Fabrication of an Antireflective Structure on a Lenticular Lens

Author(s):  
Katsuyuki Yatagawa ◽  
Masato Nakamura ◽  
Masaki Ono ◽  
Jun Taniguchi ◽  
Shin Hiwasa

Abstract In our previous study, various lenses with antireflective structures (ARSs) were fabricated by ultraviolet nanoimprint lithography (UV-NIL) and a thin flexible replica mold, which had ARSs. However, in the case of a lens with a large uneven surface such a lenticular lens, it is difficult to transfer an ARS. In this paper, the improvement of the transfer process for a lenticular lens with an ARS is investigated. A master mold of ARSs was fabricated by irradiating glassy carbon with an oxygen ion beam. A flexible replica mold with ARSs was transferred from the ARS master mold by UV-NIL. In this case, the thickness of the flexible replica mold was 210 μm. A lenticular lens with the reverse shape was also transferred from the original lenticular lens by UV-NIL. To add an ARS to the lenticular lens with the reverse shape, it was covered with a flexible replica mold coated with a UV-curable resin. In addition, the lenticular lens was placed on the back side of the flexible replica mold to contact the lens curve properly. Afterwards, the setting samples were pressed with a roll press and simultaneously UV-cured. After this roll press method was carried out, a lenticular lens with the reverse shape and an ARS was obtained. Using this mold, a lenticular lens with an ARS was replicated by UV-NIL and the reverse-shape mold with an ARS.

2018 ◽  
Vol 12 (5) ◽  
pp. 723-729
Author(s):  
Junpei Tsuchiya ◽  
Gen Nakagawa ◽  
Shin Hiwasa ◽  
Jun Taniguchi ◽  
◽  
...  

Ultraviolet nanoimprint lithography (UV-NIL) can be used to fabricate nanoscale patterns with high throughput. It is expected to serve as a low-cost technique for the production of items in large numbers. However, master molds for UV-NIL are expensive and laborious to produce, and there are problems associated with the deterioration of the master mold and damage to its nanopattern due to adhesion of the UV-curable resin. Consequently, the UV-curable resin has to combine low-viscosity characteristics for coatability with an antisticking property. Coating a master mold with a release layer is important in preventing damage to the master mold or adhesion between the mold and the UV-curable resin. However, the released layer deteriorates as the master mold is repeatedly used to fabricate nanopatterns. By contrast, the use of a replica mold is a valuable technique for preventing the deterioration of the master mold, and there have been several studies on the fabrication of replicas of master molds with the use of UV-curable resins. In many cases, the fabrication of nanopatterns with replica molds requires the use of a release agent. In a previous study, we developed a material for replica molds that does not require a release agent. This material consisted of a UV-curable resin with an antifouling effect that was prepared from cationically polymerizable UV-curable and epoxy-modified fluorinated resins. With the use of this material, replica molds with patterns of pillars or holes were fabricated with UV-NIL. The lifetime of the mold with the nanopattern of pillars was shorter than that with holes. In addition, the replica mold with the pillar-shaped nanopattern had numerous defects and allowed adhesion of the transfer resin after repeated efforts. Herein, we describe an improved release-agent-free hard replica mold. We transferred large numbers of nanopatterns of pillars from the replica mold, and evaluated the error rate and contact angle of our improved release-agent-free hard replica mold. The resulting release-agent-free replica mold with a nanopattern of pillars was capable of transferring up to 1000 sequential imprints. In addition, to improve the release properties of the transfer resin, we included an additive to the transfer resin that contained a reactive fluorinated material. This material improved the release properties of the transfer resin and mitigated the deterioration of the contact angle and increase in the error rate.


Author(s):  
Atsuhiro Furuta ◽  
Kazuki Honjo ◽  
Jun Taniguchi

Abstract In recent years, flexible electronic devices such as printed electronics are gathering attention. To make flexible connect between one circuit device and another circuit device, interposer is necessary. However, most of conventional interposers are not flexible, because there are made of silicon or glass substrate. To solve this problem, we have been developed fabrication process of flexible interposer. Master mold was fabricated by photolithography process. First, SU-8 resist was coated on silicon substrate with 5μm thickness. Then, photolithography process was carried out to SU-8 resist. After development, pillar shape master molds with diameters of 10 or 20 μm were obtained. After release coating of master molds, hole patterns for vias were transferred by UV nanoimprint lithography. The obtained hole patterns were diameter of 10 μm or 20 μm, and pitch of 21.0 μm and 40.1 μm, respectively. Next, these holes were filled with silver ink by roll press method. Then, sintering process was carried out to evaporate of solvent of silver ink. After that, flexible interposer was obtained. As a result, we have been succeeded in filling the holes array with silver ink. Obtained interposer vias, which were silver region, were 8.2 μm diameter and 3.3 μm height, or 20.3 μm diameter and 5.3 μm height for 10 mm square size.


2011 ◽  
Vol 1282 ◽  
Author(s):  
Shuji Kiyohara ◽  
Masaya Kumagai ◽  
Yoshio Taguchi ◽  
Yoshinari Sugiyama ◽  
Yukiko Omata ◽  
...  

ABSTRACTWe have investigated the nanopatterning of chemical vapor deposited (CVD) diamond films in room-temperature nanoimprint lithography (RT-NIL), using a diamond nanodot mold. We have proposed the use of polysiloxane as an electron beam (EB) mask and RT-imprint resist materials. The diamond molds of cylinder dot using the RT-NIL process were fabricated with polysiloxane oxide mask in EB lithography technology. The dot in minimum diameter is 500 nm. The pitch between the dots is 2 μm, and dot has a height of about 600 nm. It was found that the optimum imprinting conditions for the RT-NIL : time from spin-coating to imprinting t1 of 1 min , pressure time t2 of 5 min, imprinting pressure P of 0.5 MPa. The imprint depth obtained after the press under their conditions was 500 nm. We carried out the RT-NIL process for the fabrication of diamond nanopit arrays, using the diamond nanodot molds that we developed. The resulting diamond nanopit arrays with 500 nm-diameter and 200 nm-depth after the electron cyclotron resonance (ECR) oxygen ion beam etching were fabricated. The diameter of diamond nanopit arrays was in good agreement with that of the diamond nanodot mold.


2021 ◽  
Vol 34 (2) ◽  
pp. 133-138
Author(s):  
Takao Okabe ◽  
Katsuyuki Yatagawa ◽  
Kazuki Fujiwara ◽  
Jun Taniguchi

2016 ◽  
Vol 55 (6S1) ◽  
pp. 06GM01 ◽  
Author(s):  
Akira Tanabe ◽  
Takuya Uehara ◽  
Kazuro Nagase ◽  
Hiroaki Ikedo ◽  
Nobuya Hiroshiba ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1956
Author(s):  
Tetsuma Marumo ◽  
Shin Hiwasa ◽  
Jun Taniguchi

Ultraviolet nanoimprint lithography (UV-NIL) requires high durability of the mold for the mass production of nanostructures. To evaluate the durability of a line-patterned replica mold made of high-hardness UV curable resin, repetitive transfer and contact angle measurements of the replica mold were carried out. In the line patterns, as the contact angle decreases due to repeated transfer, capillary action occurs, and water flows along them. Therefore, it can be said that a mold with a line pattern exhibits an anisotropic contact angle because these values vary depending on the direction of the contact angle measurement. Subsequently, these anisotropic characteristics were investigated. It was determined that it was possible to predict the lifetime of line-and-space molds over repeated transfers. As the transcription was repeated, the contact angle along the line patterns decreased significantly before becoming constant. Moreover, the contact angle across the line pattern decreased slowly while maintaining a high contact angle with respect to the contact angle along the line pattern. The contact angle then decreased linearly from approximately 90°. The mold was found to be macroscopically defect when the values of the contact angle along the line pattern and the contact angle across the line pattern were close. Predicting the mold’s lifetime could potentially lead to a shortened durability evaluation time and the avoidance of pattern defects.


2018 ◽  
Vol 9 ◽  
pp. 2855-2882 ◽  
Author(s):  
Philip D Prewett ◽  
Cornelis W Hagen ◽  
Claudia Lenk ◽  
Steve Lenk ◽  
Marcus Kaestner ◽  
...  

Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled “Single Nanometre Manufacturing: Beyond CMOS”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.


2010 ◽  
Vol 87 (5-8) ◽  
pp. 1123-1126 ◽  
Author(s):  
J.D. Jambreck ◽  
H. Schmitt ◽  
B. Amon ◽  
M. Rommel ◽  
A.J. Bauer ◽  
...  

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