Unileg Thermoelectric Module Comprised by Coated Halide-Perovskite Thin Film

2020 ◽  
Vol 142 (7) ◽  
Author(s):  
Shrikant Saini ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
Shuzi Hayase ◽  
Koji Miyazaki
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Room Temperature ◽  
Maximum Output Power ◽  
Thermoelectric Module ◽  
Direct Conversion ◽  
Maximum Output ◽  
X Ray Diffraction ◽  
X Ray

Abstract The direct conversion of thermal energy into electricity is possible by thermoelectric effect. CsSnI3 perovskite has shown a way with its intrinsic ultralow thermal conductivity and large Seebeck coefficient. In this work, CsSnI3 thin films were optimized. Thin films were structurally and chemically characterized using X-ray diffraction (XRD) and scanning electron microscope (SEM). Thermoelectric properties such as electrical conductivity, Seebeck coefficient, and thermal conductivity were measured near room temperature (300 K). CsSnI3 thin films unileg thermoelectric modules were fabricated on a glass substrate. The maximum output power is obtained about 0.8 nW for five legs (25 mm × 3 mm × 600 nm) modules for the temperature difference of about 5 °C.

Growth of halide perovskites thin films for thermoelectric applications

MRS Advances ◽  
2019 ◽  
Vol 4 (30) ◽  
pp. 1719-1725 ◽  
Author(s):  
Shrikant Saini ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
Shuzi Hayase ◽  
Koji Miyazaki
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Cost Effective ◽  
Thermoelectric Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Halide Perovskites

ABSTRACTThermoelectric materials can play an important role to develop a sustainable energy source for internet of things devices near room temperature. In this direction, it is important to have a thermoelectric material with high thermoelectric performance. Cesium tin triiodide (CsSnI3) single crystal perovskite has shown high value of Seebeck coefficient and ultra low thermal conductivity which are necessary conditions for high thermoelectric performance. Here, we report the thermoelectric response of CsSnI3 thin films. These films are prepared by cost effective wet spin coating process at different baking temperature. Films were characterized using X-ray diffraction and scanning electron microscopy. In our case, films baked at 130°C for 5 min have shown the best thermoelectric performance at room temperature with: Seebeck coefficient 115 μV/K and electrical conductivity 124 S/cm, thermal conductivity 0.36 W/m·K and figure of merit ZT of 0.137.

Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1631-1636 ◽  
Author(s):  
Boya Cui ◽  
D. Bruce Buchholz ◽  
Li Zeng ◽  
Michael Bedzyk ◽  
Robert P. H. Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Room Temperature ◽  
Storage Time ◽  
Laser Deposition ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
3Ω Method ◽  
X Ray

ABSTRACTThe cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

Uni-Leg Thermoelectric Module Comprised by Coated Hybrid-Perovskite Thin Film

2019 ◽  
Author(s):  
Shrikant Saini ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
Shuzi Hayase ◽  
Koji Miyazaki
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Flexible Electronics ◽  
Thermoelectric Module ◽  
Electrical Energy ◽  
Maximum Output ◽  
Thermoelectric Modules ◽  
Wet Process

Abstract Thermoelectric materials can convert thermal energy into electrical energy without any moving part which leads its path of application to the era of printed and flexible electronics. CsSnI3 perovskite can be a promising thermoelectric material for the next-generation energy conversion due to its intrinsic ultra-low thermal conductivity and large Seebeck coefficient but enhancement of electrical conductivity is still required. CsSnI3 can be prepared by wet process which can reduce the cost of flexible thermoelectric module. In this work, CsSnI3 thin films were fabricated by spin coating wet process. Thin films were structurally and chemically characterized using XRD and SEM. Thermoelectric properties such as electrical conductivity, Seebeck coefficient, and thermal conductivity were measured at 300 K. Uni-leg thermoelectric modules were fabricated on a glass substrate using CsSnI3 thin films. The maximum output is about 0.8 nW for 5 legs (25 mm × 3 mm × 600 nm) modules for the temperature difference of about 5°C. These results will open a new pathway to thermoelectric modules for flexible electronics in spite of low output power.

scholarly journals Influence of Deposition Rate on the Thermoelectric Properties of Sb2Te3Thin Films by Thermal Evaporation Method

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Wei Chen
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Si Substrates ◽  
Cooling Devices

Thermoelectric (TE) materials are crucial because they can be used in power generation and cooling devices. Sb2Te3-based compounds are the most favorable TE materials because of their excellent figure of merit at room temperature. In this study, Sb2Te3thin films were prepared on SiO2/Si substrates through thermal evaporation. The influence of the evaporation current on the microstructures and TE properties of Sb2Te3thin films were investigated. The crystalline structures and morphologies of the thin films were analyzed using X-ray diffraction and field emission scanning electron microscopy. The Seebeck coefficient, electrical conductivity, and power factor (PF) were measured at room temperature. The experimental results showed that the Seebeck coefficient increased and conductivity decreased with increasing evaporation current. The Seebeck coefficient reached a maximum of 387.58 μV/K at an evaporation current of 80 A. Conversely, a PF of 3.57 µW/cmK2was obtained at room temperature with evaporation current of 60 A.

Thermoelectric Properties and Power Generation of p–Ca3Co4O9 and n–Sr0.87La0.13TiO3 Thermoelectric Modules

2016 ◽  
Vol 675-676 ◽  
pp. 679-682 ◽  
Author(s):  
Kunchit Singsoog ◽  
Chanchana Thanachayanont ◽  
Anek Charoenphakdee ◽  
Tosawat Seetawan
Keyword(s):  
Thermal Conductivity ◽  
Power Generation ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Maximum Output Power ◽  
Thermoelectric Module ◽  
Maximum Output ◽  
Te Modules ◽  
Matching Load

The Ca3Co4O9 (CCO) and Sr0.87La0.13TiO3 (SLTO) are good property of oxide thermoelectric (TE) materials. They synthesized by solid state reaction (SSR) method to study thermoelectric properties and fabrication of thermoelectric module. It was found that, synthesis of CCO shows that Seebeck coefficient, electrical resistivity, thermal conductivity and values are 130 μV K–1, 8.31 mΩ cm, 0.82 W m–1 K–1 and 0.08, respectively at 473 K. The Seebeck coefficient, electrical resistivity, thermal conductivity and ZT values of SLTO are –359 μV K–1, 2.9 mΩ m, 18.09 W m–1 K–1 and 1.13×10–3, respectively at 473 K. TE modules of CCO and SLTO were fabricated by ultra sonic soldering method. The power generation of TE modules were measured with temperature difference (ΔT) of 10–180 K. The 1 pair and 2 pairs TE modules for a maximum power generation of matching load are 19 k and 30 k, respectively. The maximum output power of 2 pairs TE module is larger than 1 pair TE module about two times.

Structure and Conductivity of Iodine-Doped C60 Thin Films

1994 ◽  
Vol 359 ◽  
Author(s):  
Jun Chen ◽  
Haiyan Zhang ◽  
Baoqiong Chen ◽  
Shaoqi Peng ◽  
Ning Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Thermally Activated ◽  
Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

N-type Ba0.2Co4Sb11.5Te0.5: Optimization of thermoelectric properties by different pressures

2019 ◽  
Vol 33 (03) ◽  
pp. 1950027 ◽  
Author(s):  
Jiaxiang Chen ◽  
Xiaopeng Jia ◽  
Yuewen Zhang ◽  
Haiqiang Liu ◽  
Baomin Liu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Seebeck Coefficient ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Absolute Value ◽  
X Ray ◽  
Coefficient Increase ◽  
Maximum Power Factor ◽  
Scanning Electron

The polycrystalline skutterudite [Formula: see text] were successfully synthesized from 1.5 GPa to 3.5 GPa by the high pressure and high temperature (HPHT) method. Negative Seebeck coefficient confirmed the n-type conductivity of all samples. The phase compositions of samples were investigated by X-ray diffraction (XRD) and the microstructures were observed by scanning electron microscopy (SEM). It was found that the grains appeared smaller and the grain boundaries became more abundant when pressures were higher. We measured the electrical properties from room temperature to 723 K. Both the electrical resistivity and absolute value of Seebeck coefficient increase with the increasing synthetic pressure. At 723 K, the maximum power factor of [Formula: see text] was obtained for the sample synthesized under 3 GPa. The maximum ZT value of 0.61 was reached by [Formula: see text] synthesized under 3 GPa and measured at 723 K.

Formation of ZnO Doped with Mn Thin Film by Electrodeposition and Magnetic Behaviour.

2005 ◽  
Vol 879 ◽  
Author(s):  
M. Abid ◽  
C. Terrier ◽  
J-P Ansermet ◽  
K. Hjort
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Magnetic Behaviour ◽  
Spectroscopic Methods ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped ◽  
Weak Ferromagnetic

AbstractFollowing the theory, ferromagnetism is predicted in Mn- doped ZnO, Indeed, ferromagnetism above room temperature was recently reported in thin films as well as in bulk samples made of this material. Here, we have prepared Mn doped ZnO by electrodeposition. The samples have been characterized by X-ray diffraction and spectroscopic methods to ensure that the dopants are substitutional. Some samples exhibit weak ferromagnetic properties at room temperature, however to be useful for spintronics this material need additional carriers provided by others means.

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