
Emission Tomography ◽  
Design Considerations ◽  
Positron Emission ◽  
Phoswich Detectors

Reliable analog resistive switching behaviors achieved using memristive devices in AlOx/HfOx bilayer structure for neuromorphic systems

2021 ◽  
Author(s):  
Meng Qi ◽  
Tianquan Fu ◽  
Huadong Yang ◽  
ye tao ◽  
Chunran Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Learning Experience ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Spike Timing ◽  
Information Storage ◽  
Bilayer Structure ◽  
Neuromorphic Computing ◽  
Von Neumann ◽  
Simulation Based

Abstract Human brain synaptic memory simulation based on resistive random access memory (RRAM) has an enormous potential to replace traditional Von Neumann digital computer thanks to several advantages, including its simple structure, high-density integration, and the capability to information storage and neuromorphic computing. Herein, the reliable resistive switching (RS) behaviors of RRAM are demonstrated by engineering AlOx/HfOx bilayer structure. This allows for uniform multibit information storage. Further, the analog switching behaviors are capable of imitate several synaptic learning functions, including learning experience behaviors, short-term plasticity-long-term plasticity transition, and spike-timing-dependent-plasticity (STDP). In addition, the memristor based on STDP learning rules are implemented in image pattern recognition. These results may offer a promising potential of HfOx-based memristors for future information storage and neuromorphic computing applications.

Demonstration of n- and p-TFET operations in a single ZnSnO/SiGe bilayer structure

2019 ◽  
Author(s):  
K. Kato ◽  
K. Jo ◽  
H. Matsui ◽  
H. Tabata ◽  
T. Mori ◽  
...  
Keyword(s):  
Bilayer Structure
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