Two-dimensional delineation of shallow junctions in silicon by selective etching of transmission electron microscopy cross sections

1992 ◽  
Vol 10 (1) ◽  
pp. 491 ◽  
Author(s):  
Hans Cerva
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sections ◽  
Selective Etching ◽  
Two Dimensional ◽  
Transmission Electron ◽  
Shallow Junctions ◽  
Transmission Electron Microscopy Cross

Edge dislocations in fibrous grunerite

1981 ◽  
Vol 44 (335) ◽  
pp. 287-291
Author(s):  
E. J. W. Whittaker ◽  
B. A. Cressey ◽  
J. L. Hutchison
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cross Sections ◽  
The Other ◽  
Two Dimensional ◽  
Equal Frequency ◽  
Burgers Vector ◽  
Transmission Electron ◽  
Edge Dislocations

AbstractSections perpendicular to [001] of ion-thinned specimens of fibrous grunerite (amosite) have been examined by high-resolution transmission electron microscopy. In this orientation, two kinds of dislocation have been observed with about equal frequency. One lies on [001] and has a Burgers vector a. The other is on [001] and has a Burgers vector ½a+½b Interpretation of features associated with these dislocations has been assisted by the use of two-dimensional models of I-beam cross-sections which can be interlocked to simulate the possible modes of stacking.

Specimen Preparation of Thin Crystalline Fibers for Transmission Electron Microscopy

1990 ◽  
Vol 199 ◽  
Author(s):  
Rosemarie Koch ◽  
Ann F. Marshall
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Epoxy Resin ◽  
Cross Sections ◽  
Specimen Preparation ◽  
Thin Glass ◽  
Alternative Method ◽  
Transmission Electron ◽  
Short Piece ◽  
Transmission Electron Microscopy Cross

ABSTRACTA technique was developed to prepare crystalline fibers of less than 1 mm diameter for transmission electron microscopy. Cross sections were made by casting a short piece of the fiber in an epoxy resin, sectioning the block, and laminating the slices against thin glass discs for stability before dimpling. Longitudinal sections were reinforced in a similar manner. TEM tungsten rings were sometimes used as an alternative method to add stability to the longitudinal sections. The technique was especially developed for Bi-Sr-Ca-Cu-O compounds but is also suitable for other materials.

Direct Observation of Heat Exchanger Deposits by Cross Sectioning

1967 ◽  
Vol 25 ◽  
pp. 364-365
Author(s):  
R. W. Anderson ◽  
D. L. Senecal
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Heat Exchanger ◽  
Direct Observation ◽  
Cross Sections ◽  
Preparation Method ◽  
Specimen Preparation ◽  
Flowing Water ◽  
Transmission Electron ◽  
Deposit Layer

A problem was presented to observe the packing densities of deposits of sub-micron corrosion product particles. The deposits were 5-100 mils thick and had formed on the inside surfaces of 3/8 inch diameter Zircaloy-2 heat exchanger tubes. The particles were iron oxides deposited from flowing water and consequently were only weakly bonded. Particular care was required during handling to preserve the original formations of the deposits. The specimen preparation method described below allowed direct observation of cross sections of the deposit layers by transmission electron microscopy.The specimens were short sections of the tubes (about 3 inches long) that were carefully cut from the systems. The insides of the tube sections were first coated with a thin layer of a fluid epoxy resin by dipping. This coating served to impregnate the deposit layer as well as to protect the layer if subsequent handling were required.

Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

1986 ◽  
Vol 76 ◽  
Author(s):  
L. Dori ◽  
M. Arienzo ◽  
Y. C. Sun ◽  
T. N. Nguyen ◽  
J. Wetzel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Oxygen Vacancies ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Oxide Charge ◽  
Transmission Electron ◽  
Redistribution Of Hydrogen ◽  
Transmission Electron Microscopy Cross

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

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