scholarly journals Introducing SiOC as novel dielectric platform for photonic integration

2020 ◽  
Vol 16 (1) ◽  
pp. 81-84
Author(s):  
Faisal Ahmed Memon ◽  
Imran Ali Qureshi ◽  
Abdul Latif Memon ◽  
Erum Saba
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Large Scale ◽  
Rf Sputtering ◽  
Silicon Oxycarbide ◽  
Index Of Refraction ◽  
Photonic Integration ◽  
Index Contrast ◽  
Photonic Waveguides ◽  
First Time

In this paper, we explore the potential of silicon oxycarbide (SiOC) as a novel dielectric platform for integrated photonics and present photonic waveguides. The interesting features of SiOC are its wide tunable window of refractive index and low absorption, that are considered key for large scale photonic integration. It is possible to tune SiOC refractive index from silica glass (1.45) to silicon carbide (3.2) that allows to realize a myriad of photonic passive devices. We have prepared SiOC thin films by employing reactive RF sputtering technique and examined their structural and optical properties using several techniques such as SEM, AFM, ellipsometry, profilometry, and prism coupling. For the first time, SiOC thin films with index of refraction of 1.554 at the standard telecom wavelength 1.55 μm are exploited for the fabrication of photonic waveguides and the propagation losses around 0.37 dB/mm are measured. SiOC photonic waveguides exhibit relatively higher index contrast with silica cladding when compared to traditional Ge-doped silica platform.

YBa2Cu3O7 Thin Films on Polycrystalline Diamond Films with Buffer Layers

1992 ◽  
Vol 275 ◽  
Author(s):  
G. Cui ◽  
C. P. Beetz ◽  
B. A. Lincoln ◽  
P. S. Kirlin
Keyword(s):  
Thin Films ◽  
Diamond Films ◽  
Rf Sputtering ◽  
Polycrystalline Diamond ◽  
Fast Response ◽  
Buffer Layers ◽  
Multichip Modules ◽  
Ir Detectors ◽  
Ybco Films ◽  
First Time

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.

Optical Properties of NiO Thin Films: A Potential Material for Optoelectronic Devices

2012 ◽  
Vol 488-489 ◽  
pp. 103-108 ◽  
Author(s):  
Manisha Tyagi ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Band Gap ◽  
Urbach Energy ◽  
Rf Sputtering ◽  
Blue Shift ◽  
Structural Disorder ◽  
Near Ir

The influence of substrate temperature on the UV-Visible-near-IR optical properties, namely the band gap, the Urbach energy and the refractive index of NiO thin films deposited by RF sputtering has been investigated. The optical band gap of thin films showed the blue-shift in the transmission spectra with increase in the substrate temperature which is related to variation in carrier concentration of the deposited films. Urbach energy (EU) values indicate that the films deposited at 400 oC substrate temperature show least structural disorder. The refractive index of the films is found to decrease continuously with increase in the substrate temperature at all photon energies in the visible and near-IR region, and is attributed to the decreasing packing density of the films. Introduction

Preparation and Characterization of BaTiO3 Thin Films on MgO-buffered Si(100) Substrates by RF Sputtering

1997 ◽  
Vol 12 (4) ◽  
pp. 1152-1159 ◽  
Author(s):  
Sangsub Kim ◽  
Shunichi Hishita
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Large Scale ◽  
Rf Sputtering ◽  
Morphological Characteristics ◽  
Electrical Measurements ◽  
Metal Type ◽  
Metal Insulator Metal

We report the results of a study on the deposition and characterization of partially oriented BaTiO3 thin films on MgO-buffered Si(100) by radio-frequency magnetron sputtering. The structural and morphological characteristics of the MgO buffer layer were investigated as a function of substrate temperature. The x-ray θ-2θ, φ scans, and observation of surface morphology revealed that MgO grew with a tendency of (001) orientation. Partially (00l) or (h00) textured BaTiO3 thin films were obtained on Si(100) with the MgO buffer layer while randomly oriented BaTiO3 thin films with large-scale cracks on the surface were made without the MgO layer. Pt/BaTiO3/Pt multistructures were formed on Si(100), MgO/Si(100), and MgO(100) single crystal substrates to conduct preliminary electrical measurements for metal-insulator-metal type capacitor. Comparison of the crystallographic orientation, morphology, and electrical properties between the BaTiO3 films on Si(100) with and without the MgO buffer layer supported the favorable role of the MgO layer as a buffer for the growth of BaTiO3 films on Si(100).

Effect of RF Sputtering Power on the Structural, Optical and Hydrophobic Properties of SiNx Thin Film

2011 ◽  
Vol 194-196 ◽  
pp. 2340-2346 ◽  
Author(s):  
Hong Yu Liang ◽  
Qing Nan Zhao ◽  
Feng Gao ◽  
Wen Hui Yuan ◽  
Yu Hong Dong
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Silicon Nitride ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Hydrophobic Properties ◽  
X Ray ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Sputtering Power

With a mixture gas of N2 and Ar, silicon nitride thin films were deposited on glass substrates by different radio frequency (RF) magnetron sputtering power without intentional substrate heating. The chemical composition, phase structure, surface morphology, optical properties, refractive index, hydrophobic properties of the films were characterized by X-ray energy dispersive spectroscopy(EDS), X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), ultraviolet-visible spectroscopy(UV-Vis), nkd-system spectrophotometer and CA-XP150 contact angle analyzer, respectively. The results showed that silicon nitride thin films were amorphous and rich in Si; the transmittance reduced but refractive index and surface roughness increased; and the hydrophobic properties of SiNx became better with the increase of RF power.

Optical Properties of RF-Sputtered a-SiGe:H:O Alloys

1986 ◽  
Vol 77 ◽  
Author(s):  
J. M. T. Pereira ◽  
P. K. Banerjee ◽  
S. S. Mitra
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Constants ◽  
Rf Sputtering ◽  
Normal Incidence ◽  
Reflection And Transmission ◽  
Amorphous Thin Films ◽  
Optical Gap ◽  
Transmission Measurements ◽  
Substrate Temperatures

ABSTRACTAmorphous thin films of SixGe1-x:O (x = 0.70) were prepared by RF-sputtering at several substrate temperatures. The structural properties of these films were studied by IR spectroscopy and revealed features characteristic of hydrogen and/or oxygen bonded to silicon. The optical constants (n,k) were determined from reflection and transmission measurements at near-normal incidence for photon energies in the range of 1 eV and 2.6 eV. The optical gap was derived from the Taue plot and correlated with the composition of the samples. The increase of hydrogen and/or oxygen decreases the value of the refractive index and increases the optical gap.

High Refractive Index Inorganic-Organic Hybrid Materials for Photonic Applications

2007 ◽  
Vol 1007 ◽  
Author(s):  
Pélagie Declerck ◽  
Ruth Houbertz ◽  
Georg Jakopic ◽  
Sven Passinger ◽  
Boris Chichkov
Keyword(s):  
Refractive Index ◽  
Processing Parameters ◽  
High Refractive Index ◽  
Material System ◽  
Organic Hybrid ◽  
Two Photon ◽  
Organically Modified ◽  
Index Contrast ◽  
First Time ◽  
Alkoxide Precursors

ABSTRACTHigh refractive index materials are attractive for many photonic elements. For example, 3D photonic bandgap (PBG) materials have been proposed as the basis of many devices. In order to create complete 3D PBGs, materials enabling high refractive index contrast are needed. We here report on novel high refractive index hybrid polymers. They were synthesized by hydrolysis/polycondensation reactions of organo-alkoxysilanes and Ti alkoxide precursors, resulting in organically modified inorganic-oxidic pre-polymer resins. These can be organically cross-linked by one- or two-photon polymerization (2PP). The latter method enables the writing of arbitrary 3D structures. The introduction of Ti into the inorganic-oxidic network accounts for an increase in the material's refractive index, which could be varied between 1.62 and 1.8. Optical properties such as refractive index and absorption losses were determined on an exemplary material system in the lower refractive index range. The influence of the processing parameters on the degree of organic polymerization, and the refractive index of these novel high index materials was investigated in particular. 3D photonic crystal structures were written for the first time in a high-refractive index hybrid polymer.

scholarly journals Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7364
Author(s):  
Dario Schiavon ◽  
Robert Mroczyński ◽  
Anna Kafar ◽  
Grzegorz Kamler ◽  
Iryna Levchenko ◽  
...  
Keyword(s):  
Refractive Index ◽  
Gallium Nitride ◽  
Production Process ◽  
Laser Diodes ◽  
Index Of Refraction ◽  
Aluminium Gallium Nitride ◽  
Process Yield ◽  
Index Contrast ◽  
Cladding Layers ◽  
Lattice Matched

Gallium nitride (GaN) doped with germanium at a level of 1020 cm−3 is proposed as a viable material for cladding layers in blue- and green-emitting laser diodes. Spectral reflectometry and ellipsometry are used to provide evidence of a reduced index of refraction in such layers. The refractive-index contrast to undoped GaN is about 0.990, which is comparable to undoped aluminium gallium nitride (AlGaN) with an aluminium composition of 6%. Germanium-doped GaN layers are lattice-matched to native GaN substrates; therefore, they introduce no strain, cracks, and wafer bowing. Their use, in place of strained AlGaN layers, will enable significant improvements to the production process yield.

scholarly journals Effect of sputtering power on optical Properties of RF sputtering deposited Ti6Al4V Thin Films

2019 ◽  
Vol 15 (33) ◽  
pp. 71-77
Author(s):  
Mohammed K. Khalaf
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Glass Substrate ◽  
Rf Sputtering ◽  
Rf Power ◽  
Sputtering Power

Ti6Al4V thin film was prepared on glass substrate by RFsputtering method. The effect of RF power on the optical propertiesof the thin films has been investigated using UV-visibleSpectrophotometer. It's found that the absorbance and the extinctioncoefficient (k) for deposited thin films increase with increasingapplied power, while another parameters such as dielectric constantand refractive index decrease with increasing RF power.

Study on Optical Properties of Silicon Oxycarbide Thin Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 482-484 ◽  
pp. 1307-1312
Author(s):  
Tao Chen ◽  
Duo Shu Wang
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Rf Magnetron Sputtering ◽  
Silicon Oxycarbide ◽  
Working Pressure ◽  
Sputtering Power

Silicon oxycarbide（SiCO）thin films is a kind of glassy compound materials, which possess many potential excellent properties such as thermal stability, wide energy band, high refractive index and high hardness, and have many potential applications in space. The preparation processes of SiCO thin films by RF magnetron sputtering with different substrate temperature, working pressure and sputtering power were studied. And various surface analysis methods were used to characterize the optical properties of SiCO thin films. The dependence of the properties on the process parameters was also studied. The tested properties of SiCO thin films deposited on K9 glass indicated that lower substrate temperature and sputtering power, higher working pressure could get SiCO thin films with better light penetration and the refractive index of SiCO thin films had a large varying region with the change of the process parameters. With different substrate temperature, working pressure or sputtering power, the maximum refractive index at 633nm（wavelength） are 2.20051, 2.12072 and 1.98959, respectively, and the minimum ones are 1.89426, 1.83176 and 1.8052, respective.

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