Fabrication of Thermoelectric La0.95Sr0.05CoO3 Thin Film and Seebeck Coefficient Measurement

2011 ◽  
Author(s):  
Weihe Xu ◽  
Qi Chen ◽  
Yong Shi ◽  
Hamid Hadim
Keyword(s):  
Thin Film ◽  
Seebeck Coefficient ◽  
Spin Coating ◽  
Complex Oxide ◽  
Perovskite Oxides ◽  
Voltage Output ◽  
Custom Made ◽  
Coefficient Measurement ◽  
Micro Electromechanical System ◽  
P Type

The P-type perovskite oxides La1-xSrxCoO3 are a promising group of complex oxide thermoelectric (TE) materials because of its a higher Seebeck coefficient. In this paper, the La0.95Sr0.05CoO3 thin film was prepared by spin coating. A custom-made MEMS (micro-electromechanical system) based device was used to measure the voltage output and Seebeck coefficient of the thin film. The measured Seebeck coefficient of the thin film was 350 μV/K.

Fabrication of Thermoelectric La0.95Sr0.05CoO3 Thin Film and Seebeck Coefficient Measurement

2011 ◽  
Vol 3 (4) ◽  
Author(s):  
Weihe Xu ◽  
Qi Chen ◽  
Hamid Hadim ◽  
Yong Shi
Keyword(s):  
Thin Film ◽  
Seebeck Coefficient ◽  
Spin Coating ◽  
Complex Oxide ◽  
Voltage Output ◽  
Custom Made ◽  
Coefficient Measurement ◽  
Oxide Thermoelectric Materials ◽  
Micro Electromechanical System ◽  
P Type

The p-type perovskite oxides La1-xSrxCoO3 are a promising group of complex oxide thermoelectric materials because of its higher Seebeck coefficient. In this paper, the La0.95Sr0.05CoO3 thin film was prepared by spin coating. A custom-made micro-electromechanical system based device was used to measure the voltage output and Seebeck coefficient of the thin film. The measured Seebeck coefficient of the thin film was 350 μV/K.

Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

2018 ◽  
Vol 6 (6) ◽  
pp. 1393-1398 ◽  
Author(s):  
Shengbin Nie ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
P Type

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs).

Bi-Sb-Te Based Thin Film Thermoelectric Generator

2012 ◽  
Vol 538-541 ◽  
pp. 60-63 ◽  
Author(s):  
Zhao Kun Cai ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Xing Min Cai ◽  
Dong Ping Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Seebeck Coefficient ◽  
Output Power ◽  
Power Factor ◽  
Thermoelectric Generator ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thermoelectric Thin Films ◽  
P Type

N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films have been prepared by RF and DC co-sputtering. The Seebeck coefficient of n-type Bi2Te3 and p-type Sb2Te3 thin films is about -122 μVK-1 and 108 μVK-1, the power factor is about 0.82×10-3 Wm-1K-2 and 1.60×10-3 Wm-1K-2. Then, the films have been selected to fabricate the thin film thermoelectric generator. The results show that the open-circuit voltage of 12.2 mV and the output power of 3.32 μW are obtained for a thin film generator with the temperature difference at 60 K.

Synthesis of ZnO Thin Film on Porous Silicon by Spin Coating in Various Low Molarities Precursor

2013 ◽  
Vol 701 ◽  
pp. 167-171 ◽  
Author(s):  
Kevin Alvin Eswar ◽  
Azlinda Ab Azlinda ◽  
F.S. Husairi ◽  
M. Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Porous Silicon ◽  
Spin Coating ◽  
Substrate Surface ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Coating Method ◽  
P Type

Zinc acetate dehydrate as starting material along with diethanolamine as stabilizer, and isopropyl as a solvent were used to synthesis ZnO thin films in different low molarities. Sol-gel spin coating method was used in depositing ZnO on porous silicon substrate surface. In other to prepare substrate, p-type silicon wafer was etched by dilute hydrofluoric acid to modify the surface becomes porous. Field Emission Scanning Electron Microscopy (FESEM) was employed to study the surface morphology. It is found that ZnO thin films were successfully deposited on the substrates which are composed of ZnO nanoparticles with size ~16 nm to ~22nm. Atomic Force Microscopy (AFM) was used to investigate the surface roughness of thin film. The result shows that the surface roughness is increase as the increases of molarities. Photoluminescence (PL) spectra were done in range of 350 nm to 800 nm. The result shows peaks belonging to ZnO, ZnO defects, and porous silicon respectively are appeared.

scholarly journals Apparatus for Seebeck coefficient measurement of wire, thin film, and bulk materials in the wide temperature range (80–650 K)

2019 ◽  
Vol 90 (10) ◽  
pp. 104901 ◽  
Author(s):  
Ashish Kumar ◽  
Ashutosh Patel ◽  
Saurabh Singh ◽  
Asokan Kandasami ◽  
D. Kanjilal
Keyword(s):  
Thin Film ◽  
Seebeck Coefficient ◽  
Wide Temperature Range ◽  
Bulk Materials ◽  
Temperature Range ◽  
Coefficient Measurement

Thermoelectric Properties P-Type Si-20 at % Ge by Addition of TiN Nanoparticles

2009 ◽  
Vol 610-613 ◽  
pp. 399-402
Author(s):  
Zhong Wang ◽  
Hui Chen ◽  
Ying Chu ◽  
Yan Cheng ◽  
Lei Zhu ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Electrical Power ◽  
Nitrogen Plasma ◽  
Alloy Composite ◽  
Alloy Matrix ◽  
Sige Alloy ◽  
Scattering Center ◽  
Tin Nanoparticles ◽  
Coefficient Measurement ◽  
P Type

SiGe alloy composite material including TiN nanoparticle were prepared. The TiN nanoparticles as the inert scattering center were fabricated by Nitrogen plasma-metal reaction. The sintered samples were characterized by electrical resistivity and seebeck coefficient measurement. Adding nanophase inclusion into the SiGe alloy matrix, the Seebeck coefficient increased, the electrical conductivity decreased and the electrical power factor only slightly reduced.

THERMOELECTRIC CHARACTERISTICS OF THE THERMOPILE SENSORS PROCESSED WITH THE ELECTRODEPOSITED Bi–Te AND Sb–Te THIN FILMS

2010 ◽  
Vol 17 (03) ◽  
pp. 311-316 ◽  
Author(s):  
MIN-YOUNG KIM ◽  
TAE-SUNG OH
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Seebeck Coefficient ◽  
Glass Substrate ◽  
Constant Voltage ◽  
Thermopile Sensor ◽  
P Type

A thermopile sensor composed of 196 pairs of p–n thin film legs was processed on a glass substrate by using successive electrodeposition of the n-type Bi–Te and the p-type Sb–Te thin films. The 5.3-μm thick Bi–Te film, electrodeposited at a constant voltage of -50 mV in the 50-mM electrolyte with the Bi/(Bi + Te) mole ratio of 0.5, exhibited a Seebeck coefficient of -67 μV/K. The 5.2-μm thick Sb–Te film, electrodeposited at a constant voltage of 20 mV in the 70-mM solution with the Sb/(Sb + Te) mole ratio of 0.9, possessed a Seebeck coefficient of 63 μV/K. The thermopile sensor exhibited the sensitivities of 13.1 mV/K with temperature differences smaller than 9 K and of 27.3 mV/K with temperature differences larger than 9 K respectively, across the hot and cold ends.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Sign in / Sign up

Export Citation Format

Share Document