scholarly journals Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions

2021 ◽  
Vol 39 (1) ◽  
pp. 012407
Author(s):  
Md. Istiaque Chowdhury ◽  
Mark Sowa ◽  
Alexander C. Kozen ◽  
Brandon A. Krick ◽  
Jewel Haik ◽  
...  

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015218
Author(s):  
Changbong Yeon ◽  
Jaesun Jung ◽  
Hyeran Byun ◽  
Kok Chew Tan ◽  
Taeho Song ◽  
...  




2018 ◽  
Vol 36 (6) ◽  
pp. 06A105 ◽  
Author(s):  
Igor Krylov ◽  
Xianbin Xu ◽  
Ekaterina Zoubenko ◽  
Kamira Weinfeld ◽  
Santiago Boyeras ◽  
...  




2019 ◽  
Vol 55 (88) ◽  
pp. 13283-13286 ◽  
Author(s):  
Junwei Sun ◽  
Xin Wang ◽  
Yanyan Song ◽  
Qianqian Wang ◽  
Yumei Song ◽  
...  

Atomic layer deposition of ultra-trace Pt onto three-dimensional titanium nitride nanowire array was realized, and the obtained catalyst shows a much larger mass current density than commercial Pt/C towards electrocatalytic methanol oxidation.



2018 ◽  
Vol 282 ◽  
pp. 232-237
Author(s):  
Adam Hinckley ◽  
Anthony Muscat

Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2with TiCl4and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.



Author(s):  
Ray Secondo ◽  
Vitaliy Avrutin ◽  
Ümit Özgür ◽  
Nathaniel Kinsey


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