Thin-Film PVDF Sensor Based Monitoring of Cutting Forces in Peripheral End Milling

2012 ◽  
Author(s):  
Lei Ma ◽  
Shreyes N. Melkote ◽  
John B. Morehouse ◽  
James B. Castle ◽  
James W. Fonda ◽  
...  
Keyword(s):  
Thin Film ◽  
Polyvinylidene Fluoride ◽  
End Milling ◽  
Beam Theory ◽  
Dynamic Strain ◽  
Data Logging ◽  
Sensor Material ◽  
Sensor Module ◽  
Sensor Signals

A sensor module that integrates a thin film Polyvinylidene Fluoride (PVDF) piezoelectric strain sensor and an in situ data logging platform has been designed and implemented for monitoring of feed and transverse forces in the peripheral end milling process. The module, which is mounted on the tool shank, measures the dynamic strain(s) produced in the tool and logs the data into an on-board card for later retrieval. The close proximity between the signal source and the PVDF sensor(s) minimizes the attenuation and distortion of the signal along the transmitting path and provides high-fidelity signals. It also facilitates the employment of a first principles model based on Euler-Bernoulli beam theory and the constitutive equations of the piezoelectric sensor material to relate the in situ measured PVDF sensor signals to the feed and transverse forces acting on the tool. The PVDF sensor signals are found to compare well with the force signals measured by a platform type piezoelectric force dynamometer in peripheral end milling experiments.

Thin-Film PVDF Sensor-Based Monitoring of Cutting Forces in Peripheral End Milling

2012 ◽  
Vol 134 (5) ◽  
Author(s):  
Lei Ma ◽  
Shreyes N. Melkote ◽  
John B. Morehouse ◽  
James B. Castle ◽  
James W. Fonda ◽  
...  
Keyword(s):  
Thin Film ◽  
Polyvinylidene Fluoride ◽  
End Milling ◽  
Beam Theory ◽  
Dynamic Strain ◽  
Data Logging ◽  
Sensor Material ◽  
Sensor Module ◽  
Sensor Signals

A sensor module that integrates a thin film polyvinylidene fluoride (PVDF) piezoelectric strain sensor and an in situ data logging platform has been designed and implemented for monitoring of the feed and transverse forces in the peripheral end milling process. The module, which is mounted on the tool shank, measures the dynamic strain(s) produced in the tool and logs the data into an on-board card for later retrieval. The close proximity between the signal source and the PVDF sensor(s) minimizes the attenuation and distortion of the signal along the transmission path and provides high-fidelity signals. It also facilitates the employment of a first principles model based on the Euler–Bernoulli beam theory and constitutive equations of the piezoelectric sensor material to relate the in situ measured PVDF sensor signals to the feed and transverse forces acting on the tool. The PVDF sensor signals are found to compare well with the force signals measured by a platform-type piezoelectric force dynamometer in peripheral end milling experiments.

On-Line Monitoring of End Milling Forces Using a Thin Film Based Wireless Sensor Module

2010 ◽  
Author(s):  
Lei Ma ◽  
Shreyes N. Melkote ◽  
John B. Morehouse ◽  
James B. Castle ◽  
James W. Fonda
Keyword(s):  
Thin Film ◽  
End Milling ◽  
Beam Theory ◽  
Dynamic Strain ◽  
Sensor Signal ◽  
Sensor Material ◽  
Slot Milling ◽  
Feed Force ◽  
Sensor Module ◽  
Milling Forces

A sensor module that integrates a thin film PVDF piezoelectric strain sensor and a wireless data processing/transmitting platform has been designed and implemented for wireless monitoring of the feed force in the slot end milling process. The module, which is mounted on the tool shank, measures the dynamic strain produced in the tool and transmits data wirelessly to the receiver connected to a data acquisition computer. A first principles model based on the Euler-Bernoulli beam theory and constitutive equations of the piezoelectric sensor material is used to transform the wirelessly obtained data into the feed force acting on the tool in a slot milling operation. The wireless PVDF sensor signal is found to compare well with the expected (or theoretical) sensor signal computed from the measured feed force in slot milling experiments.

Application of a low-cost NDIR sensor module for measurements of in situ soil CO2 concentration

2020 ◽  
Author(s):  
Adrian Heger ◽  
Volker Kleinschmidt ◽  
Alexander Gröngröft ◽  
Lars Kutzbach ◽  
Annette Eschenbach
Keyword(s):  
Field Experiment ◽  
Laboratory Experiment ◽  
Low Cost ◽  
Co2 Concentration ◽  
Soil Conditions ◽  
Data Logging ◽  
Accuracy And Precision ◽  
Sensor Module ◽  
Long Time

<p>We applied the low-cost non-dispersive infrared sensor module K33 (ICB, Senseair, Sweden) for measurements of soil CO<sub>2</sub> concentration. We integrated the sensor module in a new soil probe suitable for in situ measurements of soil gas CO<sub>2</sub> concentration. Therefore, we covered the sensor module with epoxy resin. For continuous measurements, we connected our soil CO<sub>2</sub> probe to a microcontroller (MEGA 2560 Rev3, Arduino.cc, Italy) equipped with a data logging shield (Adalogger FeatherWing, Adafruit, USA). In a laboratory experiment, we evaluated the accuracy and precision of our soil CO<sub>2</sub> probe at changing temperature and humidity by comparison with the often used CO<sub>2</sub> probe GMP343 (Vaisala, Finland) as a reference. In a field experiment, we buried our soil CO<sub>2</sub> probe to test its performance under natural environmental conditions.</p><p>The result of the laboratory experiment is that our soil CO<sub>2</sub> probe compares well with the GMP343, even at maximum relative humidity. The accuracy (<0.1 % CO<sub>2</sub>) was below the accuracy given by the manufacturer. The field experiment demonstrated that our soil CO<sub>2</sub> probe provides high-quality measurements of soil CO<sub>2</sub> concentrations under in situ soil conditions. After retrieving it, it still measured with the same accuracy and precision as before.</p><p>In summary, we used the sensor module K33 for the first time to measure in situ soil CO<sub>2</sub> concentrations by integrating it into a newly developed probe. The cost-efficient availability of our CO<sub>2</sub> probe opens up the opportunity to carry out continuous soil CO<sub>2</sub> measurements over long time periods with simultaneously high spatial resolution.</p>

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

“In-Situ Raman Spectroscopy of Electronic Processes in Fullerene Thin Films

2002 ◽  
Vol 725 ◽  
Author(s):  
S.B. Phelan ◽  
B.S. O'Connell ◽  
G. Farrell ◽  
G. Chambers ◽  
H.J. Byrne
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Low Temperatures ◽  
In Situ Raman Spectroscopy ◽  
State Reduction ◽  
In Situ Raman ◽  
Linear Behavior ◽  
Current Voltage ◽  
Solid State Reduction

AbstractThe current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

Reordering and Crystallization of Silicon Carbide Amorphized by Neutron Irradiation

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystallization Kinetics ◽  
Neutron Irradiation ◽  
Onset Temperature ◽  
Kinetics Of Crystallization ◽  
Crystallization Onset Temperature ◽  
Crystallization Onset ◽  
Kinetics Of

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.

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