scholarly journals Resolving pseudosymmetry in tetragonal ZrO2 using electron backscatter diffraction with a modified dictionary indexing approach

2020 ◽  
Vol 53 (4) ◽  
pp. 1060-1072 ◽  
Author(s):  
Edward L. Pang ◽  
Peter M. Larsen ◽  
Christopher A. Schuh
Keyword(s):  
Present Method ◽  
Electron Backscatter Diffraction ◽  
Source Code ◽  
Tetragonal Zro2 ◽  
Data Set ◽  
Orientation Space ◽  
Indexing Method ◽  
Wide Range ◽  
Electron Backscatter ◽  
Backscatter Diffraction

Resolving pseudosymmetry has long presented a challenge for electron backscatter diffraction and has been notoriously challenging in the case of tetragonal ZrO2 in particular. In this work, a method is proposed to resolve pseudosymmetry by building upon the dictionary indexing method and augmenting it with the application of global optimization to fit accurate pattern centers, clustering of the Hough-indexed orientations to focus the dictionary in orientation space and interpolation to improve the accuracy of the indexed solution. The proposed method is demonstrated to resolve pseudosymmetry with 100% accuracy in simulated patterns of tetragonal ZrO2, even with high degrees of binning and noise. The method is then used to index an experimental data set, which confirms its ability to efficiently and accurately resolve pseudosymmetry in these materials. The present method can be applied to resolve pseudosymmetry in a wide range of materials, possibly even some more challenging than tetragonal ZrO2. Source code for this implementation is available online.

scholarly journals Application of Electron Backscatter Diffraction (EBSD) for Crystallographic Characterization of Aluminum-Doped Zinc Oxide Sputtered Films

2013 ◽  
Vol 19 (S4) ◽  
pp. 103-104
Author(s):  
C.B. Garcia ◽  
E. Ariza ◽  
C.J. Tavares
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Zinc Oxide ◽  
Electron Backscatter Diffraction ◽  
Wide Range ◽  
Electron Backscatter ◽  
Aluminum Doped Zinc Oxide ◽  
Ebsd Technique ◽  
Backscatter Diffraction

Zinc Oxide is a wide band-gap compound semiconductor that has been used in optoelectronic and photovoltaic applications due to its good electrical and optical properties. Aluminium has been an efficient n-type dopant for ZnO to produce low resistivity films and high transparency to visible light. In addition, the improvement of these properties also depends on the morphology, crystalline structure and deposition parameters. In this work, ZnO:Al films were produced by d.c. pulsed magnetron sputtering deposition from a ZnO ceramic target (2.0 wt% Al2O3) on glass substrates, at a temperature of 250 ºC.The crystallographic orientation of aluminum doped zinc oxide (ZnO:Al) thin films has been studied by Electron Backscatter Diffraction (EBSD) technique. EBSD coupled with Scanning Electron Microscopy (SEM) is a powerful tool for the microstructural and crystallographic characterization of a wide range of materials.The investigation by EBSD technique of such films presents some challenges since this analysis requires a flat and smooth surface. This is a necessary condition to avoid any shadow effects during the experiments performed with high tilting conditions (70º). This is also essential to ensure a good control of the three dimensional projection of the crystalline axes on the geometrical references related to the sample.Crystalline texture is described by the inverse pole figure (IPF) maps (Figure 1). Through EBSD analysis it was observed that the external surface of the film presents a strong texture on the basal plane orientation (grains highlighted in red colour). Furthermore it was possible to verify that the grain size strongly depends on the deposition time (Figure 1 (a) and (b)). The electrical and optical film properties improve with increasing of the grain size, which can be mainly, attributed to the decrease in scattering grain boundaries which leads to an increasing in carrier mobility (Figure 2).The authors kindly acknowledge the financial support from the Portuguese Foundation for Science and Technology (FCT) scientific program for the National Network of Electron Microscopy (RNME) EDE/1511/RME/2005.

scholarly journals Microstructural constraints on magmatic mushes under Kīlauea Volcano, Hawaiʻi

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Penny E. Wieser ◽  
Marie Edmonds ◽  
John Maclennan ◽  
John Wheeler
Keyword(s):  
Spatial Distribution ◽  
Dendritic Growth ◽  
Electron Backscatter Diffraction ◽  
Microstructural Analysis ◽  
Kilauea Volcano ◽  
Kīlauea Volcano ◽  
Mantle Peridotites ◽  
Wide Range ◽  
Electron Backscatter ◽  
Backscatter Diffraction

AbstractDistorted olivines of enigmatic origin are ubiquitous in erupted products from a wide range of volcanic systems (e.g., Hawaiʻi, Iceland, Andes). Investigation of these features at Kīlauea Volcano, Hawaiʻi, using an integrative crystallographic and chemical approach places quantitative constraints on mush pile thicknesses. Electron backscatter diffraction (EBSD) reveals that the microstructural features of distorted olivines, whose chemical composition is distinct from undistorted olivines, are remarkably similar to olivines within deformed mantle peridotites, but inconsistent with an origin from dendritic growth. This, alongside the spatial distribution of distorted grains and the absence of adcumulate textures, suggests that olivines were deformed within melt-rich mush piles accumulating within the summit reservoir. Quantitative analysis of subgrain geometry reveals that olivines experienced differential stresses of ∼3–12 MPa, consistent with their storage in mush piles with thicknesses of a few hundred metres. Overall, our microstructural analysis of erupted crystals provides novel insights into mush-rich magmatic systems.

scholarly journals Electron Backscatter Diffraction: A Powerful Tool for Phase Identification in the SEM

1999 ◽  
Vol 589 ◽  
Author(s):  
J. R. Michael ◽  
R. P. Goehner
Keyword(s):  
Spatial Resolution ◽  
Electron Backscatter Diffraction ◽  
Unit Cell ◽  
Particle Analysis ◽  
Phase Identification ◽  
Cell Determination ◽  
Wide Range ◽  
Electron Backscatter ◽  
Backscatter Diffraction ◽  
Better Than

AbstractEBSD in the SEM has been developed into a tool that can provide identification of unknown crystalline phases with a spatial resolution that is better than one micrometer. This technique has been applied to a wide range of materials. Use of the HOLZ rings in the EBSD patterns has enabled the reduced unit cell to be determined from unindexed EBSD patterns. This paper introduces EBSD for phase identification and illustrates the technique with examples from metal joining and particle analysis. Reduced unit cell determination from EBSD patterns is then discussed.

scholarly journals Reflector Selection for the Indexing of Electron Backscatter Diffraction Patterns

2019 ◽  
Vol 25 (3) ◽  
pp. 675-681 ◽  
Author(s):  
Stuart I. Wright ◽  
Saransh Singh ◽  
Marc De Graef
Keyword(s):  
Electron Backscatter Diffraction ◽  
Data Set ◽  
Peak Intensity ◽  
Structure Factors ◽  
Electron Backscatter ◽  
Unit Cells ◽  
Selection For ◽  
Diffraction Patterns ◽  
Backscatter Diffraction ◽  
Nickel Silicon

AbstractWe propose a new methodology for ranking the reflectors used in traditional Hough-based indexing of electron backscatter diffraction (EBSD) patterns. Instead of kinematic X-ray or electron structure factors (Fhkl) currently utilized, we propose the integrated Kikuchi band intensity parameter (βhkl) based on integrated dynamical electron backscatter intensities. The proposed parameter is compared with the traditional kinematical intensity, $I_{hkl}^{{\rm kin}} $, as well as the average Hough transform peak intensity, $I_{hkl}^{{\rm HSP}} $ and used to index EBSD patterns for a number of different material systems of varying unit cell complexities including nickel, silicon, rutile, and forsterite. For elemental structures, βhkl closely follows the kinematical ranking. However, significant ranking differences arise for more complex unit cells, with the βhkl parameter showing a better correlation with the integrated Hough intensities. Finally, Hough-based indexing of a simulated forsterite data set showed an appreciable improvement in the median confidence index (0.15 to 0.35) when βhkl is used instead of $I_{hkl}^{{\rm kin}} $ for ranking the reflectors.

Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling

2012 ◽  
Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  
Keyword(s):  
High Resolution ◽  
Cross Section ◽  
High Throughput ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Grain Structure ◽  
Electron Backscatter ◽  
Section Surface ◽  
Backscatter Diffraction ◽  
Section Analysis

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

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