Effect of rapid thermal annealing temperature on the formation of CoSi studied by x-ray photoelectron spectroscopy and micro-Raman spectroscopy

ABSTRACTThe interfacial reaction between 10 nm Ni(Pt ∼0, 5, 10 at.%) and (100) Si0.75Ge0.25 substrate after rapid thermal annealing between 400 and 800°C has been studied in detail using Micro- Raman spectroscopy. Only monogermanosilicide phase was detected in the temperature range investigated. The evolution of a broad Ni(Pt)SiGe Raman peak into two distinct peaks with increasing annealing temperature is attributed to a Ge out-diffusion from the germanosilicide grains. In addition, Raman spectroscopy further proves that depletion of Ge concentration in the Ni(Pt)SiGe grains reduces at higher temperature by the addition of Pt. The above phenomena were further supported by X-ray diffraction method.

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Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

10.1063/1.4915417 ◽

2015 ◽

Cited By ~ 1

Author(s):

Nupur Saxena ◽

Pragati Kumar ◽

Vinay Gupta

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Annealing Temperature ◽

Sio2 Matrix ◽

Si Nanocrystals ◽

Rapid Thermal Annealing Temperature

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Ajustement par recuits rapides RTA (rapid thermal annealing) des contraintes dans des couches minces de tungstène utilisées comme absorbant pour des masques à rayons X

Canadian Journal of Physics ◽

10.1139/p91-074 ◽

1991 ◽

Vol 69 (3-4) ◽

pp. 451-455 ◽

Cited By ~ 1

Author(s):

H. Lafontaine ◽

J. F. Currie ◽

S. Boily ◽

M. Chaker ◽

H. Pépin

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Annealing Temperature ◽

Rf Power ◽

X Ray ◽

Stress Changes ◽

Different Temperatures ◽

Absorbing Layer ◽

Good Agreement ◽

Sputtering System

Tungsten thin films are deposited with a triode sputtering system in order to obtain an absorbing layer for X-ray masks. The mechanical stress is studied as a function of different pressure and RF power conditions during deposition. Rapid thermal annealing at different temperatures and durations is performed in order to produce films under low compressive stress. We observe that the stress changes occur over the time scale of seconds at the annealing temperature and that the corresponding activation energies are low (60 meV). Grain growth in a preferred orientation explains the observed changes in stress. The magnitude in the change of stress is in good agreement with a model proposed by Hoffman et al. relating the stress to grain size and grain boundary dimensions. [Journal translation]

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Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-387-271 ◽

1995 ◽

Vol 387 ◽

Cited By ~ 1

Author(s):

Po-ching Chen ◽

Klaus Yung-jane Hsu ◽

Joseph J. Loferski ◽

Huey-liang Hwang

Keyword(s):

Low Temperature ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Photoelectron Spectroscopy ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Plasma Oxidation ◽

X Ray ◽

Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

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Metal Deposition on Laser Modified Teflon Surfaces

MRS Proceedings ◽

10.1557/proc-385-239 ◽

1995 ◽

Vol 385 ◽

Cited By ~ 3

Author(s):

Stefan Lätsch ◽

Hiroyuki Hiraoka ◽

Joachim Bargon

Keyword(s):

Raman Spectroscopy ◽

Photoelectron Spectroscopy ◽

Deposition Process ◽

Metal Deposition ◽

Polymer Surfaces ◽

Good Adhesion ◽

X Ray ◽

Micro Raman Spectroscopy ◽

Polymer Adhesion ◽

Secondary Ion

ABSTRACTCu, Ni, and Au were deposited with defined patterns and good adhesion by electroless plating, e-beam evaporation, and sputtering onto Teflon (polytetrafluoroethylene, PTFE), Teflon ET (PTFE-co-ethylene), Teflon FEP (PTFE-co-hexafluoropropylene) and Teflon PFA (PTFE-coperfluoroalkoxy vinyl ether) surfaces. The polymers had been irradiated in a tetramethyl – ammonium hydoxide solution (TMAH) by a Nd:YAG laser at 266 rim and by an excimer laser at 248 nrm prior to the metal deposition process. Both, the treated and virgin polymer surfaces were characterized by x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and Micro-Raman spectroscopy. The increased metal to polymer adhesion at the interface was found to be due to chemical changes and is in the order Ni > Cu ≅ Au.

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Structural, Electrical, and Optical Properties of AZO Thin Films Subjected to Rapid Thermal Annealing Temperature

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2010.23.4.280 ◽

2010 ◽

Vol 23 (4) ◽

pp. 280-286 ◽

Cited By ~ 1

Author(s):

Jae-Yong Jung ◽

Shin-Ho Cho

Keyword(s):

Thin Films ◽

Optical Properties ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Annealing Temperature ◽

Electrical And Optical Properties ◽

Rapid Thermal Annealing Temperature

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Near-IR Emitting Si Nanocrystals Fabricated by Thermal Annealing of SiNx/Si3N4 Multilayers

Applied Sciences ◽

10.3390/app9224725 ◽

2019 ◽

Vol 9 (22) ◽

pp. 4725

Author(s):

D. M. Zhigunov ◽

A. A. Popov ◽

Yu. M. Chesnokov ◽

A. L. Vasiliev ◽

A. M. Lebedev ◽

...

Keyword(s):

Thermal Annealing ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

X Ray ◽

Near Ir ◽

Transmission Electron ◽

Si Nanocrystals ◽

Mean Size ◽

The One ◽

Multilayered Thin Films

Silicon nanocrystals in silicon nitride matrix are fabricated by thermal annealing of SiNx/Si3N4 multilayered thin films, and characterized by transmission electron microscopy, X-ray reflectivity and diffraction analysis, photoluminescence and X-ray photoelectron spectroscopy techniques. Si nanocrystals with a mean size of about 4 nm are obtained, and their properties are studied as a function of SiNx layer thickness (1.6–2 nm) and annealing temperature (900–1250 °C). The effect of coalescence of adjacent nanocrystals throughout the Si3N4 barrier layers is observed, which results in formation of distinct ellipsoidal-shaped nanocrystals. Complete intermixing of multilayered film accompanied by an increase of nanocrystal mean size for annealing temperature as high as 1250 °C is shown. Near-IR photoluminescence with the peak at around 1.3–1.4 eV is detected and associated with quantum confined excitons in Si nanocrystals: Photoluminescence maximum is red shifted upon an increase of nanocrystal mean size, while the measured decay time is of order of microsecond. The position of photoluminescence peak as compared to the one for Si nanocrystals in SiO2 matrix is discussed.

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Effects of Rapid Thermal Annealing on SiNx Capped MBE GaAs

MRS Proceedings ◽

10.1557/proc-262-905 ◽

1992 ◽

Vol 262 ◽

Author(s):

Akira Ito ◽

Akira Usami ◽

Hiroyuki Ueda ◽

Hiroyuki Kano ◽

Takao Wada

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Photoelectron Spectroscopy ◽

Deep Level ◽

Error Function ◽

X Ray ◽

Molecular Beam Epitaxial ◽

Complementary Error Function ◽

Cap Layer ◽

Transient Spectroscopy

ABSTRACTEffects of rapid thermal annealing (RTA) with a SiNx encapsulant on molecular beam epitaxial GaAs are studied with deep level transient spectroscopy (DLTS) measurements and x-ray photoelectron spectroscopy (XPS) measurements. The RTA was performed at various temperatures form 800°C to 1100°C for 6sec. The electron trap EL2 is produced by the RTA above 850°C The EL2 depth profile produced after the RTA is fitted with a complementary error function. The SiNx cap layer is more effective to prevent the formation of the EL2 than the SiO* cap layer during the RTA, because the critical temperature of the SiNx cap where the EL2 concentration starts to increase is higher than that of the SiOx cap. Slight increase of the oxidized Ga atoms is observed after the RTA near the cap surface. The enhancement of the EL2 trap is discussed considering the outdiffusion of Ga atoms into the cap layer during the RTA.

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Micro-Nano Surface Characterization and Bioactivity of a Calcium Phosphate-Incorporated Titanium Implant Surface

Journal of Functional Biomaterials ◽

10.3390/jfb12010003 ◽

2021 ◽

Vol 12 (1) ◽

pp. 3

Author(s):

Fausto Zamparini ◽

Carlo Prati ◽

Luigi Generali ◽

Andrea Spinelli ◽

Paola Taddei ◽

...

Keyword(s):

Raman Spectroscopy ◽

Calcium Phosphate ◽

Photoelectron Spectroscopy ◽

Surface Characterization ◽

Textured Surface ◽

Implant Surface ◽

Mineral Layer ◽

X Ray ◽

Micro Raman Spectroscopy ◽

Carbonated Apatite

The surface topography of dental implants and micro-nano surface characterization have gained particular interest for the improvement of the osseointegration phases. The aim of this study was to evaluate the surface micro-nanomorphology and bioactivity (apatite forming ability) of Ossean® surface, a resorbable blast medium (RBM) blasted surface further processed through the incorporation of a low amount of calcium phosphate. The implants were analyzed using environmental scanning electronic microscopy (ESEM), connected to Energy dispersive X-ray spectroscopy (EDX), field emission gun SEM-EDX (SEM-FEG) micro-Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) before and after immersion in weekly refreshed Hank’s balanced salt solution (HBSS) for 28 days. The analysis of the samples before immersion showed a moderately rough surface, with micropits and microgrooves distributed on all of the surface; EDX microanalysis revealed the constitutional elements of the implant surface, namely titanium (Ti), aluminum (Al) and vanadium (V). Limited traces of calcium (Ca) and phosphorous (P) were detected, attributable to the incorporated calcium phosphate. No traces of calcium phosphate phases were detected by micro-Raman spectroscopy. ESEM analysis of the implant aged in HBSS for 28 days revealed a significantly different surface, compared to the implant before immersion. At original magnifications <2000×, a homogeneous mineral layer was present on all the surface, covering all the pits and microgrooves. At original magnifications ≥10,000×, the mineral layer revealed the presence of small microspherulites. The structure of these spherulites (approx. 2 µm diameter) was observed in nanoimmersion mode revealing a regular shape with a hairy-like contour. Micro-Raman analysis showed the presence of B-type carbonated apatite on the implant surface, which was further confirmed by XPS analysis. This implant showed a micro-nano-textured surface supporting the formation of a biocompatible apatite when immersed in HBSS. These properties may likely favor bone anchorage and healing by stimulation of mineralizing cells.

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