Deformation Characteristics and Ductile Fracture of 1040 Steel in Simple Upsetting of Solid Cylinders and Rings

1970 ◽  
Vol 92 (2) ◽  
pp. 391-398 ◽  
Author(s):  
Shiro Kobayashi

Experiments were conducted involving the upsetting of solid cylinders and rings of annealed SAE 1040 steel at room temperature for various end conditions. Measurements were made on the displacement distributions at the tool-workpiece interface, and on the development of barreling and strain variations at the free surface. Crack formation at the free surface was observed. The relationship between friction at the interface, deformation characteristics, and fracturing is discussed, and a tentative analysis is given for formulating the strains at the free surface, based on the experimental measurements for upsetting solid cylinders.

2012 ◽  
Vol 525-526 ◽  
pp. 357-360
Author(s):  
Pei Xiu Xia ◽  
Guang Ping Zou ◽  
Zhong Liang Chang

The effect of the interface slip is neglected in most studies on calculating deflection of sandwich beams. By taking a simply supported sandwich beams under uniformly distributed loads as an example, simplified analytical models of the interface slip are established, and corresponding clculation formulas of interface slip between steel panels and concrete and section curvatures are derived. The formula for deflection of sandwich beams are then presented. This formula reflects the relationship of influence each other between the interface slip and deflection.


2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.


Author(s):  
Xufei Fang ◽  
Hanna Bishara ◽  
Kuan Ding ◽  
Hanna Tsybenko ◽  
Lukas Porz ◽  
...  

2011 ◽  
Vol 261-263 ◽  
pp. 416-420 ◽  
Author(s):  
Fu Ping Jia ◽  
Heng Lin Lv ◽  
Yi Bing Sun ◽  
Bu Yu Cao ◽  
Shi Ning Ding

This paper presents the results of elevated temperatures on the compressive of high fly ash content concrete (HFCC). The specimens were prepared with three different replacements of cement by fly ash 30%, 40% and 50% by mass and the residual compressive strength was tested after exposure to elevated temperature 250, 450, 550 and 650°C and room temperature respectively. The results showed that the compressive strength apparently decreased with the elevated temperature increased. The presence of fly ash was effective for improvement of the relative strength, which was the ratio of residual compressive strength after exposure to elevated temperature and ordinary concrete. The relative compressive strength of fly ash concrete was higher than those of ordinary concrete. Based on the experiments results, the alternating simulation formula to determine the relationship among relative strength, elevated temperature and fly ash replacement is developed by using regression of results, which provides the theoretical basis for the evaluation and repair of HFCC after elevated temperature.


1988 ◽  
Vol 126 ◽  
Author(s):  
S.-Tong Lee ◽  
G. Braunstein ◽  
Samuel Chen

ABSTRACTThe defect and atomic profiles for MeV implantation of Si in GaAs were investigated using He++ channeling, TEM, and SIMS. Doses of 1–10 × 1015Si/cm2 at 1–3 MeV were used. MeV implantation at room temperature rendered only a small amount of lattice disorder in GaAs. Upon annealing at 400°C for 1 h or 800°C for 30 a, we observed a ‘defect-free’ surface region (- 1 μ for 3 MeV implant). Below this region, extensive secondary defects were formed in a band which was 0.7 μ wide and centered at 2 μ for 3 MeV implant. These defects were mostly dislocations lying in the [111] plane. SIMS depth profiles of Si implants showed the Si peak to be very close to the peak position of the defects. The experimental profiles of Si were compared to the TRIM calculation; generally good agreement existed among the peak positions.


1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.


2021 ◽  
Vol 1036 ◽  
pp. 45-52
Author(s):  
Jiao Yang ◽  
Xin Yu Wang ◽  
Peng Kai Li ◽  
Ji Fa Huang ◽  
Peng Hao Deng

X-ray diffractometer, field emission scanning electron microscope (SEM, Hitachi S-4800), laser confocal micro-region Raman spectrometer and vibration sample magnetometer were used to systematically study the effects of polyethyleneimine concentrations and exposure time on the morphology and size of ZnO nanowire arrays. The photoelectric property and the relationship between the morphology of nanowire arrays and ferromagnetism at room temperature were also analyzed. Under 15 min exposure time, when the polyethyleneimine concentration is 2.25 g / L, the obtained ZnO nanowire array film exhibits the smallest size, the optimal density and vertical orientation. According to the study of luminescence and room temperature magnetism, it is shown that the optical and ferromagnetic property are related to the variation tendency of oxygen defects and surface defects of the ZnO nanowires.


1993 ◽  
Vol 264 (6) ◽  
pp. H1788-H1797 ◽  
Author(s):  
M. Kimura ◽  
H. H. Dietrich ◽  
V. H. Huxley ◽  
D. R. Reichner ◽  
R. G. Dacey

We have developed a new method for quantification of arteriolar hydraulic conductivity (Lp) from isolated rat brain vessels. The volume flux of water per unit surface area across the arteriole wall (Jv/S) was assessed from measurements of silicon oil drop movement within an occluded vessel at two to three pressures (between 20 and 70 mmHg); the Lp was derived from the slope of the relationship between Jv/S and applied pressure. Lp was measured in isolated cerebral arterioles 1) at room temperature (22 degrees C) without spontaneous vessel tone (control Lp; n = 11), 2) at room temperature with 10(-4) M adenosine (n = 5), and 3) at 37 degrees C with vessels dilated submaximally with 10(-4) M adenosine (n = 6). Lp at 22 degrees C without adenosine was 13.2 +/- 4.2 x 10(-9) (+/- SE) cm.s-1.cmH2O-1 for all vessels studied. Lp values ranged from 1.2 to 44.1 x 10(-9) cm.s-1.cmH2O-1 with a median value that was 5.9 x 10(-9) cm.s-1.cmH2O-1. Lp increased significantly (on average, 2.6-fold) with adenosine at 37 degrees C but not with adenosine at 22 degrees C. Control Lp bore no relationship to either the development of spontaneous tone or the diameter response to pH change, two recognized indicators of vessel viability.


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