A study on the indexing method of the electron backscatter diffraction pattern assisted by the Kikuchi bandwidth

2019 ◽  
Vol 277 (1) ◽  
pp. 3-11
Author(s):  
F. PENG ◽  
Y. ZHANG ◽  
J. ZHANG ◽  
C. LIN ◽  
C. JIANG ◽  
...  
2020 ◽  
Vol 53 (4) ◽  
pp. 1060-1072 ◽  
Author(s):  
Edward L. Pang ◽  
Peter M. Larsen ◽  
Christopher A. Schuh

Resolving pseudosymmetry has long presented a challenge for electron backscatter diffraction and has been notoriously challenging in the case of tetragonal ZrO2 in particular. In this work, a method is proposed to resolve pseudosymmetry by building upon the dictionary indexing method and augmenting it with the application of global optimization to fit accurate pattern centers, clustering of the Hough-indexed orientations to focus the dictionary in orientation space and interpolation to improve the accuracy of the indexed solution. The proposed method is demonstrated to resolve pseudosymmetry with 100% accuracy in simulated patterns of tetragonal ZrO2, even with high degrees of binning and noise. The method is then used to index an experimental data set, which confirms its ability to efficiently and accurately resolve pseudosymmetry in these materials. The present method can be applied to resolve pseudosymmetry in a wide range of materials, possibly even some more challenging than tetragonal ZrO2. Source code for this implementation is available online.


Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.


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