THERMOELECTRIC CHARACTERISTICS OF THE THERMOPILE SENSORS PROCESSED WITH THE ELECTRODEPOSITED Bi–Te AND Sb–Te THIN FILMS

2010 ◽  
Vol 17 (03) ◽  
pp. 311-316 ◽  
Author(s):  
MIN-YOUNG KIM ◽  
TAE-SUNG OH
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Seebeck Coefficient ◽  
Glass Substrate ◽  
Constant Voltage ◽  
Thermopile Sensor ◽  
P Type

A thermopile sensor composed of 196 pairs of p–n thin film legs was processed on a glass substrate by using successive electrodeposition of the n-type Bi–Te and the p-type Sb–Te thin films. The 5.3-μm thick Bi–Te film, electrodeposited at a constant voltage of -50 mV in the 50-mM electrolyte with the Bi/(Bi + Te) mole ratio of 0.5, exhibited a Seebeck coefficient of -67 μV/K. The 5.2-μm thick Sb–Te film, electrodeposited at a constant voltage of 20 mV in the 70-mM solution with the Sb/(Sb + Te) mole ratio of 0.9, possessed a Seebeck coefficient of 63 μV/K. The thermopile sensor exhibited the sensitivities of 13.1 mV/K with temperature differences smaller than 9 K and of 27.3 mV/K with temperature differences larger than 9 K respectively, across the hot and cold ends.

Bi-Sb-Te Based Thin Film Thermoelectric Generator

2012 ◽  
Vol 538-541 ◽  
pp. 60-63 ◽  
Author(s):  
Zhao Kun Cai ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Xing Min Cai ◽  
Dong Ping Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Seebeck Coefficient ◽  
Output Power ◽  
Power Factor ◽  
Thermoelectric Generator ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thermoelectric Thin Films ◽  
P Type

N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films have been prepared by RF and DC co-sputtering. The Seebeck coefficient of n-type Bi2Te3 and p-type Sb2Te3 thin films is about -122 μVK-1 and 108 μVK-1, the power factor is about 0.82×10-3 Wm-1K-2 and 1.60×10-3 Wm-1K-2. Then, the films have been selected to fabricate the thin film thermoelectric generator. The results show that the open-circuit voltage of 12.2 mV and the output power of 3.32 μW are obtained for a thin film generator with the temperature difference at 60 K.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Photoconductivity of Nanocomposite MEH-PPV: TiO2 Thin Films

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Glass Substrate ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Current Voltage ◽  
Current Voltage Characteristics

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.

Selective formation of cubic or tetragonal zirconia thin films of transparent, with no use of metal ion stabilizer by heating molecular precursor films under mild conditions

2021 ◽  
Vol 14 (02) ◽  
pp. 2151012
Author(s):  
Natangue Heita Shafudah ◽  
Hiroki Nagai ◽  
Mitsunobu Sato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quartz Glass ◽  
Glass Substrate ◽  
Metal Ion ◽  
Tetragonal Zirconia ◽  
Precursor Film ◽  
Quartz Glass Substrate ◽  
Molecular Precursor ◽  
Zirconia Thin Film

Cubic or tetragonal zirconia thin films of transparent and 100 nm thickness were selectively formed on a quartz glass substrate by heat-treating the molecular precursor films involving Zr(IV) complexes of nitrilotriacetic acid, at 500[Formula: see text]C in air for 1 h. A precursor solution was prepared by a reaction of the ligand and zirconium tetrabutoxide in alcohol under the presence of butylamine. By the addition of H2O2 or H2O into the solution, the spin-coated precursor films were converted to cubic zirconia thin films by the abovementioned procedure. Further, the identical phase was produced also in the case of the electro-sprayed precursor film which was formed by an addition of H2O2 into the solution. On the other hand, the tetragonal zirconia thin film was obtained from a precursor film formed by using a solution dissolving the original Zr(IV) complex of the ligand, without H2O2 nor H2O. The crystal structure of all thin films was determined by using both the X-ray diffraction (XRD) patterns and Raman spectra. Thus, the zirconia thin films of both crystals could be facilely and selectively obtained with no use of hetero-metal ion stabilizers. The XPS spectra of the thin films show that the O/Zr ratio of the cubic phase is 1.37 and slightly larger than tetragonal one (1.29), and also demonstrate that the nitrogen atoms, which may contribute to stabilize these metastable phases at room temperature, of about 5−7 atomic% was remained in the resultant thin films. The adhesion strengths of cubic zirconia thin film onto the quartz glass substrate was 68 MPa and larger than that of tetragonal one, when the precursor films were formed via a spin coating process. The optical and surface properties of the thin films were also examined in relation to the crystal systems.

scholarly journals Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1435
Author(s):  
Kaneez Fatima ◽  
Hadia Noor ◽  
Adnan Ali ◽  
Eduard Monakhov ◽  
Muhammad Asghar
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Silicon Germanium ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
The Past ◽  
High Power Factor ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Glass Substrate ◽  
Intrinsic Stress ◽  
Dc Magnetron Sputtering ◽  
Adhesion Properties ◽  
Sputtering Power

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

Investigation on V2O5 Thin Films Prepared by Spray Pyrolysis Technique

2018 ◽  
Vol 17 (03) ◽  
pp. 1760037 ◽  
Author(s):  
A. Nancy Anna Anasthasiya ◽  
K. Gowtham ◽  
R. Shruthi ◽  
R. Pandeeswari ◽  
B. G. Jeyaprakash
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Glass Substrate ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Xrd Pattern ◽  
Good Crystallinity ◽  
Solution Volume

The spray pyrolysis technique was employed to deposit V2O5 thin films on a glass substrate. By varying the precursor solution volume from 10[Formula: see text]mL to 50[Formula: see text]mL in steps of 10[Formula: see text]mL, films of various thicknesses were prepared. Orthorhombic polycrystalline V2O5 films were inferred from the XRD pattern irrespective of precursor solution volume. The micro-Raman studies suggested that annealed V2O5 thin film has good crystallinity. The effect of precursor solution volume on morphological and optical properties were analysed and reported.

Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

2018 ◽  
Vol 6 (6) ◽  
pp. 1393-1398 ◽  
Author(s):  
Shengbin Nie ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
P Type

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs).

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

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